Chen Chen

US Patent:

20220231203, Jul 21, 2022

Filed:

Apr 6, 2022

Appl. No.:

17/714814

Inventors:

- Branford CT, US
Chen Chen - Branford CT, US

Assignee:

Saphlux, Inc. - Branford CT

International Classification:

H01L 33/50
H01L 25/075
H01L 33/46

Abstract:

In accordance with one or more aspects of the present disclosure, a semiconductor device is provided. The semiconductor device may include: a plurality of light-emitting devices comprising a first light-emitting device, a second light-emitting device, and a third light-emitting device, wherein each of the plurality of light-emitting devices comprises a first ohmic contact and a second ohmic contact; and a light-conversion device with embedded quantum dots, wherein a first portion of the light-conversion device includes a first plurality of quantum dots for converting light produced by the first light-emitting device into light of a first color, wherein a second portion of the light-conversion device includes a second plurality of quantum dots for converting light produced by the second light-emitting device into light of a second color, and wherein the third light-emitting device emits light of a third color.

US Patent:

20200295239, Sep 17, 2020

Filed:

Mar 11, 2020

Appl. No.:

16/816136

Inventors:

- Branford CT, US
Joo Won Choi - Branford CT, US
Chen Chen - Branford CT, US

International Classification:

H01L 33/50

Abstract:

Aspects of the disclosure provide for light conversion devices incorporating quantum dots and methods of fabricating the same. In accordance with some embodiments of the present disclosure, a light conversion device is provided. The light conversion device may include. a porous structure comprising one or more nanoporous materials, wherein the one or more nanoporous materials comprise a plurality of pores; and a plurality of quantum dots placed in the porous structure, wherein the plurality of quantum dots comprises a first plurality of quantum dots configured to convert light of a first color into light of a second color, and a second plurality of quantum dots configured to convert the light of the first color into light of a third color. Each of the plurality of pores may have a nanoscale size. The nonporous materials may further include a matrix comprising a semiconductor material, glass, plastic, metal, polymer, etc.

US Patent:

20200194619, Jun 18, 2020

Filed:

Dec 13, 2019

Appl. No.:

16/714210

Inventors:

- Branford CT, US
Jie Song - Branford CT, US
Chen Chen - Branford CT, US

International Classification:

H01L 33/06
H01L 33/00
H01L 33/32

Abstract:

In accordance with some embodiments of the present disclosure, a semiconductor device (e.g., a light-emitting device) is provided. The semiconductor device may include a first epitaxial layer of a first group III-V material, a superlattice layer grown on the first epitaxial layer of the first group III-V material, and a second epitaxial layer of the first group iii-v material grown on the superlattice layer. In some embodiments, the superlattice layer may include the first group III-V material and a second group III-V material. In some embodiments, the first epitaxial layer may include the first group III-V material of a semipolar orientation. The semipolar orientation may include at least one of at least one of a (201) orientation, a (20) orientation, a (301) orientation, or a (30) orientation including off-axis orientations within 4 degrees. The second epitaxial layer may include the first group III-V material of the semipolar orientation.