Chen Chen

US Patent:

20220231203, Jul 21, 2022

Filed:

Apr 6, 2022

Appl. No.:

17/714814

Inventors:

- Branford CT, US
Chen Chen - Branford CT, US

Assignee:

Saphlux, Inc. - Branford CT

International Classification:

H01L 33/50
H01L 25/075
H01L 33/46

Abstract:

In accordance with one or more aspects of the present disclosure, a semiconductor device is provided. The semiconductor device may include: a plurality of light-emitting devices comprising a first light-emitting device, a second light-emitting device, and a third light-emitting device, wherein each of the plurality of light-emitting devices comprises a first ohmic contact and a second ohmic contact; and a light-conversion device with embedded quantum dots, wherein a first portion of the light-conversion device includes a first plurality of quantum dots for converting light produced by the first light-emitting device into light of a first color, wherein a second portion of the light-conversion device includes a second plurality of quantum dots for converting light produced by the second light-emitting device into light of a second color, and wherein the third light-emitting device emits light of a third color.

US Patent:

20200295239, Sep 17, 2020

Filed:

Mar 11, 2020

Appl. No.:

16/816136

Inventors:

- Branford CT, US
Joo Won Choi - Branford CT, US
Chen Chen - Branford CT, US

International Classification:

H01L 33/50

Abstract:

Aspects of the disclosure provide for light conversion devices incorporating quantum dots and methods of fabricating the same. In accordance with some embodiments of the present disclosure, a light conversion device is provided. The light conversion device may include. a porous structure comprising one or more nanoporous materials, wherein the one or more nanoporous materials comprise a plurality of pores; and a plurality of quantum dots placed in the porous structure, wherein the plurality of quantum dots comprises a first plurality of quantum dots configured to convert light of a first color into light of a second color, and a second plurality of quantum dots configured to convert the light of the first color into light of a third color. Each of the plurality of pores may have a nanoscale size. The nonporous materials may further include a matrix comprising a semiconductor material, glass, plastic, metal, polymer, etc.

US Patent:

20200194619, Jun 18, 2020

Filed:

Dec 13, 2019

Appl. No.:

16/714210

Inventors:

- Branford CT, US
Jie Song - Branford CT, US
Chen Chen - Branford CT, US

International Classification:

H01L 33/06
H01L 33/00
H01L 33/32

Abstract:

In accordance with some embodiments of the present disclosure, a semiconductor device (e.g., a light-emitting device) is provided. The semiconductor device may include a first epitaxial layer of a first group III-V material, a superlattice layer grown on the first epitaxial layer of the first group III-V material, and a second epitaxial layer of the first group iii-v material grown on the superlattice layer. In some embodiments, the superlattice layer may include the first group III-V material and a second group III-V material. In some embodiments, the first epitaxial layer may include the first group III-V material of a semipolar orientation. The semipolar orientation may include at least one of at least one of a (201) orientation, a (20) orientation, a (301) orientation, or a (30) orientation including off-axis orientations within 4 degrees. The second epitaxial layer may include the first group III-V material of the semipolar orientation.

US Patent:

20190189843, Jun 20, 2019

Filed:

Dec 15, 2017

Appl. No.:

15/843758

Inventors:

- Branford CT, US
Chen Chen - New Haven CT, US

International Classification:

H01L 33/10
H01L 33/06
H01L 33/00
H01L 33/32

Abstract:

Aspects of the disclosure provide for mechanisms for fabricating light extraction structures for semiconductor devices (e.g., light-emitting devices). In accordance with some embodiments, a semiconductor device is provided. The semiconductor device may include: a first semiconductor layer including an epitaxial layer of a semiconductor material; a second semiconductor layer comprising an active layer; and a light-reflection layer configured to cause at least a portion of light produced by the active layer to emerge from the semiconductor device via a surface of the second semiconductor layer, wherein the light-reflection layer is positioned between the first semiconductor layer and the second semiconductor layer. In some embodiments, the semiconductor material includes gallium nitride. In some embodiments, the light-reflection layer includes a layer of gallium.

US Patent:

20190189849, Jun 20, 2019

Filed:

Dec 15, 2017

Appl. No.:

15/844344

Inventors:

- Branford CT, US
Chen Chen - New Haven CT, US
Jie Song - New Haven CT, US

International Classification:

H01L 33/32
H01L 33/08
C30B 29/40
H01L 33/24
H01L 21/02
H01L 29/20
H01L 27/15

Abstract:

Aspects of the disclosure provide for mechanisms for forming air voids for semiconductor fabrication. In accordance with some embodiments, a method for forming air voids may include forming a first semiconductor layer including a first group III material and a second group III material on a substrate; forming a plurality of air voids in the first semiconductor layer by removing at least a portion of the second group III material from the first semiconductor layer; and forming a second semiconductor layer on the first semiconductor layer. The second semiconductor layer may include an epitaxial layer of a group III-V material. In some embodiments, the first group III material and the second group III material may be gallium and indium, respectively.

US Patent:

20180283106, Oct 4, 2018

Filed:

Sep 21, 2016

Appl. No.:

15/764002

Inventors:

- Houston TX, US
Chen Chen - New Haven CT, US
Yuri Burhan - Spring TX, US
Balasubramanian Durairajan - Sugar Land TX, US
Sandeep Tammineni - Dhahran, SA

International Classification:

E21B 10/56
E21B 10/42

Abstract:

A cutting element includes a cutting end extending a depth from a cutting face to an interface surface opposite from the cutting face, and a spindle, the spindle axially separated from the cutting end by a transition region. The spindle has a spindle diameter measured between a spindle side surface, which is less than a cutting end diameter. A guide length, measured from a point of transition to the transition region to a retention feature, is longer than 75% of a total length of the spindle.

US Patent:

20180274302, Sep 27, 2018

Filed:

Aug 29, 2016

Appl. No.:

15/763345

Inventors:

- Houston TX, US
Chen Chen - New Haven CT, US
Yuri Y. Burhan - Spring TX, US

International Classification:

E21B 10/42
E21B 10/567

Abstract:

A downhole cutting tool includes a tool body defining a cutter pocket and a rolling cutter having an inner rotatable cutting element and a sleeve in the cutter pocket, where axial movement of the inner rotatable cutting element is limited by an external retention element disposed outside of the sleeve.

US Patent:

20150346234, Dec 3, 2015

Filed:

Jun 2, 2015

Appl. No.:

14/727891

Inventors:

- Houston TX, US
Catalin Badea - Calgary, CA
Jaroslav Dobos - Calgary, CA
Barry Buternowsky - Calagary, CA
Mihai Silviu Calin - Calgary, CA
Fuchun Liu - Calagary, CA
Chen Chen - New Haven CT, US

International Classification:

G01P 3/487
E21B 47/12
G01D 5/14

Abstract:

A rotational speed measurement system may include a rotational speed measuring device for measuring a rotational speed of a motor or component thereof. The downhole rotational speed measuring device may include a magnet and a magnetic sensor. A telescoping unit may position the magnetic sensor into sensing proximity of the magnet. A method for measuring downhole rotational speed may include coupling a rotational speed measuring device to a measurement assembly and a motor. The rotational speed measuring device may include a magnet and a magnetic sensor. The position of the magnetic sensor, the magnet, or both, may be adjusted with a telescoping unit to place the magnetic sensor into sensing proximity of the magnet.