Chen J Lin

US Patent:

20210133284, May 6, 2021

Filed:

Oct 31, 2019

Appl. No.:

16/671047

Inventors:

- Armonk NY, US
Chen Lin - Elmsford NY, US
Jin Xiao - White Plains NY, US
Maja Vukovic - New York NY, US

International Classification:

G06F 17/27
G06K 9/00
G06K 9/62
G06N 20/00

Abstract:

One embodiment of the invention provides a method for entity extraction, comprising determining a set of part-of-speech (POS) tags based on one or more documents, determining a concept in the one or more documents based on the set of POS tags, and extracting one or more phrases from the one or more documents based on the concept. The method further comprises generating a first set of rules corresponding to the concept based on the one or more phrases, generating a second set of rules specific to a domain based on the first set of rules, and learning, via an adapter grammar, a structure of one or more named entities in the one or more documents based on the second set of rules.

US Patent:

20190188276, Jun 20, 2019

Filed:

Dec 20, 2017

Appl. No.:

15/848563

Inventors:

- Armonk NY, US
Anup Kalia - Elmsford NY, US
Chen Lin - Raleigh NC, US
Maja Vukovic - New York NY, US
Jin Xiao - Ossining NY, US

International Classification:

G06F 17/30
G06F 9/50
G06F 17/27
G06K 9/62

Abstract:

Techniques for generating domain and client-specific application program interface recommendations are provided. In one example, a computer-implemented method comprises determining a semantic similarity between a first client application program interface and a second client application program interface based on a modified client application program interface being generated by removing text data associated with a first description of the first client application program interface. The computer-implemented method can further comprise matching the first description to a second description of the second client application program interface based on the semantic similarity, resulting in on or more matched client application program interfaces. Additionally, the computer-implemented method can further comprise associating the first client application program interface with a community based on the one or more matched client application program interfaces.

US Patent:

20190188319, Jun 20, 2019

Filed:

Dec 20, 2017

Appl. No.:

15/848589

Inventors:

- Armonk NY, US
Anup Kalia - Elmsford NY, US
Chen Lin - Raleigh NC, US
Maja Vukovic - New York NY, US
Jin Xiao - Ossining NY, US

International Classification:

G06F 17/30
G06F 17/27
G06K 9/62

Abstract:

Techniques for generating domain and client-specific application program interface recommendations are provided. In one example, a computer-implemented method comprises modifying, by a device operatively coupled to a processor, a description of a client application program interface by removing text data associated with the description of the client application program interface, resulting in a modified description of the client application program interface. The computer-implemented method can further comprise analyzing, by the device, a performance associated with the client application program interface to generate an ontology based on a semantic similarity between the modified description of the client application program interface and one or more previous descriptions of one or more previous client application program interfaces.

US Patent:

20190070824, Mar 7, 2019

Filed:

Aug 15, 2018

Appl. No.:

15/998451

Inventors:

- Philadelphia PA, US
Chen Lin - Philadelphia PA, US
Samuel Nicaise - Philadelphia PA, US

Assignee:

The Trustees of the University of Pennsylvania - Philadelphia PA

International Classification:

B32B 3/12
B32B 3/26

Abstract:

The presently disclosed subject matter relates to nanocardboard structures and methods of fabrication thereof. An exemplary nanocardboard structure includes at least two parallel planar films and webbing. The planar films can be separated from each other by a gap of from about 0.1 micrometers to about 1000 micrometers.

US Patent:

20190057863, Feb 21, 2019

Filed:

Aug 17, 2018

Appl. No.:

16/104352

Inventors:

- Santa Clara CA, US
PAUL F. MA - Santa Clara CA, US
WEI V. TANG - Santa Clara CA, US
WENYU ZHANG - San Jose CA, US
SHIH CHUNG CHEN - Cupertino CA, US
CHEN HAN LIN - Campbell CA, US
CHI-CHOU LIN - San Jose CA, US
YI XU - San Jose CA, US
YU LEI - Foster City CA, US
NAOMI YOSHIDA - Sunnyvale CA, US
LIN DONG - San Jose CA, US
SIDDARTH KRISHNAN - Newark CA, US

International Classification:

H01L 21/02
H01L 29/40
H01L 21/28

Abstract:

Methods and apparatus for forming a semiconductor structure, including depositing a doping stack having a first surface atop a high-k dielectric layer, wherein the doping stack includes at least one first metal layer having a first surface, at least one second metal layer comprising a first aluminum dopant and a first surface, wherein the second metal layer is atop the first surface of the first metal layer, and at least one third metal layer atop the first surface of the second metal layer; depositing an anneal layer atop the first surface of the doping stack; annealing the structure to diffuse at least the first aluminum dopant into the high-k dielectric layer; removing the anneal layer; and depositing at least one work function layer atop the first surface of the doping stack.

US Patent:

20190027347, Jan 24, 2019

Filed:

Jul 24, 2018

Appl. No.:

16/044215

Inventors:

- Berkeley CA, US
Igor Bargatin - Berkeley CA, US
Samuel M. Nicaise - Berkeley CA, US
Chen Lin - Berkeley CA, US
John Provine - Berkeley CA, US

International Classification:

H01J 45/00

Abstract:

A small-gap device system, preferably including two or more electrodes and one or more spacers maintaining a gap between two or more of the electrodes. A spacer for a small-gap device system, preferably including a plurality of legs defining a mesh structure. A method of spacer and/or small-gap device fabrication, preferably including: defining lateral features, depositing spacer material, selectively removing spacer material, separating the spacer from a fabrication substrate, and/or assembling the small-gap device.