Cheng Yang

US Patent:

7846644, Dec 7, 2010

Filed:

Nov 20, 2007

Appl. No.:

11/942780

Inventors:

Lyn M. Irving - Rochester NY, US
David H. Levy - Rochester NY, US
Diane C. Freeman - Pittsford NY, US
Cheng Yang - Pittsford NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

G03F 7/26
G03F 7/075

US Classification:

430313, 4302701

Abstract:

An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a photopatternable deposition inhibitor material to the substrate, wherein the deposition inhibitor material comprises an organosiloxane compound; and patterning the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

US Patent:

7956118, Jun 7, 2011

Filed:

Sep 25, 2008

Appl. No.:

12/237490

Inventors:

Xin Jin - Pittsford NY, US
Cheng Yang - Pittsford NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

C08C 1/14
G03G 5/00

US Classification:

524492, 4301371, 528488, 528491

Abstract:

A method of making polymeric particles having a controlled size and size distribution, and in particular a method for the preparation of chemically prepared toners, via evaporative limited coalescence process, wherein basic silicate salts are employed to remove particulate stabilizer from precipitated polymer particles. The process includes the steps of dispersing polymeric binder materials and optional additives in an organic solvent to form an organic phase. The organic phase is dispersed by high shear agitation in an aqueous phase containing a particulate stabilizer, e. g. colloidal silica, to form a dispersion of small droplets of the organic phase in the aqueous phase. The dispersion is homogenized and the organic solvent is removed from the dispersed particles in the dispersion by evaporation, and polymeric particles are precipitated with particulate stabilizer on the surface thereof, which are then recovered, treated with a basic silicate salt to remove particulate stabilizer, and washed and dried.

US Patent:

8017183, Sep 13, 2011

Filed:

Sep 26, 2007

Appl. No.:

11/861705

Inventors:

Cheng Yang - Pittsford NY, US
Lyn M. Irving - Rochester NY, US
David H. Levy - Rochester NY, US
Diane C. Freeman - Pittsford NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

C23C 16/00

US Classification:

4272481, 427 984

Abstract:

An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organosiloxane compound; and patterning the deposition inhibitor material either after or simultaneously with or introducing applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

US Patent:

8030212, Oct 4, 2011

Filed:

Sep 26, 2007

Appl. No.:

11/861658

Inventors:

Cheng Yang - Pittsford NY, US
Lyn M. Irving - Rochester NY, US
David H. Levy - Rochester NY, US
Diane C. Freeman - Pittsford NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

H01L 21/44

US Classification:

438680, 438765, 257E21586

Abstract:

An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organic compound or polymer; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. An inorganic thin film material is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

US Patent:

8129098, Mar 6, 2012

Filed:

Nov 20, 2007

Appl. No.:

11/986169

Inventors:

Lyn M. Irving - Rochester NY, US
Diane C. Freeman - Pittsford NY, US
Cheng Yang - Pittsford NY, US
David H. Levy - Rochester NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

G03F 7/20

US Classification:

430324, 430396

Abstract:

The invention relates to a process for forming a structure comprising (a) providing a transparent support; (b) forming a color mask on a first side of the transparent support; (c) applying a first layer comprising a deposition inhibitor material that is sensitive to visible light; (d) patterning the first layer by exposing the first layer through the color mask with visible light to form a first pattern and developing the deposition inhibitor material to provide selected areas of the first layer effectively not having the deposition inhibitor material; and (e) depositing a second layer of functional material over the transparent support; wherein the second layer of functional material is substantially deposited only in selected areas over the transparent support not having the deposition inhibitor material.