Chinh T Dinh

US Patent:

20100188077, Jul 29, 2010

Filed:

Jan 27, 2009

Appl. No.:

12/360664

Inventors:

KARTIK RAMASWAMY - San Jose CA, US
HIROJI HANAWA - Sunnyvale CA, US
LAWRENCE WONG - Fremont CA, US
CHINH DINH - San Jose CA, US

Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA

International Classification:

G01R 33/02

US Classification:

324244

Abstract:

Embodiments of sensor devices for characterizing magnetic fields formed in substrate processing systems and methods of use thereof are provided herein. In some embodiments, an apparatus for characterizing a magnetic field in a substrate processing system may include a carrier having a form substantially similar to a substrate to be processed in the substrate processing system. One or more magnetic sensors are disposed on the carrier for measuring a magnitude of a magnetic field formed in the processing system in an x-, y-, and z-direction. A microprocessor is coupled to the one or more magnetic sensors to sample data representative of the magnitude of the magnetic field in the x-, y-, and z-directions proximate a position of each sensor. A memory device is coupled to the microprocessor for storing the sampled data. A power source is provided to supply power to each magnetic sensor and the microprocessor.

US Patent:

20150262834, Sep 17, 2015

Filed:

Mar 9, 2015

Appl. No.:

14/642340

Inventors:

- Santa Clara CA, US
Chinh DINH - San Jose CA, US
Qingjun ZHOU - San Jose CA, US
Srinivas D. NEMANI - Sunnyvale CA, US
Andrew NGUYEN - San Jose CA, US

International Classification:

H01L 21/311
H01L 21/02
H01L 21/263

Abstract:

A method for etching a dielectric layer disposed on a substrate is provided. The method includes de-chucking the substrate from an electrostatic chuck in an etching processing chamber, and cyclically etching the dielectric layer while the substrate is de-chucked from the electrostatic chuck. The cyclical etching includes remotely generating a plasma in an etching gas mixture supplied into the etching processing chamber to etch the dielectric layer disposed on the substrate at a first temperature. Etching the dielectric layer generates etch byproducts. The cyclical etching also includes vertically moving the substrate towards a gas distribution plate in the etching processing chamber, and flowing a sublimation gas from the gas distribution plate towards the substrate to sublimate the etch byproducts. The sublimation is performed at a second temperature, wherein the second temperature is greater than the first temperature.

US Patent:

20140375299, Dec 25, 2014

Filed:

May 20, 2014

Appl. No.:

14/283159

Inventors:

Sergey G. Belostotskiy - Santa Clara CA, US
Chinh Dinh - San Jose CA, US
Andrew Nguyen - San Jose CA, US
Michael G. Chafin - Santa Clara CA, US

International Classification:

G01R 19/00
H01L 21/683

US Classification:

324 72

Abstract:

A direct (DC) voltage is applied to an electrode at a voltage value to clamp a workpiece to an electrostatic chuck in a processing chamber. The electrode is embedded into the electrostatic chuck. An electrostatic chuck current through the electrode at the DC voltage is measured. A DC self bias induced on the workpiece by a plasma is determined based on the electrostatic chuck current and the applied voltage.