Payquicker
Senior Frontend Developer
Aci Worldwide Jul 1, 2007 - Nov 14, 2016
Senior Software Engineer
Wrs Health Jan 2005 - Jun 2007
Senior Interface Developer
Ibix Corp Jan 2002 - Dec 2004
Software Engineer
Emagine Solutions Inc Jun 1, 2000 - Dec 1, 2001
Software Engineer and Webmaster
Education:
Stevens Institute of Technology 1996 - 2000
Bachelors, Bachelor of Science, Computer Science
Skills:
Agile Methodologies Software Development Javascript Java Sql Xml Web Development Ajax Jquery Web Design Junit Spring Framework Html5 Javaserver Pages C# Bootstrap Jaws User Interface Design Web Services Freemarker Node.js Responsive Web Design C++ Css3 Asp.net Ext Js Webobjects Objective C Javaserver Faces Cross Browser Compatibility Web Content Accessibility Guidelines Active Server Pages Paintshop Pro Document Object Model Cassandra Object Oriented Programming Javacc Wai Aria Angularjs Nosql Cgi/Perl Struts Requirejs
Languages:
English Mandarin
Us Patents
Tungsten Cmp With Improved Alignment Mark Integrity, Reduced Edge Residue, And Reduced Retainer Ring Notching
Robert T. Lum - Sunnyvale CA David W. Groechel - Sunnyvale CA Li Wu - Fremont CA Chiu Chan - Foster City CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
B24B 100
US Classification:
451 41, 451286, 438692
Abstract:
Tungsten CMP is conducted with improved alignment mark integrity and reduced edge residue by employing a retaining ring having a mechanical hardness greater than about 85 durometer and a relatively soft polishing pad. Embodiments of the present invention include conducting CMP employing a carrier comprising a retaining ring additionally having a wear rate during CMP of less than about 1 mil per hour and a polishing pad having a hardness less than about 60 durometer. Suitable retaining ring materials include ceramics, quartz, polymers and fiber reinforced polymers.
System And Method For Chemical Mechanical Planarization
Li Wu - Fremont CA, US Sourabh Mishra - Campbell CA, US Young J. Paik - Campbell CA, US Satyasrayan Kumaraswamy - Sunnyvale CA, US Robert Lum - Sunnyvale CA, US Chiu Chan - Foster City CA, US David Groechel - Sunnyvale CA, US
Assignee:
Applied Materials - Santa Clara CA
International Classification:
B24B 7/22 B24B 49/00
US Classification:
451 5, 451 57
Abstract:
Generally, a method and apparatus for processing a substrate. In one embodiment, the method provides a first relative motion between at least a first substrate and a polishing material. A second relative motion is provided between at least a second substrate and the polishing material. The changing in direction of the relative motion extends the interval between conditioning procedures used to return the polishing material to a state that produces uniform polishing results.
Methods To Improve The In-Film Defectivity Of Pecvd Amorphous Carbon Films
Deenesh Padhi - Sunnyvale CA, US Chiu Chan - Foster City CA, US Sudha Rathi - San Jose CA, US Ganesh Balasubramanian - Sunnyvale CA, US Jianhua Zhou - San Jose CA, US Karthik Janakiraman - San Jose CA, US Martin J. Seamons - San Jose CA, US Visweswaren Sivaramakrishnan - Cupertino CA, US Derek R. Witty - Fremont CA, US Hichem M'Saad - Santa Clara CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H05H 1/24
US Classification:
427569, 427577, 4272497
Abstract:
Methods of making an article having a protective coating for use in semiconductor applications are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.
Method For Depositing An Amorphous Carbon Film With Improved Density And Step Coverage
Deenesh Padhi - Sunnyvale CA, US Sudha Rathi - San Jose CA, US Derek R. Witty - Fremont CA, US Chiu Chan - Foster City CA, US Sohyun Park - Santa Clara CA, US Ganesh Balasubramanian - Sunnyvale CA, US Karthik Janakiraman - San Jose CA, US Martin Jay Seamons - San Jose CA, US Visweswaren Sivaramakrishnan - Cupertino CA, US Bok Hoen Kim - San Jose CA, US Hichem M'Saad - Santa Clara CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H05H 1/24
US Classification:
427569, 427331
Abstract:
A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.
Systems For Plasma Enhanced Chemical Vapor Deposition And Bevel Edge Etching
Ashish Shah - Santa Clara CA, US Dale R. DuBois - Los Gatos CA, US Ganesh Balasubramanian - Sunnyvale CA, US Mark A. Fodor - Redwood City CA, US Eui Kyoon Kim - Campbell CA, US Chiu Chan - Foster City CA, US Karthik Janakiraman - San Jose CA, US Thomas Nowak - Cupertino CA, US Joseph C. Werner - Santa Clara CA, US Visweswaren Sivaramakrishnan - Cupertino CA, US Mohamad Ayoub - San Jose CA, US Amir Al-Bayati - San Jose CA, US Jianhua Zhou - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23F 1/00 C23C 16/00 H01L 21/306
US Classification:
15634532, 15634531, 15634533, 15634534, 15634543, 118719, 118723 E
Abstract:
Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.
Methods To Improve The In-Film Defectivity Of Pecvd Amorphous Carbon Films
Deenesh Padhi - Sunnyvale CA, US Chiu Chan - Foster City CA, US Sudha Rathi - San Jose CA, US Ganesh Balasubramanian - Sunnyvale CA, US Jianhua Zhou - San Jose CA, US Karthik Janakiraman - San Jose CA, US Martin J. Seamons - San Jose CA, US Visweswaren Sivaramakrishnan - Cupertino CA, US Derek R. Witty - Fremont CA, US Hichem M'Saad - Santa Clara CA, US
An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.
Kwangduk Douglas Lee - Redwood City CA, US Martin Jay Seamons - San Jose CA, US Sudha Rathi - San Jose CA, US Chiu Chan - Foster City CA, US Michael H. Lin - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/302
US Classification:
438725, 438714, 438717, 430313
Abstract:
A method of forming an amorphous carbon layer on a substrate in a substrate processing chamber, includes introducing a hydrocarbon source into the processing chamber, introducing argon, alone or in combination with helium, hydrogen, nitrogen, and combinations thereof, into the processing chamber, wherein the argon has a volumetric flow rate to hydrocarbon source volumetric flow rate ratio of about 10:1 to about 20:1, generating a plasma in the processing chamber at a substantially lower pressure of about 2 Torr to 10 Torr, and forming a conformal amorphous carbon layer on the substrate.
CHIU CHAN - FOSTER CITY CA, US FARHAD K. MOGHADAM - LOS GATOS CA, US
International Classification:
H01L023/48 H01L023/52 H01L029/40
US Classification:
257/758000
Abstract:
The present invention provides a method for forming a barrier film on a substrate by depositing a first dielectric film, such as a tetra-ethyl-ortho-silicate (TEOS) film, on a substrate and depositing a silicon nitride film over the dielectric film. Preferably, the method further comprises depositing a silicate glass film over the barrier film. The present invention further provides a semiconductor device comprising: a polysilicon substrate; a dielectric film deposited over the polysilicon substrate; a silicon nitride film deposited over the dielectric film; a silicate glass film deposited over the silicon nitride film; and a metal film deposited selectively over the silicate glass film.
Name / Title
Company / Classification
Phones & Addresses
Chiu Chan Chairman
Onus Consulting Company Computer Programming Services
29 Ash Avenue, Somerville, MA 02144
Chiu Ki Chan
Square Island LLC Software · Prepackaged Software Services
1222 Valerian Ct, Sunnyvale, CA 94086 444 Castro St, Mountain View, CA 94041
Chiu Kwan Chan
Carina International LLC
25061 Viking St, Hayward, CA 94545
Chiu Kwan Chan President
PINTA INTERNATIONAL, INC Import/Distribution · Whol Plastic Materials/Shapes