Chiu Nung Chan

age ~72

from San Ramon, CA

Also known as:
  • Chiu N Chan
  • Chiu Wai Chan
  • Chiu Wai Fun Chan
  • Nung Chan Chiu
  • Chin Nung Chan
  • Chou Nung Chan
  • Chin N Chan
  • Chiu Nungchan
  • Chan Cn
Phone and address:
160 Maidenhair Ct, San Ramon, CA 94582
9253015723

Chiu Chan Phones & Addresses

  • 160 Maidenhair Ct, San Ramon, CA 94582 • 9253015723
  • Wilton, ME
  • Newport, ME
  • Farmington, ME
  • Randolph, MA
  • 605 Wilton Rd, Farmington, ME 04938

Emails

Resumes

Chiu Chan Photo 1

Senior Frontend Developer

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Location:
2218 east 22Nd St, Brooklyn, NY 11229
Industry:
Computer Software
Work:
Payquicker
Senior Frontend Developer

Aci Worldwide Jul 1, 2007 - Nov 14, 2016
Senior Software Engineer

Wrs Health Jan 2005 - Jun 2007
Senior Interface Developer

Ibix Corp Jan 2002 - Dec 2004
Software Engineer

Emagine Solutions Inc Jun 1, 2000 - Dec 1, 2001
Software Engineer and Webmaster
Education:
Stevens Institute of Technology 1996 - 2000
Bachelors, Bachelor of Science, Computer Science
Skills:
Agile Methodologies
Software Development
Javascript
Java
Sql
Xml
Web Development
Ajax
Jquery
Web Design
Junit
Spring Framework
Html5
Javaserver Pages
C#
Bootstrap
Jaws
User Interface Design
Web Services
Freemarker
Node.js
Responsive Web Design
C++
Css3
Asp.net
Ext Js
Webobjects
Objective C
Javaserver Faces
Cross Browser Compatibility
Web Content Accessibility Guidelines
Active Server Pages
Paintshop Pro
Document Object Model
Cassandra
Object Oriented Programming
Javacc
Wai Aria
Angularjs
Nosql
Cgi/Perl
Struts
Requirejs
Languages:
English
Mandarin

Us Patents

  • Tungsten Cmp With Improved Alignment Mark Integrity, Reduced Edge Residue, And Reduced Retainer Ring Notching

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  • US Patent:
    6468136, Oct 22, 2002
  • Filed:
    Jun 30, 2000
  • Appl. No.:
    09/606666
  • Inventors:
    Robert T. Lum - Sunnyvale CA
    David W. Groechel - Sunnyvale CA
    Li Wu - Fremont CA
    Chiu Chan - Foster City CA
  • Assignee:
    Applied Materials, Inc. - Santa Clara CA
  • International Classification:
    B24B 100
  • US Classification:
    451 41, 451286, 438692
  • Abstract:
    Tungsten CMP is conducted with improved alignment mark integrity and reduced edge residue by employing a retaining ring having a mechanical hardness greater than about 85 durometer and a relatively soft polishing pad. Embodiments of the present invention include conducting CMP employing a carrier comprising a retaining ring additionally having a wear rate during CMP of less than about 1 mil per hour and a polishing pad having a hardness less than about 60 durometer. Suitable retaining ring materials include ceramics, quartz, polymers and fiber reinforced polymers.
  • System And Method For Chemical Mechanical Planarization

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  • US Patent:
    7048607, May 23, 2006
  • Filed:
    May 31, 2000
  • Appl. No.:
    09/583512
  • Inventors:
    Li Wu - Fremont CA, US
    Sourabh Mishra - Campbell CA, US
    Young J. Paik - Campbell CA, US
    Satyasrayan Kumaraswamy - Sunnyvale CA, US
    Robert Lum - Sunnyvale CA, US
    Chiu Chan - Foster City CA, US
    David Groechel - Sunnyvale CA, US
  • Assignee:
    Applied Materials - Santa Clara CA
  • International Classification:
    B24B 7/22
    B24B 49/00
  • US Classification:
    451 5, 451 57
  • Abstract:
    Generally, a method and apparatus for processing a substrate. In one embodiment, the method provides a first relative motion between at least a first substrate and a polishing material. A second relative motion is provided between at least a second substrate and the polishing material. The changing in direction of the relative motion extends the interval between conditioning procedures used to return the polishing material to a state that produces uniform polishing results.
  • Methods To Improve The In-Film Defectivity Of Pecvd Amorphous Carbon Films

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  • US Patent:
    7514125, Apr 7, 2009
  • Filed:
    Feb 28, 2007
  • Appl. No.:
    11/680278
  • Inventors:
    Deenesh Padhi - Sunnyvale CA, US
    Chiu Chan - Foster City CA, US
    Sudha Rathi - San Jose CA, US
    Ganesh Balasubramanian - Sunnyvale CA, US
    Jianhua Zhou - San Jose CA, US
    Karthik Janakiraman - San Jose CA, US
    Martin J. Seamons - San Jose CA, US
    Visweswaren Sivaramakrishnan - Cupertino CA, US
    Derek R. Witty - Fremont CA, US
    Hichem M'Saad - Santa Clara CA, US
  • Assignee:
    Applied Materials, Inc. - Santa Clara CA
  • International Classification:
    H05H 1/24
  • US Classification:
    427569, 427577, 4272497
  • Abstract:
    Methods of making an article having a protective coating for use in semiconductor applications are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.
  • Method For Depositing An Amorphous Carbon Film With Improved Density And Step Coverage

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  • US Patent:
    7867578, Jan 11, 2011
  • Filed:
    Jun 28, 2006
  • Appl. No.:
    11/427324
  • Inventors:
    Deenesh Padhi - Sunnyvale CA, US
    Sudha Rathi - San Jose CA, US
    Derek R. Witty - Fremont CA, US
    Chiu Chan - Foster City CA, US
    Sohyun Park - Santa Clara CA, US
    Ganesh Balasubramanian - Sunnyvale CA, US
    Karthik Janakiraman - San Jose CA, US
    Martin Jay Seamons - San Jose CA, US
    Visweswaren Sivaramakrishnan - Cupertino CA, US
    Bok Hoen Kim - San Jose CA, US
    Hichem M'Saad - Santa Clara CA, US
  • Assignee:
    Applied Materials, Inc. - Santa Clara CA
  • International Classification:
    H05H 1/24
  • US Classification:
    427569, 427331
  • Abstract:
    A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.
  • Systems For Plasma Enhanced Chemical Vapor Deposition And Bevel Edge Etching

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  • US Patent:
    8197636, Jun 12, 2012
  • Filed:
    Apr 21, 2008
  • Appl. No.:
    12/106881
  • Inventors:
    Ashish Shah - Santa Clara CA, US
    Dale R. DuBois - Los Gatos CA, US
    Ganesh Balasubramanian - Sunnyvale CA, US
    Mark A. Fodor - Redwood City CA, US
    Eui Kyoon Kim - Campbell CA, US
    Chiu Chan - Foster City CA, US
    Karthik Janakiraman - San Jose CA, US
    Thomas Nowak - Cupertino CA, US
    Joseph C. Werner - Santa Clara CA, US
    Visweswaren Sivaramakrishnan - Cupertino CA, US
    Mohamad Ayoub - San Jose CA, US
    Amir Al-Bayati - San Jose CA, US
    Jianhua Zhou - San Jose CA, US
  • Assignee:
    Applied Materials, Inc. - Santa Clara CA
  • International Classification:
    C23F 1/00
    C23C 16/00
    H01L 21/306
  • US Classification:
    15634532, 15634531, 15634533, 15634534, 15634543, 118719, 118723 E
  • Abstract:
    Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.
  • Methods To Improve The In-Film Defectivity Of Pecvd Amorphous Carbon Films

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  • US Patent:
    8282734, Oct 9, 2012
  • Filed:
    Oct 21, 2008
  • Appl. No.:
    12/255638
  • Inventors:
    Deenesh Padhi - Sunnyvale CA, US
    Chiu Chan - Foster City CA, US
    Sudha Rathi - San Jose CA, US
    Ganesh Balasubramanian - Sunnyvale CA, US
    Jianhua Zhou - San Jose CA, US
    Karthik Janakiraman - San Jose CA, US
    Martin J. Seamons - San Jose CA, US
    Visweswaren Sivaramakrishnan - Cupertino CA, US
    Derek R. Witty - Fremont CA, US
    Hichem M'Saad - Santa Clara CA, US
  • Assignee:
    Applied Materials, Inc. - Santa Clara CA
  • International Classification:
    C23C 16/455
    C23C 16/30
    C23C 16/34
    C23C 16/32
    B05C 11/00
    C23F 1/00
    H01L 21/306
    C23C 16/06
    C23C 16/22
  • US Classification:
    118715, 118 45, 15634534
  • Abstract:
    An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.
  • Ultra High Selectivity Ashable Hard Mask Film

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  • US Patent:
    8361906, Jan 29, 2013
  • Filed:
    May 20, 2010
  • Appl. No.:
    12/784341
  • Inventors:
    Kwangduk Douglas Lee - Redwood City CA, US
    Martin Jay Seamons - San Jose CA, US
    Sudha Rathi - San Jose CA, US
    Chiu Chan - Foster City CA, US
    Michael H. Lin - San Jose CA, US
  • Assignee:
    Applied Materials, Inc. - Santa Clara CA
  • International Classification:
    H01L 21/302
  • US Classification:
    438725, 438714, 438717, 430313
  • Abstract:
    A method of forming an amorphous carbon layer on a substrate in a substrate processing chamber, includes introducing a hydrocarbon source into the processing chamber, introducing argon, alone or in combination with helium, hydrogen, nitrogen, and combinations thereof, into the processing chamber, wherein the argon has a volumetric flow rate to hydrocarbon source volumetric flow rate ratio of about 10:1 to about 20:1, generating a plasma in the processing chamber at a substantially lower pressure of about 2 Torr to 10 Torr, and forming a conformal amorphous carbon layer on the substrate.
  • Silicon Nitride Composite Hdp/Cvd Process

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  • US Patent:
    20020000664, Jan 3, 2002
  • Filed:
    Feb 5, 1999
  • Appl. No.:
    09/245438
  • Inventors:
    CHIU CHAN - FOSTER CITY CA, US
    FARHAD K. MOGHADAM - LOS GATOS CA, US
  • International Classification:
    H01L023/48
    H01L023/52
    H01L029/40
  • US Classification:
    257/758000
  • Abstract:
    The present invention provides a method for forming a barrier film on a substrate by depositing a first dielectric film, such as a tetra-ethyl-ortho-silicate (TEOS) film, on a substrate and depositing a silicon nitride film over the dielectric film. Preferably, the method further comprises depositing a silicate glass film over the barrier film. The present invention further provides a semiconductor device comprising: a polysilicon substrate; a dielectric film deposited over the polysilicon substrate; a silicon nitride film deposited over the dielectric film; a silicate glass film deposited over the silicon nitride film; and a metal film deposited selectively over the silicate glass film.
Name / Title
Company / Classification
Phones & Addresses
Chiu Chan
Chairman
Onus Consulting Company
Computer Programming Services
29 Ash Avenue, Somerville, MA 02144
Chiu Ki Chan
Square Island LLC
Software · Prepackaged Software Services
1222 Valerian Ct, Sunnyvale, CA 94086
444 Castro St, Mountain View, CA 94041
Chiu Kwan Chan
Carina International LLC
25061 Viking St, Hayward, CA 94545
Chiu Kwan Chan
President
PINTA INTERNATIONAL, INC
Import/Distribution · Whol Plastic Materials/Shapes
25063 Viking St, Hayward, CA 94545
5108875865
Chiu Ying Chan
President
GREENLAND ENERGY (USA), INC
1900 Wyatt Dr STE 3, Santa Clara, CA 95054
Chiu Ngo Chan
President
CHINESE SUPERMARKET INC
PO Box 29613, Oakland, CA 94604
Chiu Chan
President
USA PALATIAL (INT'L) SPORT GOODS LIMITED
Chiu Chan
Managing
Atwants LLC
Internet
102 Poas Cir, San Jose, CA 95116

Googleplus

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Myspace

Chiu Chan Photo 10

Chiu Chan

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Locality:
, China
Gender:
Male
Birthday:
1944
Chiu Chan Photo 11

Chiu Chan

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Locality:
Germany
Gender:
Female
Chiu Chan Photo 12

Chiu Chan

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Locality:
hong kong,
Gender:
Male
Birthday:
1945
Chiu Chan Photo 13

Chiu Chan

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Locality:
Taiwan
Gender:
Male
Birthday:
1945

Youtube

Chiu Chan [by ]

Chiu Chan / Qiu Chan was originally composed and sung by Liu Jia Chang...

  • Duration:
    2m 17s

Chan Chun Sing Kee Chiu: 100 years & beyond f...

Source: .

  • Duration:
    1m 27s

jiuchan - Ost White Snake Legend - Terjemahan

  • Duration:
    3m 51s

Why You Need Chinese Medicine to Transform Yo...

Andy has a genuine passion for making a positive impact in the fitness...

  • Duration:
    52m 7s

Chiu-Chan Wedding Dance Medley - Full, Side V...

Our wedding medley from the side.

  • Duration:
    4m 8s

Chiu-Chan Wedding Dance Medley - Thriller, So...

Our wedding dance with the whole wedding party.

  • Duration:
    3m 53s

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