Chiu Ki Chan

US Patent:

6468136, Oct 22, 2002

Filed:

Jun 30, 2000

Appl. No.:

09/606666

Inventors:

Robert T. Lum - Sunnyvale CA
David W. Groechel - Sunnyvale CA
Li Wu - Fremont CA
Chiu Chan - Foster City CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B24B 100

US Classification:

451 41, 451286, 438692

Abstract:

Tungsten CMP is conducted with improved alignment mark integrity and reduced edge residue by employing a retaining ring having a mechanical hardness greater than about 85 durometer and a relatively soft polishing pad. Embodiments of the present invention include conducting CMP employing a carrier comprising a retaining ring additionally having a wear rate during CMP of less than about 1 mil per hour and a polishing pad having a hardness less than about 60 durometer. Suitable retaining ring materials include ceramics, quartz, polymers and fiber reinforced polymers.

US Patent:

7048607, May 23, 2006

Filed:

May 31, 2000

Appl. No.:

09/583512

Inventors:

Li Wu - Fremont CA, US
Sourabh Mishra - Campbell CA, US
Young J. Paik - Campbell CA, US
Satyasrayan Kumaraswamy - Sunnyvale CA, US
Robert Lum - Sunnyvale CA, US
Chiu Chan - Foster City CA, US
David Groechel - Sunnyvale CA, US

Assignee:

Applied Materials - Santa Clara CA

International Classification:

B24B 7/22
B24B 49/00

US Classification:

451 5, 451 57

Abstract:

Generally, a method and apparatus for processing a substrate. In one embodiment, the method provides a first relative motion between at least a first substrate and a polishing material. A second relative motion is provided between at least a second substrate and the polishing material. The changing in direction of the relative motion extends the interval between conditioning procedures used to return the polishing material to a state that produces uniform polishing results.

US Patent:

7514125, Apr 7, 2009

Filed:

Feb 28, 2007

Appl. No.:

11/680278

Inventors:

Deenesh Padhi - Sunnyvale CA, US
Chiu Chan - Foster City CA, US
Sudha Rathi - San Jose CA, US
Ganesh Balasubramanian - Sunnyvale CA, US
Jianhua Zhou - San Jose CA, US
Karthik Janakiraman - San Jose CA, US
Martin J. Seamons - San Jose CA, US
Visweswaren Sivaramakrishnan - Cupertino CA, US
Derek R. Witty - Fremont CA, US
Hichem M'Saad - Santa Clara CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H05H 1/24

US Classification:

427569, 427577, 4272497

Abstract:

Methods of making an article having a protective coating for use in semiconductor applications are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.

US Patent:

7867578, Jan 11, 2011

Filed:

Jun 28, 2006

Appl. No.:

11/427324

Inventors:

Deenesh Padhi - Sunnyvale CA, US
Sudha Rathi - San Jose CA, US
Derek R. Witty - Fremont CA, US
Chiu Chan - Foster City CA, US
Sohyun Park - Santa Clara CA, US
Ganesh Balasubramanian - Sunnyvale CA, US
Karthik Janakiraman - San Jose CA, US
Martin Jay Seamons - San Jose CA, US
Visweswaren Sivaramakrishnan - Cupertino CA, US
Bok Hoen Kim - San Jose CA, US
Hichem M'Saad - Santa Clara CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H05H 1/24

US Classification:

427569, 427331

Abstract:

A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

US Patent:

7922440, Apr 12, 2011

Filed:

Jul 11, 2008

Appl. No.:

12/171594

Inventors:

Dale R. Du Bois - Los Gatos CA, US
Ganesh Balasubramanian - Sunnyvale CA, US
Mark A. Fodor - Los Gatos CA, US
Chiu Chan - Foster City CA, US
Karthik Janakiraman - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B21B 39/22
B65G 47/22

US Classification:

414754, 414780, 414936, 901 48, 269 58, 269254 R

Abstract:

The present invention comprises an apparatus and method for centering a substrate in a process chamber. In one embodiment, the apparatus comprises a substrate support having a support surface adapted to receive the placement of a substrate and a reference axis substantially perpendicular to the support surface, and a plurality of centering members extending above the support surface. Each centering member is biased into a first position and is movable to a second position by interacting with an opposing member. A movement between the first position and the second position thereby causes each centering member to releasably engage with a peripheral edge of the substrate to push the substrate in a direction toward the reference axis.

US Patent:

8197636, Jun 12, 2012

Filed:

Apr 21, 2008

Appl. No.:

12/106881

Inventors:

Ashish Shah - Santa Clara CA, US
Dale R. DuBois - Los Gatos CA, US
Ganesh Balasubramanian - Sunnyvale CA, US
Mark A. Fodor - Redwood City CA, US
Eui Kyoon Kim - Campbell CA, US
Chiu Chan - Foster City CA, US
Karthik Janakiraman - San Jose CA, US
Thomas Nowak - Cupertino CA, US
Joseph C. Werner - Santa Clara CA, US
Visweswaren Sivaramakrishnan - Cupertino CA, US
Mohamad Ayoub - San Jose CA, US
Amir Al-Bayati - San Jose CA, US
Jianhua Zhou - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23F 1/00
C23C 16/00
H01L 21/306

US Classification:

15634532, 15634531, 15634533, 15634534, 15634543, 118719, 118723 E

Abstract:

Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.

US Patent:

8282734, Oct 9, 2012

Filed:

Oct 21, 2008

Appl. No.:

12/255638

Inventors:

Deenesh Padhi - Sunnyvale CA, US
Chiu Chan - Foster City CA, US
Sudha Rathi - San Jose CA, US
Ganesh Balasubramanian - Sunnyvale CA, US
Jianhua Zhou - San Jose CA, US
Karthik Janakiraman - San Jose CA, US
Martin J. Seamons - San Jose CA, US
Visweswaren Sivaramakrishnan - Cupertino CA, US
Derek R. Witty - Fremont CA, US
Hichem M'Saad - Santa Clara CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/455
C23C 16/30
C23C 16/34
C23C 16/32
B05C 11/00
C23F 1/00
H01L 21/306
C23C 16/06
C23C 16/22

US Classification:

118715, 118 45, 15634534

Abstract:

An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.

US Patent:

8361906, Jan 29, 2013

Filed:

May 20, 2010

Appl. No.:

12/784341

Inventors:

Kwangduk Douglas Lee - Redwood City CA, US
Martin Jay Seamons - San Jose CA, US
Sudha Rathi - San Jose CA, US
Chiu Chan - Foster City CA, US
Michael H. Lin - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/302

US Classification:

438725, 438714, 438717, 430313

Abstract:

A method of forming an amorphous carbon layer on a substrate in a substrate processing chamber, includes introducing a hydrocarbon source into the processing chamber, introducing argon, alone or in combination with helium, hydrogen, nitrogen, and combinations thereof, into the processing chamber, wherein the argon has a volumetric flow rate to hydrocarbon source volumetric flow rate ratio of about 10:1 to about 20:1, generating a plasma in the processing chamber at a substantially lower pressure of about 2 Torr to 10 Torr, and forming a conformal amorphous carbon layer on the substrate.