Christine M Norris

US Patent:

20080079037, Apr 3, 2008

Filed:

Oct 3, 2006

Appl. No.:

11/538174

Inventors:

Huilong Zhu - Poughkeepsie NY, US
Ravikumar Ramachandran - Pleasantville NY, US
Effendi Leobandung - Wappingers Falls NY, US
Mahender Kumar - Fishkill NY, US
Wenjuan Zhu - Fishkill NY, US
Christine Norris - Stamford CT, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

H01L 29/76
H01L 21/336

US Classification:

257288, 257401, 438284, 257E2912

Abstract:

A semiconductor structure includes a semiconductor layer that includes an inverted V shaped channel region that allows avoidance of a raised source/drain region within the semiconductor structure. In one embodiment, a generally conventional gate electrode is located over a planar surface of the semiconductor layer over the inverted V shaped channel region. In another embodiment, the foregoing generally conventional gate electrode is used in conjunction with an inverted V shaped gate electrode that is located within an inverted V shaped notch that comprises the inverted V shaped channel region.

US Patent:

20090072400, Mar 19, 2009

Filed:

Sep 18, 2007

Appl. No.:

11/856839

Inventors:

Huilong Zhu - Poughkeepsie NY, US
James J. Heaps-Nelson - Chandler AZ, US
Mahender Kumar - Fishkill NY, US
Christine Norris - Stamford CT, US
Ravikumar Ramachandran - Pleasantville NY, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

H01L 23/52
H01L 21/44

US Classification:

257751, 438653, 257E23141, 257E21476

Abstract:

Methods of forming a contact in two or more portions and a contact so formed are disclosed. One method includes providing a device including a silicide region; and forming a contact to the silicide region by: first forming a lower contact portion to the silicide region through a first dielectric layer, and second forming an upper contact portion to the lower contact portion through a second dielectric layer over the first dielectric layer. A contact may include a first contact portion contacting a silicide region, the first contact portion having a width less than 100 nm; and a second contact portion coupled to the first contact portion from above, the second contact portion having a width greater than the width of the first contact portion.