Christopher Gaillard Ellison

US Patent:

20110275947, Nov 10, 2011

Filed:

Mar 7, 2011

Appl. No.:

13/041932

Inventors:

Marc D. Feldman - San Antonio TX, US
Shaochen Chen - San Diego CA, US
Li-Hsin Han - Sunnyvale CA, US
Carlos A. Aguilar - Edinburg TX, US
Arturo A. Ayon - San Antonio TX, US
C. Mauli A Grawal - San Antonio TX, US
David M. Lighthart - Portland OR, US
Devang N. Patel - San Antonio TX, US
Steven R. Bailey - San Antonio TX, US
Brian A. Korgel - Round Rock TX, US
Doh C. Lee - Yuseong-gu, KR
Tushar Sharma - Austin TX, US
Christopher J. Ellison - Austin TX, US
Xiaojing Zhang - Austin TX, US

Assignee:

Board of Regents, The University of Texas System - Austin TX

International Classification:

A61N 1/378
H01L 41/113
A61N 1/39
A61B 5/02
B82Y 30/00

US Classification:

600508, 607 35, 607 5, 607 4, 310319, 977762, 977925

Abstract:

Aspects according to the present invention provide a method and implant suitable for implantation inside a human body that includes a power consuming means responsive to a physiological requirement of the human body, a power source and a power storage device. The power source comprises a piezoelectric assembly that is configured to generate an electrical current when flexed by the tissue of the body and communicate the generated current to the power storage device, which is electrically coupled to the power source and to the power consuming means.

US Patent:

20130022785, Jan 24, 2013

Filed:

Jun 20, 2012

Appl. No.:

13/528314

Inventors:

Christopher John Ellison - Austin TX, US
Julia Cushen - Austin TX, US
Issei Otsuka - Grenoble, FR
C. Grant Willson - Austin TX, US
Christopher M. Bates - Austin TX, US
Jeffery Alan Easley - Austin TX, US
Redouane Borsali - Grenoble-Saint Martin d'Hares, FR
Sebastien Fort - Grenoble-Saint Martin d'Hares, FR
Sami Halila - Beaucroissant, FR

International Classification:

C08F 283/06
B44C 1/22
B32B 33/00
B05D 3/00
B05D 3/12
B82Y 30/00

US Classification:

428141, 525 543, 427331, 427335, 427240, 216 49, 977700

Abstract:

The present invention discloses diblock copolymer systems that self-assemble to produce very small structures. These co-polymers consist of one block that contains silicon and another block comprised of an oligosaccharide that are coupled by azide-alkyne cycloaddition.

US Patent:

20130045361, Feb 21, 2013

Filed:

Mar 17, 2011

Appl. No.:

13/583518

Inventors:

C. Grant Willson - Austin TX, US
Christopher M. Bates - Austin TX, US
Jeffrey Strahan - Greer SC, US
Christopher John Ellison - Austin TX, US

International Classification:

B32B 27/32
B32B 33/00
B05D 1/38
B05D 3/12
B82Y 30/00
B82Y 40/00

US Classification:

428141, 4273855, 427240, 428523, 428336, 977892, 977755

Abstract:

The present invention relates to a method the synthesis and utilization of random, cross-linked, substituted polystyrene copolymers as polymeric cross-linked surface treatments (PXSTs) to control the orientation of physical features of a block copolymer deposited over the first copolymer. Such methods have many uses including multiple applications in the semi-conductor industry including production of templates for nanoimprint lithography.

US Patent:

20130196019, Aug 1, 2013

Filed:

Mar 17, 2011

Appl. No.:

13/583369

Inventors:

C. Grant Willson - Austin TX, US
Christopher M. Bates - Austin TX, US
Jeffrey Strahan - Austin TX, US
Christopher John Ellison - Austin TX, US
Brennen Mueller - Atlanta GA, US

Assignee:

National University of Sinapore - Singapore

International Classification:

B05D 3/10
H01L 21/02

US Classification:

425470, 216 11

Abstract:

The present invention describes the synthesis of silicon-containing monomers and copolymers. The synthesis of a monomer, trimethyl-(2-methylenebut-3-enyl)silane (TMSI) and subsequent synthesis of diblock copolymer with styrene, forming polystyrene-block-polytrimethylsilyl isoprene, and synthesis of diblock copolymer Polystyrene-block-polymethacryloxymethyltrimethylsilane or PS-b-P(MTMSMA). These silicon containing diblock copolymers have a variety of uses. One preferred application is as novel imprint template material with sub-100 nm features for lithography.

US Patent:

20130209757, Aug 15, 2013

Filed:

Feb 7, 2013

Appl. No.:

13/761324

Inventors:

Carlton Grant Willson - Austin TX, US
William J. Durand - Austin TX, US
Christopher John Ellison - Austin TX, US
Christopher M. Bates - Austin TX, US
Takehiro Seshimo - Austin TX, US
Julia Cushen - Austin TX, US
Logan J. Santos - Austin TX, US
Leon Dean - Spokane WA, US
Erica L. Rausch - Austin TX, US

International Classification:

C23C 16/44
B29C 43/32

US Classification:

4281951, 4272481, 4272556, 216 58, 427240, 4284111

Abstract:

The present invention uses vacuum deposited thin films of material to create an interface that non-preferentially interacts with different domains of an underlying block copolymer film. The non-preferential interface prevents formation of a wetting layer and influences the orientation of domains in the block copolymer. The purpose of the deposited polymer is to produce nanostructured features in a block copolymer film that can serve as lithographic patterns.

US Patent:

20130266780, Oct 10, 2013

Filed:

Feb 7, 2013

Appl. No.:

13/761763

Inventors:

Christopher John Ellison - Austin TX, US
Carlton Grant Willson - Austin TX, US
Julia Cushen - Austin TX, US
Christopher M. Bates - Austin TX, US

International Classification:

B05C 21/00

US Classification:

428201, 4272481, 4272556, 216 58, 427240, 4284111

Abstract:

The present invention includes a diblock copolymer system that self-assembles at very low molecular weights to form very small features. In one embodiment, one polymer in the block copolymer contains silicon, and the other polymer is a polylactide. In one embodiment, the block copolymer is synthesized by a combination of anionic and ring opening polymerization reactions. In one embodiment, the purpose of this block copolymer is to form nanoporous materials that can be used as etch masks in lithographic patterning.

US Patent:

20130280497, Oct 24, 2013

Filed:

Feb 7, 2013

Appl. No.:

13/761918

Inventors:

Carlton Grant Wilson - Austin TX, US
Christopher John Ellison - Austin TX, US
Takehiro Seshimo - Austin TX, US
Julia Cushen - Austin TX, US
Christopher M. Bates - Austin TX, US
Leon Dean - Spokane WA, US
Logan J. Santos - Austin TX, US
Erica L. Rausch - Austin TX, US

International Classification:

C09D 137/00

US Classification:

4281951, 4274071, 216 58, 4273855, 428500

Abstract:

The present invention involves the use of random copolymer top coats that can be spin coated onto block copolymer thin films and used to control the interfacial energy of the top coat-block copolymer interface. The top coats are soluble in aqueous weak base and can change surface energy once they are deposited onto the block copolymer thin film. The use of self-assembled block copolymers to produce advanced lithographic patterns relies on their orientation control in thin films. Top coats potentially allow for the facile orientation control of block copolymers which would otherwise be quite challenging.

US Patent:

20130344242, Dec 26, 2013

Filed:

Jun 19, 2013

Appl. No.:

13/922011

Inventors:

Christopher John Ellison - Austin TX, US
Takehiro Seshimo - Austin, JP
Julia Cushen - Austin TX, US
Christopher M. Bates - Austin TX, US
Leon Dean - Spokane WA, US
Logan J. Santos - Austin TX, US
Erica L. Rausch - Austin TX, US
Michael Maher - Austin TX, US

International Classification:

C09D 137/00

US Classification:

427240, 4274071, 427258, 427261, 4274072

Abstract:

The use of self-assembled block copolymer structures to produce advanced lithographic patterns relies on control of the orientation of these structures in thin films. In particular, orientation of cylinders and lamellae perpendicular to the plane of the block copolymer film is required for most applications. The preferred method to achieve orientation is by heating. The present invention involves the use of polarity-switching top coats to control block copolymer thin film orientation by heating. The top coats can be spin coated onto block copolymer thin films from polar casting solvents and they change composition upon thermal annealing to become “neutral”. Top coats allow for the facile orientation control of block copolymers which would otherwise not be possible by heating alone.