Christopher J Shepard

US Patent:

8035277, Oct 11, 2011

Filed:

Aug 1, 2008

Appl. No.:

12/221276

Inventors:

Bradley P. Barber - Acton MA, US
Craig E. Carpenter - Shirley MA, US
Paul P. Gehlert - Sterling MA, US
Christopher F. Shepard - Nashua NH, US

Assignee:

Avago Technologies Wireless IP (Singapore) Pte.Ltd. - Singapore

International Classification:

H01L 41/08

US Classification:

310334, 310320, 310364

Abstract:

According to an exemplary embodiment, a method of forming a multi-layer electrode for growing a piezoelectric layer thereon includes a step of forming a high conductivity metal layer over a substrate. The method further includes a step of forming a seed layer over the high conductivity metal layer. The method further includes a step of forming a high density metal layer over the seed layer. The method further includes a step of forming a piezoelectric layer over the high density metal layer. The high conductivity metal layer, the seed layer, and the high density metal layer form the multi-layer electrode on which the piezoelectric layer is grown.

US Patent:

8586195, Nov 19, 2013

Filed:

Jul 1, 2008

Appl. No.:

12/215950

Inventors:

Bradley P. Barber - Acton MA, US
Paul P. Gehlert - Sterling MA, US
Christopher F. Shepard - Nashua NH, US

Assignee:

Avago Technologies General IP (Singapore) Pte. Ltd. - Singapore

International Classification:

B32B 15/00
B32B 5/00
B05D 1/36
C23C 16/06

US Classification:

428621, 428409, 428469, 333193, 333195, 310313 R, 310313 D, 310322, 310324

Abstract:

According to an exemplary embodiment, a method of forming a metal layer having reduced roughness includes a step of forming a seed layer over a dielectric layer. The method further includes a step of forming the metal layer over the seed layer. The seed layer causes a top surface of the metal layer to have reduced roughness. The seed layer and the metal layer can be formed in a same process chamber or in different process chambers. The dielectric layer, the seed layer, and the metal layer having reduced roughness can be utilized in an acoustic mirror structure.

US Patent:

8601655, Dec 10, 2013

Filed:

Aug 1, 2008

Appl. No.:

12/221273

Inventors:

Bradley P. Barber - Acton MA, US
Paul P. Gehlert - Sterling MA, US
Christopher F. Shepard - Nashua NH, US

Assignee:

Avago Technologies General IP (Singapore) Pte. Ltd. - Singapore

International Classification:

H04R 17/10
C04B 35/622

US Classification:

29 2535, 29846, 264430, 252 629 PZ

Abstract:

According to an exemplary embodiment, a bulk acoustic wave structure includes a lower electrode situated over a substrate. The bulk acoustic wave structure further includes a piezoelectric layer situated over the lower electrode, where the piezoelectric layer comprises aluminum copper nitride. The bulk acoustic wave structure further includes an upper electrode situated over the lower electrode. The bulk acoustic wave structure can further include a bond pad connected to the upper electrode, where the bond pad comprises aluminum copper. The lower electrode can include a high density metal situated adjacent to the piezoelectric layer and a high conductivity metal layer underlying the high density metal layer.

US Patent:

20080211352, Sep 4, 2008

Filed:

May 9, 2008

Appl. No.:

12/151822

Inventors:

Bradley Barber - Acton MA, US
Paul P. Gehlert - Sterling MA, US
Sahana Kenchappa - Woburn MA, US
Christopher F. Shepard - Nashua NH, US

International Classification:

H01L 41/18
H01L 41/22
H01L 41/08

US Classification:

310335, 29 2535

Abstract:

According to one embodiment of the invention, an acoustic mirror structure situated in a bulk acoustic wave structure includes a number of alternating low acoustic impedance and high acoustic impedance layers situated on a substrate. Each high acoustic impedance layer includes a first mole percent of a primary metal and a second mole percent of a secondary metal, where the first mole percent of the primary metal is greater than the second mole percent of the secondary metal, and where the secondary metal causes each high acoustic impedance layer to have increased resistivity. According to this exemplary embodiment, the second mole percent of the secondary metal can cause only a minimal decrease in density of each high acoustic impedance layer. The increased resistivity of each high acoustic impedance layer can cause a reduction in electrical loss in the bulk acoustic wave structure.

US Patent:

20080241365, Oct 2, 2008

Filed:

Apr 22, 2008

Appl. No.:

12/148836

Inventors:

Bradley Barber - Acton MA, US
Paul P. Gehlert - Sterling MA, US
Sahana Kenchappa - Woburn MA, US
Christopher F. Shepard - Nashua NH, US

International Classification:

B05D 5/12

US Classification:

4271261

Abstract:

According to one embodiment of the invention, an acoustic mirror structure situated in a bulk acoustic wave structure includes a number of alternating low acoustic impedance and high acoustic impedance layers situated on a substrate. Each high acoustic impedance layer includes a first mole percent of a primary metal and a second mole percent of a secondary metal, where the first mole percent of the primary metal is greater than the second mole percent of the secondary metal, and where the secondary metal causes each high acoustic impedance layer to have increased resistivity. According to this exemplary embodiment, the second mole percent of the secondary metal can cause only a minimal decrease in density of each high acoustic impedance layer. The increased resistivity of each high acoustic impedance layer can cause a reduction in electrical loss in the bulk acoustic wave structure.

US Patent:

20130342284, Dec 26, 2013

Filed:

Aug 23, 2013

Appl. No.:

13/974602

Inventors:

- Singapore, SG
Paul P. Gehlert - Sterling MA, US
Christopher F. Shepard - Nashua NH, US

Assignee:

Avogo Technologies General IP (Singapore) Pte. Ltd - Singapore

International Classification:

H03H 9/54

US Classification:

333187

Abstract:

According to an exemplary embodiment, a bulk acoustic wave structure includes a lower electrode situated over a substrate. The bulk acoustic wave structure further includes a piezoelectric layer situated over the lower electrode, where the piezoelectric layer comprises aluminum copper nitride. The bulk acoustic wave structure further includes an upper electrode situated over the lower electrode. The bulk acoustic wave structure can further include a bond pad connected to the upper electrode, where the bond pad comprises aluminum copper. The lower electrode can include a high density metal situated adjacent to the piezoelectric layer and a high conductivity metal layer underlying the high density metal layer.

US Patent:

7414350, Aug 19, 2008

Filed:

Mar 3, 2006

Appl. No.:

11/367559

Inventors:

Bradley Barber - Acton MA, US
Paul P. Gehlert - Sterling MA, US
Sahana Kenchappa - Woburn MA, US
Christopher F. Shepard - Nashua NH, US

Assignee:

Skyworks Solutions, Inc. - Woburn MA

International Classification:

H01L 41/08

US Classification:

310324, 310334, 333187

Abstract:

According to one embodiment of the invention, an acoustic mirror structure situated in a bulk acoustic wave structure includes a number of alternating low acoustic impedance and high acoustic impedance layers situated on a substrate. Each high acoustic impedance layer includes a first mole percent of a primary metal and a second mole percent of a secondary metal, where the first mole percent of the primary metal is greater than the second mole percent of the secondary metal, and where the secondary metal causes each high acoustic impedance layer to have increased resistivity. According to this exemplary embodiment, the second mole percent of the secondary metal can cause only a minimal decrease in density of each high acoustic impedance layer. The increased resistivity of each high acoustic impedance layer can cause a reduction in electrical loss in the bulk acoustic wave structure.