Christopher D Theis

US Patent:

20020104989, Aug 8, 2002

Filed:

Apr 20, 2000

Appl. No.:

09/557015

Inventors:

Utpal Chakrabarti - Allentown PA, US
Robert Comizzoli - Belle Mead NJ, US
John Osenbach - Kutztown PA, US
Christopher Theis - Macungie PA, US

International Classification:

H01L031/109
H01L031/072
H01L031/0336
H01L031/0328
H01L029/06

US Classification:

257/012000

Abstract:

A non-hermetic APD for operation in a moisture-containing ambient comprises an InP/InGaAsP-containing Group III-V compound semiconductor body and a p-n junction formed in the body. Typically the junction intersects a top surface of the body. A patterned dielectric layer is formed on the surface so as to cover at least those regions of the surface that are intersected by the junction. An electrode is formed in an opening in the dielectric layer so as to make electrical contact with one side of the junction. Importantly, the thickness of the dielectric layer is sufficient to reduce the leakage current through it to less than about 1 nA when the operating voltage is in the range of about 20-100 V. In accordance with a preferred embodiment, the thickness of the dielectric layer is greater than about 2 m when the applied voltage is in excess of about 20 V. Moreover, the composition of dielectric layer may be either inorganic (e.g., a silicon nitride) or a combination of inorganic and organic materials.