Corey Andrew Jordan

US Patent:

7977708, Jul 12, 2011

Filed:

Nov 15, 2007

Appl. No.:

11/941065

Inventors:

Timothy Henderson - Portland OR, US
Jeremy Middleton - Beaverton OR, US
Sumir Varma - Beaverton OR, US
Corey Jordan - Portland OR, US
Gerard Mahoney - Beaverton OR, US
Bradley Avrit - Hillsboro OR, US
Lucius Rivers - Portland OR, US

Assignee:

Triquint Semiconductor, Inc. - Hillsboro OR

International Classification:

H01L 29/66

US Classification:

257195, 257192, 257197, 257E29171, 257E29218

Abstract:

A co-integrated HBT/FET apparatus and system, and methods for making the same, are disclosed. A co-integrated HBT/FET apparatus may include a first epitaxial structure formed over a substrate, the first epitaxial structure forming, at least in part, a FET device, a separation layer formed over the first epitaxial structure, and a second epitaxial structure formed over the separation layer, the second epitaxial structure forming, at least in part, a heterojunction bipolar transistor (HBT) device.