Craig E Nelson

US Patent:

40953939, Jun 20, 1978

Filed:

Feb 18, 1977

Appl. No.:

5/770194

Inventors:

Craig R. Nelson - Green Village NJ
Roy A. Nelson - LATE OF Green Village NJ
by Elizabeth D. Nelson - Green Village NJ

International Classification:

B65B 502
B65B 910
B65B 4330

US Classification:

53183

Abstract:

A bag forming and filling apparatus in which a continuous tube of heat sealable plastic is fed from a roll along a pathway where it is cut to the desired length and sealed on one end. The opposite end of the sealed tubing engages over an expandable hollow mandrel which expands the open end of the tube to permit material to be inserted therein. The filled section of tubing is then fed in reverse along the same path to a point of storage or use.

US Patent:

43988792, Aug 16, 1983

Filed:

Jun 19, 1981

Appl. No.:

6/275412

Inventors:

Paul R. DuPont - Gillette NJ
Craig R. Nelson - Murray Hill NJ

International Classification:

B29C 1700

US Classification:

425392

Abstract:

A portable apparatus for reforming plastic pipe ends is disclosed. The apparatus includes a heat sink clamp and depth collar for locating said clamp a predetermined distance from the end of the plastic pipe end. This heat sink clamp substantially limits axial heat penetration from an oven into the plastic pipe so as to permit the reshaping of the pipe end into a sanitary flow end, i. e. an end having imperfection-free contours.

US Patent:

53363248, Aug 9, 1994

Filed:

Dec 4, 1991

Appl. No.:

7/803647

Inventors:

Richard A. Stall - Warren NJ
Gary S. Tompa - Somerville NJ
Alexander Gurary - Bridgewater NJ
Craig R. Nelson - Berkeley Heights NJ

Assignee:

Emcore Corporation - Somerset NJ

International Classification:

C23C 1600

US Classification:

118719

Abstract:

An apparatus for depositing a coating on a substrate substantially eliminates the occurrence of oval defects by creating a heated tortuous path through which the source material vapors must travel before depositing on the substrate. In addition, shut-off valves for each of the source materials are positioned in the reaction chamber in close proximity to the substrate, thereby enabling layers of different compositions to be deposited with sharp transitions between adjacent layers. The apparatus may be used to efficiently coat large areas uniformly, and works equally well with either elemental or chemical source materials, or certain combinations of both. The features of the coating apparatus may be embodied in replacement source cells for retrofitting in conventional molecular beam and chemical beam epitaxy units.

US Patent:

49694162, Nov 13, 1990

Filed:

Feb 27, 1990

Appl. No.:

7/488393

Inventors:

Norman E. Schumaker - Warren NJ
Richard A. Stall - Warren NJ
Craig R. Nelson - Green Village NJ
Wilfried R. Wagner - Basking Ridge NJ

Assignee:

Emcore, Inc. - South Plainfield NJ

International Classification:

C23C 1600

US Classification:

118725

Abstract:

Substrates such as semiconductor wafers are treated with a gas by advancing the substrate along a path, preferably a circular path through the gas while maintaining a face of the substrate transverse, preferably oblique, to the path so that the gas contacts be exposed from the face of the substrate. Preferably, a plurality of substrates are treated simultaneously, and the substrates serve as vanes to impel the gas into rotational motion, thereby pumping the gas through the process chamber. Preferably, the substrates are carried on susceptors having generally planar faces, the susceptors also serving as vanes impelling the gas into rotational motion. The gas may be a depositing gas for forming epitaxial layers on the faces of the substrates, or an etching gas.

US Patent:

55446183, Aug 13, 1996

Filed:

May 23, 1994

Appl. No.:

8/247659

Inventors:

Richard A. Stall - Warren NJ
Gary S. Tompa - Somerville NJ
Alexander Gurary - Bridgewater NJ
Craig R. Nelson - Berkeley Heights NJ

International Classification:

H01L 2120
C30B 2308

US Classification:

117102

Abstract:

An apparatus for depositing a coating on a substrate substantially eliminates the occurrence of oval defects by creating a heated tortuous path through which the source material vapors must travel before depositing on the substrate. In addition, shut-off valves for each of the source materials are positioned in the reaction chamber in close proximity to the substrate, thereby enabling layers of different compositions to be deposited with sharp transitions between adjacent layers. The apparatus may be used to efficiently coat large areas uniformly, and works equally well with either elemental or chemical source materials, or certain combinations of both. The features of the coating apparatus may be embodied in replacement source cells for retrofitting in conventional molecular beam and chemical beam epitaxy units.

US Patent:

47723564, Sep 20, 1988

Filed:

Jul 3, 1986

Appl. No.:

6/881628

Inventors:

Norman E. Schumaker - Warren NJ
Richard A. Stall - Warren NJ
Craig R. Nelson - Green Village NJ
Wilfried R. Wagner - Basking Ridge NJ

Assignee:

Emcore, Inc. - South Plainfield NJ

International Classification:

C23C 1600

US Classification:

156613

Abstract:

Substrates such as semiconductor wafers are treated with a gas by advancing the substrate along a path, preferably a circular path through the gas while maintaining a face of the substrate transverse, preferably oblique, to the path so that the gas contacts be exposed from the face of the substrate. Preferably, a plurality of substrates are treated simultaneously, and the substrates serve as vanes to impel the gas into rotational motion, thereby pumping the gas through the process chamber. Preferably, the substrates are carried on susceptors having generally planar faces, the susceptors also serving as vanes impelling the gas into rotational motion. The gas may be a depositing gas for forming epitaxial layers on the faces of the substrates, or an etching gas.

US Patent:

48389838, Jun 13, 1989

Filed:

Mar 18, 1988

Appl. No.:

7/169621

Inventors:

Norman E. Schumaker - Warren NJ
Richard A. Stall - Warren NJ
Craig R. Nelson - Green Village NJ
Wilfried R. Wagner - Basking Ridge NJ

Assignee:

Emcore, Inc. - South Plainfield NJ

International Classification:

C23C 1600

US Classification:

156613

Abstract:

Substrates such as semiconductor wafers are treated with a gas by advancing the substrate along a path, preferably a circular path through the gas while maintaining a face of the substrate transverse, preferably oblique, to the path so taht the gas contacts be exposed from the face of the substrate. Preferably, a plurality of substrates are treated simultaneously, and the substrates serve as vanes to impel the gas into rotational motion, thereby pumping the gas through the process chamber. Preferably, the substrates are carried on susceptors having generally planar faces, the susceptors also serving as vanes impelling the gas into rotational motion. The gas may be a depositing gas for forming epitaxial layers on the faces of the substrates, or an etching gas.