Curtis Lee Bailey

US Patent:

20220333239, Oct 20, 2022

Filed:

Sep 24, 2020

Appl. No.:

17/762525

Inventors:

- Fremont CA, US
Karl Frederick LEESER - West Linn OR, US
Xinyi CHEN - Beaverton OR, US
Mukesh Dhami SINGH - Lucknow, IN
Troy GOMM - Tigard OR, US
Timothy Scott THOMAS - Wilsonville OR, US
Curtis W. BAILEY - West Linn OR, US

International Classification:

C23C 16/458
H01L 21/67
H01L 21/683
C23C 16/52

Abstract:

A heat shield for a platen of a substrate support includes a body and absorption-reflection-transmission regions. The absorption-reflection-transmission regions are in contact with the body and are configured to at least one of affect or modulate at least a portion of a heat flux pattern between a distal reference surface and the platen. The absorption-reflection-transmission regions include tunable aspects to tune the at least a portion of the heat flux pattern.

US Patent:

20220275504, Sep 1, 2022

Filed:

May 16, 2022

Appl. No.:

17/663614

Inventors:

- Fremont CA, US
Guangbi YUAN - Beaverton OR, US
Thadeous BAMFORD - Portland OR, US
Curtis Warren BAILEY - West Linn OR, US
Tony KAUSHAL - Campbell CA, US
Krishna BIRRU - Fremont CA, US
William SCHLOSSER - Tigard OR, US
Bo GONG - Sherwood OR, US
Huatan QIU - Portland OR, US
Fengyuan LAI - Sherwood OR, US
Leonard Wai Fung KHO - San Francisco CA, US
Anand CHANDRASHEKAR - Fremont CA, US
Andrew H. BRENINGER - Hillsboro OR, US
Chen-Hua HSU - Sherwood OR, US
Geoffrey HOHN - Portland OR, US
Gang LIU - Fremont CA, US
Rohit KHARE - San Ramon CA, US

International Classification:

C23C 16/44
C23C 16/455
H01J 37/32
C23C 16/40

Abstract:

Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

US Patent:

20230052089, Feb 16, 2023

Filed:

Feb 4, 2021

Appl. No.:

17/796406

Inventors:

- Fremont CA, US
Karl Frederick Leeser - West Linn OR, US
Curtis W. Bailey - West Linn OR, US
Keith Joseph Martin - Tualatin OR, US
Rigel Martin Bruening - Sherwood OR, US

International Classification:

H01J 37/32
C23C 16/44
C23C 16/52
C23C 16/505

Abstract:

A reactor system comprises a process chamber, a gas inlet, and a dispenser. The dispenser is coupled to the gas inlet. The dispenser controls a gas flow from a vial to the gas inlet. The vial includes a coating material that, when released inside the process chamber under operating conditions of the reaction system, coats an inner wall of the process chamber.

US Patent:

20230002891, Jan 5, 2023

Filed:

Sep 7, 2022

Appl. No.:

17/930397

Inventors:

- Fremont CA, US
Guangbi YUAN - Beaverton OR, US
Thadeous BAMFORD - Portland OR, US
Curtis Warren BAILEY - West Linn OR, US
Tony KAUSHAL - Campbell CA, US
Krishna BIRRU - Fremont CA, US
William SCHLOSSER - Tigard OR, US
Bo GONG - Sherwood OR, US
Huatan QIU - Portland OR, US
Fengyuan LAI - Sherwood OR, US
Leonard Wai Fung KHO - San Francisco CA, US
Anand CHANDRASHEKAR - Fremont CA, US
Andrew H. BRENINGER - Hillsboro OR, US
Chen-Hua HSU - Sherwood OR, US
Geoffrey HOHN - Portland OR, US
Gang LIU - Fremont CA, US
Rohit KHARE - San Ramon CA, US

International Classification:

C23C 16/44
C23C 16/455
H01J 37/32
C23C 16/40

Abstract:

Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

US Patent:

20210108314, Apr 15, 2021

Filed:

Oct 26, 2020

Appl. No.:

17/080749

Inventors:

- Fremont CA, US
Nick Linebarger - Tualatin OR, US
Curtis Bailey - West Linn OR, US

International Classification:

C23C 16/455
H01L 21/02
H01L 21/687
C23C 16/505
C23C 16/52
H01L 21/67
C23C 16/04

Abstract:

A method for processing a substrate in a plasma processing system having a showerhead and a shower-pedestal oriented below the showerhead is provided. The method includes supporting the substrate between the showerhead and the shower-pedestal. The substrate is supported to be spaced apart from the shower-pedestal and the shower head. The method includes flowing a process gas out of the shower-pedestal in a direction that is toward a backside of the substrate, and flowing an inert gas out of the showerhead in a direction that is toward a topside of the substrate. The method includes generating a plasma, using the process gas, between the shower-pedestal and the backside of the substrate. The plasma is configured to deposit a film on said backside of the substrate and the inert gas is configured to prevent or reduce deposition on said topside of the substrate.

US Patent:

20200347497, Nov 5, 2020

Filed:

Jul 22, 2020

Appl. No.:

16/935760

Inventors:

- Fremont CA, US
Guangbi Yuan - Beaverton OR, US
Thadeous Bamford - Portland OR, US
Curtis Warren Bailey - West Linn OR, US
Tony Kaushal - Campbell CA, US
Krishna Birru - Fremont CA, US
William Schlosser - Sherwood OR, US
Bo Gong - Sherwood OR, US
Huatan Qiu - Portland OR, US
Fengyuan Lai - Sherwood OR, US
Leonard Wai Fung Kho - San Francisco CA, US
Anand Chandrashekar - Fremont CA, US
Andrew H. Breninger - Hillsboro OR, US
Chen-Hua Hsu - Sherwood OR, US
Geoffrey Hohn - Portland OR, US
Gang Liu - Fremont CA, US
Rohit Khare - Fremont CA, US

International Classification:

C23C 16/44
C23C 16/455
H01J 37/32
C23C 16/40

Abstract:

Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

US Patent:

20200051789, Feb 13, 2020

Filed:

Aug 8, 2018

Appl. No.:

16/058090

Inventors:

- Fremont CA, US
Curtis W. BAILEY - West Linn OR, US
Easwar SRINIVASAN - Portland OR, US
Devon PELKEY - Beaverton OR, US

International Classification:

H01J 37/32
H01L 21/67
H05B 3/22
G01K 7/16
G01K 15/00

Abstract:

A showerhead for a plasma chamber comprises a resistive heater configured to receive power to heat the showerhead of the plasma chamber, and a resistive element thermally bonded to the showerhead of the plasma chamber. The resistive element changes resistance in response to a change in temperature of the showerhead. The resistive element is encapsulated in an insulating material to electrically insulate the resistive element from the showerhead. The insulating material is a good conductor of heat. The power to the resistive heater is received based on the resistance of the resistive element.

US Patent:

20190185999, Jun 20, 2019

Filed:

Apr 16, 2018

Appl. No.:

15/954454

Inventors:

- Fremont CA, US
Guangbi Yuan - Beaverton OR, US
Thadeous Bamford - Portland OR, US
Curtis Warren Bailey - West Linn OR, US
Tony Kaushal - Campbell CA, US
Krishna Birru - Sunnyvale CA, US
William Schlosser - Sherwood OR, US
Bo Gong - Sherwood OR, US
Huatan Qiu - Lake Oswego OR, US
Fengyuan Lai - Tualatin OR, US
Leonard Wai Fung Kho - San Francisco CA, US
Anand Chandrashekar - Fremont CA, US
Andrew H. Breninger - Hillsboro OR, US
Chen-Hua Hsu - Sherwood OR, US
Geoffrey Hohn - Portland OR, US
Gang Liu - Fremont CA, US
Rohit Khare - Fremont CA, US

International Classification:

C23C 16/44
C23C 16/455
C23C 16/40
H01J 37/32

Abstract:

Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.