Cynthia L Brooks

US Patent:

7250309, Jul 31, 2007

Filed:

Jan 9, 2004

Appl. No.:

10/754321

Inventors:

Alfred W. Mak - Union City CA, US
Yung-Hee Yvette Lee - San Jose CA, US
Cynthia B. Brooks - Austin TX, US
Melisa J. Buie - San Jose CA, US
Turgut Sahin - Cupertino CA, US
Jian Ding - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G01R 31/26

US Classification:

438 14, 438 15, 438 16, 438 17, 257 48, 250307

Abstract:

Methods and apparatus for controlling the critical dimensions and monitoring the phase shift angles of photomasks. Critical dimensions measurement data before wafer processing and after wafer processing are collected by an integrated metrology tool to adjust the process recipe, to determine if the critical dimensions are in specification and to determine if additional etching is required. Phase shift angle and uniformity across substrate measurement after wafer processing are collected by an integrated metrology tool to determine if the phase shift angle and its uniformity are in specification. The real time process recipe adjustment and determination if additional etching is requires allow tightening of the process control. The phase shift angle and uniformity monitoring allows in-line screening of phase shift photomasks.

US Patent:

20070296980, Dec 27, 2007

Filed:

Jul 31, 2007

Appl. No.:

11/831943

Inventors:

ALFRED MAK - Union City CA, US
Yung-Hee Lee - San Jose CA, US
Cynthia Brooks - Austin TX, US
Melisa Buie - San Jose CA, US
Turgut Sahin - Cupertino CA, US
Jian Ding - San Jose CA, US

International Classification:

G01B 11/14

US Classification:

356625000

Abstract:

Methods and apparatus for controlling the critical dimensions and monitoring the phase shift angles of photomasks. Critical dimensions measurement data before wafer processing and after wafer processing are collected by an integrated metrology tool to adjust the process recipe, to determine if the critical dimensions are in specification and to determine if additional etching is required. Phase shift angle and uniformity across substrate measurement after wafer processing are collected by an integrated metrology tool to determine if the phase shift angle and its uniformity are in specification. The real time process recipe adjustment and determination if additional etching is requires allow tightening of the process control. The phase shift angle and uniformity monitoring allows in-line screening of phase shift photomasks.