Cynthia D Lee

US Patent:

6985229, Jan 10, 2006

Filed:

May 30, 2002

Appl. No.:

10/158775

Inventors:

Cynthia C. Lee - Orlando FL, US
Stephen Arlon Meisner - St. Cloud FL, US
Thomas Michael Wolf - Orlando FL, US
Alberto Santoni - Orlando FL, US
John Martin McIntosh - Orlando FL, US

Assignee:

Agere Systems, Inc. - Allentown PA

International Classification:

G01B 11/00
G01R 31/26
H01L 21/66

US Classification:

356401, 438 16

Abstract:

A method for nondestructively characterizing alignment overlay between two layers of a semiconductor wafer. An incident beam of radiation is directed upon the wafer surface and the properties of the resulting diffracted beam are determined, in one embodiment as a function of wavelength or incident angle. The spectrally or angularly resolved characteristics of the diffracted beam are related to the alignment of the overlay features. A library of calculated diffraction spectra is established by modeling a full range of expected variations in overlay alignment. The spectra resulting from the inspection of an actual wafer having alignment targets in at least two layers is compared against the library to identify a best fit to characterize the actual alignment. The results of the comparison may be used as an input for upstream and/or downstream process control.

US Patent:

20030184769, Oct 2, 2003

Filed:

Mar 27, 2002

Appl. No.:

10/108096

Inventors:

Erik Houge - Orlando FL, US
John McIntosh - Orlando FL, US
Cynthia Lee - Orlando FL, US

International Classification:

G01B011/04

US Classification:

356/636000

Abstract:

A method () for nondestructively characterizing a doped region () of a semiconductor wafer () in order to determine the acceptability of a pattern transfer process. Of particular interest is the determination of the lateral profile of the implanted structure. An incident beam () of radiation is directed upon the wafer surface () and the properties of the resulting refracted beam () are measured as a function of wavelength. The spectrally-resolved diffraction characteristics of the refracted beam are directly related to the shape and scale characteristics of the doped region. A library () of calculated diffraction spectra is established by modeling a full range of expected variations in the doped region structures. The spectra resulting from the inspection of an actual doped region () is compared against the library to identify a best fit () in order to characterize the actual implant (). The results of the comparison may be used as an input for upstream and/or downstream process control ().

US Patent:

62845985, Sep 4, 2001

Filed:

Nov 23, 1999

Appl. No.:

9/447893

Inventors:

Patrick J. Kelley - Orlando FL
Ranbir Singh - Orlando FL
Larry B. Fritzinger - Orlando FL
Cynthia C. Lee - Orlando FL
John Simon Molloy - Orlando FL

Assignee:

Agere Systems Guardian Corp. - Orlando FL

International Classification:

H01L 31336

US Classification:

438257

Abstract:

A method of forming round corners for a gate oxide between a floating gate and a control gate of a memory cell comprises the steps of forming the floating gate over a tunnel oxide; forming a mask over the floating gate; forming rounded end caps adjacent distal ends of the mask; transferring the rounding of the end caps to top corners of the floating gate; forming the gate oxide over the floating gate; and, forming the control gate over the gate oxide. A memory cell having a rounded corner interface between the floating gate and control gate is also provided.

US Patent:

61976997, Mar 6, 2001

Filed:

Jan 20, 1998

Appl. No.:

9/009399

Inventors:

Larry B. Fritzinger - Orlando FL
Cynthia C. Lee - Orlando FL
Edward M. Middlebrook - Kissimmee FL
John M. Sniegowski - Windermere FL

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

H01H 100

US Classification:

438710

Abstract:

The present invention provides a method for cleaning a contaminated chamber used in the manufacture of semiconductor devices. In one embodiment, the method comprises the steps of injecting, under pressure, a gas mixture of a fluorine-containing gas and an inert gas into the contaminated chamber, radiating the contaminated chamber with a radio frequency during the step of injecting, and removing volatile by-products or solid particulates from the contaminated chamber by performing pump-purge cycles within the contaminated chamber.

US Patent:

61747866, Jan 16, 2001

Filed:

Nov 23, 1999

Appl. No.:

9/447154

Inventors:

Patrick J. Kelley - Orlando FL
Ranbir Singh - Orlando FL
Larry B. Fritzinger - Orlando FL
Cynthia C. Lee - Orlando FL
John Simon Molloy - Orlando FL

Assignee:

Lucent Technologies, Inc. - Murray Hill NJ

International Classification:

H01L 2176

US Classification:

438425

Abstract:

A method of shallow trench isolation by forming a trench in a semiconductor device comprises the steps of forming an oxide layer; forming a mask layer; anisotropically etching the mask layer; forming a second oxide layer; forming a cap layer; forming rounded end caps adjacent the mask; and transferring the rounding of the caps to the top corners of the trench. The oxide layer is formed over a substrate of the semiconductor device. The mask layer is formed over the oxide layer. The mask layer is then anisotropically etched to form the mask and an opening in the mask. The opening in the mask exposes the substrate, and the width of the opening is greater than the width of the trench. Blanket etching the cap layer forms the rounded end caps. The rounded end caps are adjacent to the mask on opposite ends of the opening, and the distance between the end caps is about equal to the width of the trench. The trench is formed by plasma etching the trench.