Dana R Weinstein

US Patent:

20130033338, Feb 7, 2013

Filed:

Apr 30, 2012

Appl. No.:

13/460670

Inventors:

Wentao Wang - Cambridge MA, US
Dana Weinstein - Cambridge MA, US

Assignee:

MASSACHUSETTS INSTITUTE OF TECHNOLOGY - Cambridge MA

International Classification:

H03H 9/02
H01L 41/22

US Classification:

333186, 427100

Abstract:

A microelectromechanical (MEM) resonator includes a resonant cavity disposed in a first layer of a first solid material disposed on a substrate and a first plurality of reflectors disposed in the first layer in a first direction with respect to the resonant cavity and to each other. Each of the first plurality of reflectors comprises an outer layer of a second solid material and an inner layer of a third solid material. The inner layer of each of the first plurality of reflectors is adjacent in the first direction to the outer layer of each reflector and to either the outer layer of an adjacent reflector or the resonant cavity.

US Patent:

20130038383, Feb 14, 2013

Filed:

Aug 12, 2011

Appl. No.:

13/209208

Inventors:

Radhika Marathe - Cambridge MA, US
Dana Weinstein - Cambridge MA, US

Assignee:

Massachusetts Institute of Technology - Cambridge MA

International Classification:

G05F 3/08
H01L 29/84

US Classification:

327537, 257254, 257E29324

Abstract:

An piezoelectric electromechanical transistor has first and second terminals formed in a semiconductor region, a gate and a piezoelectric region between the gate and the semiconductor region. The piezoelectric region may be configured to drive the semiconductor region to vibrate in response to a signal applied to the gate. The transistor may be configured to produce a signal at the first terminal at least partially based on vibration of the semiconductor region.

US Patent:

20180013398, Jan 11, 2018

Filed:

Sep 5, 2017

Appl. No.:

15/695523

Inventors:

Bichoy W. BAHR - Cambridge MA, US
Dana WEINSTEIN - Cambridge MA, US

International Classification:

H03H 9/02
H01L 41/09
H01P 3/08
H03H 9/17

Abstract:

An acoustic resonator includes a wafer and a first phononic crystal disposed on the wafer to define an acoustic waveguide so as to propagate an acoustic wave along a propagation direction. The first phononic crystal includes a first two-dimensional (2D) array of metal stripes having a first period on the propagation direction. The apparatus also includes a second phononic crystal and a third phononic crystal disposed on two sides of the first phononic crystal and having a different period from the first period. The second phononic crystal and the wafer define a first reflector to reflect the acoustic wave. The third phononic crystal and the wafer define a second reflector to reflect the acoustic wave.

US Patent:

20170170805, Jun 15, 2017

Filed:

Oct 4, 2016

Appl. No.:

15/285223

Inventors:

Wentao Wang - Cambridge MA, US
Dana Weinstein - Cambridge MA, US

International Classification:

H03H 9/17
H03H 3/02
H01G 4/06

Abstract:

A deep trench (DT) MEMS resonator includes a periodic array of unit cells, each of which includes a single DT formed in a semiconductor substrate and filled with a material whose acoustic impedance is different than that of the substrate. The filled DT is used as both an electrical capacitor and a mechanical structure at the same time, making it an elegant design that reduces footprint and fabrication complexity. Adding a second DT to each unit cell in a DT MEMS resonator forms a dual-trench DT (DTDT) MEMS resonator. In a DTDT unit cell, the first DT is filled with a conductor to sense, conduct, and/or generate an acoustic wave. The second DT in the DTDT unit cell is filled with an insulator. The width, filling, etc. of the second DT in the DTDT unit cell can be selected to tune the acoustic passband of the DTDT unit cell.

US Patent:

20170012338, Jan 12, 2017

Filed:

Sep 23, 2016

Appl. No.:

15/274056

Inventors:

Wentao Wang - Cambridge MA, US
Andreja Erbes - Juan Les Pins, FR
Dana Weinstein - Cambridge MA, US
Ashwin A. Seshia - Cambridge, GB

International Classification:

H01P 7/06
H01L 41/09
H02N 2/00
H01P 5/02

Abstract:

Examples of the present invention include unreleased coupled multi-cavity resonators and transmission filters. In some examples, the resonators include resonant cavities coupled by acoustic couplers (ABGCs) and acoustic reflectors (ABRs). These acoustic components enable improved confinement of acoustic modes within the resonator to increase the quality factor (Q) and lower the motional resistance (R). A coupled resonator with 5 cavities coupled by 4 ABGCs can achieve a Q of 1095 while a single-cavity resonator of the same device size has a Q of 760. In some examples, the devices can be configured to work as electronic transmission filters in at least two types of filter configurations. In the transmission line filter configuration, the device can include a filter structure in an arrangement (LH)H (LH), defined as a Fabry-Perot Resonator (FPR). In the multi-pole filter configuration, the device can include a filter structure in an arrangement similar to the multi-cavity resonator design.

US Patent:

20150237423, Aug 20, 2015

Filed:

Jan 26, 2015

Appl. No.:

14/605489

Inventors:

Bichoy BAHR - Cambridge MA, US
Radhika MARATHE - Cambridge MA, US
Wentao WANG - Cambridge MA, US
Dana WEINSTEIN - Cambridge MA, US

International Classification:

H04R 1/00
H04R 31/00

Abstract:

Example acoustic bandgap devices provided that can be fabricated in a semiconductor fabrication tool based on design check rules. An example device includes a substrate lying in an x-y plane and defining an x-direction and a y-direction, an acoustic resonant cavity over the substrate, and a phononic crystal disposed over the acoustic resonant cavity by generating the phononic crystal as a plurality of unit cells disposed in a periodic arrangement. Each unit cell include: (a) at least one higher acoustic impedance structure having a longitudinal axis oriented in the y-direction and a thickness in the x-direction greater than or about equal to a minimal feature thickness of the semiconductor fabrication tool, and (b) at least one lower acoustic impedance material bordering at least a portion of the at least one higher acoustic impedance structure and forming at least a portion of a remainder of the respective unit cell.