Daniel G Christensen

US Patent:

61892718, Feb 20, 2001

Filed:

Dec 7, 1998

Appl. No.:

9/207117

Inventors:

Daniel L. Christensen - Minneapolis MN

International Classification:

E04B 102

US Classification:

52233

Abstract:

A building system which uses a plurality of interlocking members which can be used to construct an unlimited number of structures which can be assembled, disassembled and used by children and adults. The building system requires no tools, fasteners or adhesives, yet creates rigid and sturdy structures of all sizes, through interlocking ends and edges.

US Patent:

D422297, Dec 8, 1998

Filed:

Feb 9, 1995

Appl. No.:

D/034646

Inventors:

Daniel L. Christensen - Minneapolis MN

International Classification:

1102

US Classification:

D11155

US Patent:

46421629, Feb 10, 1987

Filed:

Jan 2, 1986

Appl. No.:

6/815603

Inventors:

David J. Brownell - Maple Grove MN
Daniel C. Christensen - Plymouth MN
David G. Erie - Cottage Grove MN
Daniel Youngner - Maple Grove MN

Assignee:

Honeywell Inc. - Minneapolis MN

International Classification:

B44C 122
C03B 1500

US Classification:

156643

Abstract:

A method is disclosed for the planarization of a semiconductor device structure by a two stage planarization process which comprises: applying a dielectric layer over a first conductive layer, spin coating an organic layer onto the first dielectric layer, etching the device in a plasma etching process to substantially remove the organic planarization layer, then etching the device in a plasma etching process which etches the exposed dielectric layer to substantially remove all of it, removing the remaining organic planarization layer, followed by the application of a second dielectric layer under bias sputter deposition conditions. The bias sputter deposition fills trenches and eliminates peaks in the remaining first dielectric layer as it builds up the second dielectric layer. The process planarizes the dielectric layer without thickness variations dependent upon conductor layer pattern density.