Daniel Elliott Francis

US Patent:

6351260, Feb 26, 2002

Filed:

Mar 4, 1999

Appl. No.:

09/262398

Inventors:

David S. Graham - San Francisco CA
Daniel A. Francis - San Francisco CA

Assignee:

Poa Sana, Inc. - San Jose CA

International Classification:

G09G 500

US Classification:

345179, 345173, 345175, 345176, 345104

Abstract:

A user input device for an electronic device is disclosed. The user input device provides positional information using a grid of light. The grid of light is produced from a light source and waveguides. The grid of light is also received and processed using waveguides and a light detector. Optionally, optics may be used to enhance the operation of the user input device. The user input device is particularly suited for use as a user input device for a computer system or the like.

US Patent:

6647041, Nov 11, 2003

Filed:

May 26, 2000

Appl. No.:

09/580322

Inventors:

Ashish K. Verma - San Jose CA
Arnold C. Chen - Fremont CA
Daniel A. Francis - Oakland CA

Assignee:

Finisar Corporation - Sunnyvale CA

International Classification:

H01S 500

US Classification:

372 45, 372 43, 372 50

Abstract:

A monolithic semiconductor device extends primarily along a vertical direction and includes the following layers. A first semiconductor layer and a second semiconductor layer form an active region between them. A third semiconductor layer is doped the same type as the second semiconductor layer but is lattice mismatched to the second semiconductor layer. The lattice mismatch results in unwanted electrical effects. An additional doping layer, preferably a delta doping layer, is located in close proximity to the interface between the second and third semiconductor layers. The delta doping layer mitigates the unwanted electrical effects introduced by the lattice mismatch. In a preferred embodiment, the device further includes a bottom mirror layer and a top mirror layer, which together form a laser cavity including the active region.

US Patent:

6980577, Dec 27, 2005

Filed:

Mar 18, 2003

Appl. No.:

10/392671

Inventors:

Daniel A. Francis - Oakland CA, US
Chris Decker - Danville CA, US

Assignee:

Finisar Corporation - Sunnyvale CA

International Classification:

H01S005/00

US Classification:

372 50, 372 43, 372 99, 372107

Abstract:

A vertical laser cavity includes a non-planar top mirror in order to improve the optical performance of the laser cavity. In one approach, the top mirror is curved to form a plano-concave geometry with the bottom mirror, as opposed to the typical plano—plano geometry. This can reduce diffraction losses and otherwise improve optical performance.

US Patent:

7149236, Dec 12, 2006

Filed:

Oct 22, 2003

Appl. No.:

10/691376

Inventors:

Ashish K. Verma - San Jose CA, US
Arnold C. Chen - Fremont CA, US
Daniel A. Francis - Oakland CA, US

Assignee:

Finisar Corporation - Sunnyvale CA

International Classification:

H01S 5/00

US Classification:

372 50124, 372 4401, 372 4501, 372 5022, 372 4301

Abstract:

Optoelectronic devices, such as optical transmitters and optical amplifiers, are provided. The optoelectronic devices are suitable for use in connection with optical communications systems, and related components and devices, such as may be used in the transmission, reception and processing of data and other information. The optoelectronic devices are implemented as various types of semiconductors. The form, structure, properties and functionality of a particular optoelectronic semiconductor device are determined with reference to the application(s) in connection with which the optoelectronic device is to be employed.

US Patent:

7445605, Nov 4, 2008

Filed:

Mar 30, 2006

Appl. No.:

11/394449

Inventors:

William Ryan Overall - Palo Alto CA, US
Daniel Francis - Los Altos CA, US
Aimee Brigitte Angel - Atherton CA, US
R. Hardwin Mead - Palo Alto CA, US

Assignee:

The Board of Trustees of the Leland Stanford Junior University - Palo Alto CA

International Classification:

A61B 5/103
A61B 5/02
A61N 1/00

US Classification:

600595, 600483, 600527, 600587, 607 17, 607 19

Abstract:

Systems, devices and methods for detecting and monitoring cardiac dysfunction. The devices include motion sensors for detecting signals representative of the total movement of the heart, and of the apex of the heart in particular.

US Patent:

7553690, Jun 30, 2009

Filed:

Jun 14, 2005

Appl. No.:

11/151929

Inventors:

Daniel Francis - Oakland CA, US
Rashit Nabiev - East Palo Alto CA, US
Richard P. Ratowsky - Berkeley CA, US
David Bruce Young - Oakland CA, US
Sunil Thomas - Mountain View CA, US
Roman Dimitrov - San Jose CA, US

Assignee:

Finisar Corporation - Sunnyvale CA

International Classification:

H01L 21/00

US Classification:

438 91, 438 93, 438 94, 438 57

Abstract:

This disclosure is concerned with starved source diffusion methods for forming avalanche photodiodes are provided for controlling an edge effect. In one example, a method for manufacturing an avalanche photodiode includes forming an absorber layer and an avalanche layer over a substrate. Next, a patterned mask defining one or more openings is formed over a surface of the avalanche layer. Finally, a dopant is deposited over the patterned mask and the avalanche layer such that the dopant is blocked by the patterned mask but diffuses into the avalanche layer in areas where the patterned mask defines an opening. The patterned mask is configured such that the depth to which the dopant diffuses into the avalanche layer varies so as to form a sloped diffusion front in the avalanche layer.

US Patent:

7595507, Sep 29, 2009

Filed:

Apr 12, 2006

Appl. No.:

11/279553

Inventors:

Daniel Francis - Oakland CA, US
Felix Ejeckam - San Francisco CA, US
John Wasserbauer - San Leandro CA, US
Dubravko Babic - San Jose CA, US

Assignee:

Group4 Labs LLC - Menlo Park CA

International Classification:

H01L 31/0264
H01L 29/778
H01L 29/20

US Classification:

257 76, 257194, 257615, 257E29246, 257E29068

Abstract:

Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.

US Patent:

D636054, Apr 12, 2011

Filed:

Dec 28, 2009

Appl. No.:

29/348386

Inventors:

Christopher Loew - Palo Alto CA, US
Yoav Ben-Haim - San Francisco CA, US
Peter J. Bentley - San Jose CA, US
Daniel Francis - Mountain View CA, US

Assignee:

Miramar Labs, Inc. - Sunnyvale CA

International Classification:

2803

US Classification:

D23200