Daniel W Francis

US Patent:

6351260, Feb 26, 2002

Filed:

Mar 4, 1999

Appl. No.:

09/262398

Inventors:

David S. Graham - San Francisco CA
Daniel A. Francis - San Francisco CA

Assignee:

Poa Sana, Inc. - San Jose CA

International Classification:

G09G 500

US Classification:

345179, 345173, 345175, 345176, 345104

Abstract:

A user input device for an electronic device is disclosed. The user input device provides positional information using a grid of light. The grid of light is produced from a light source and waveguides. The grid of light is also received and processed using waveguides and a light detector. Optionally, optics may be used to enhance the operation of the user input device. The user input device is particularly suited for use as a user input device for a computer system or the like.

US Patent:

6445495, Sep 3, 2002

Filed:

Mar 22, 1999

Appl. No.:

09/273813

Inventors:

Jeffrey D. Walker - El Cerrito CA
Sol P. Dijaili - Moraga CA
Daniel A. Francis - Oakland CA

Assignee:

Genoa Corporation - Fremont CA

International Classification:

H01S 318

US Classification:

359344

Abstract:

A tunable-gain lasing semiconductor optical amplifier comprises a vertical-lasing semiconductor optical amplifier that includes a tunable region which allows the gain of the vertical-lasing semiconductor optical amplifier to be tuned. The tunable region comprises a region whose loss and/or phase may be tuned by adjusting a physical characteristic of the region. For example, the region may comprise a liquid crystal layer whose transmissivity may be adjusted by applying different voltages across the layer to adjust the reflectivity of a cavity mirror, or a cavity mirror whose reflectivity may be adjusted by ion implantation. In an alternative embodiment of this invention, the tunable-gain lasing semiconductor optical amplifier comprises a tunable loss element in series after the gain-clamped semiconductor optical amplifier.

US Patent:

6977424, Dec 20, 2005

Filed:

Mar 18, 2003

Appl. No.:

10/392599

Inventors:

Jeffrey D. Walker - El Cerrito CA, US
Daniel A. Francis - Oakland CA, US
Peter W. Evans - Tracy CA, US
Paul Liu - Fremont CA, US

Assignee:

Finisar Corporation - Sunnyvale CA

International Classification:

H01L031/0232

US Classification:

257432, 257623, 257625, 257 80, 257 81, 257 82, 257 12

Abstract:

An electrically pumped optical device includes a semiconductor active region and a backward diode. Both of these structures are located in the current path of the optical device, which is oriented primarily vertically. The active region has a finite extent along at least one lateral dimension. The overall structure improves the electrical performance of the device.

US Patent:

6980577, Dec 27, 2005

Filed:

Mar 18, 2003

Appl. No.:

10/392671

Inventors:

Daniel A. Francis - Oakland CA, US
Chris Decker - Danville CA, US

Assignee:

Finisar Corporation - Sunnyvale CA

International Classification:

H01S005/00

US Classification:

372 50, 372 43, 372 99, 372107

Abstract:

A vertical laser cavity includes a non-planar top mirror in order to improve the optical performance of the laser cavity. In one approach, the top mirror is curved to form a plano-concave geometry with the bottom mirror, as opposed to the typical plano—plano geometry. This can reduce diffraction losses and otherwise improve optical performance.

US Patent:

7057803, Jun 6, 2006

Filed:

Jun 30, 2004

Appl. No.:

10/882444

Inventors:

Richard P. Ratowsky - Berkeley CA, US
Ashish K. Verma - San Jose CA, US
Daniel A. Francis - Oakland CA, US

Assignee:

Finisar Corporation - Sunnyvale CA

International Classification:

H01S 3/00

US Classification:

359344

Abstract:

Systems and methods for extending a linear range of a semiconductor optical amplifier (SOA). A feedback layer is included in an SOA. The optical mode of the SOA is distributed between the feedback layer and the active region. As output optical power increases, the mode confinement of the active region increases and the mode is drawn from the feedback layer into the active region. The increase in the mode confinement offsets a loss of material gain such that the linear range of the SOA is extended. In one embodiment, the modal gain increases an higher output optical powers.

US Patent:

7099075, Aug 29, 2006

Filed:

Sep 3, 2004

Appl. No.:

10/934603

Inventors:

Richard P. Ratowsky - Berkeley CA, US
Daniel A. Francis - Oakland CA, US
Ashish K. Verma - San Jose CA, US

Assignee:

Finisar Corporation - Sunnyvale CA

International Classification:

H01S 3/00
H01S 5/125

US Classification:

359344, 372 5011

Abstract:

Systems and methods for tuning a DBR stack for an optical amplifier. The DBR layers in a mirror of the optical amplifier have a duty cycle that can be altered to tune a location of a channel drop in a gain spectrum. In addition to changing the duty cycle, the DBR stacks can be segmented. The segmented DBR stacks and/or the selected duty cycle tunes a location of a channel drop outside of a range of wavelengths of interest.

US Patent:

7445605, Nov 4, 2008

Filed:

Mar 30, 2006

Appl. No.:

11/394449

Inventors:

William Ryan Overall - Palo Alto CA, US
Daniel Francis - Los Altos CA, US
Aimee Brigitte Angel - Atherton CA, US
R. Hardwin Mead - Palo Alto CA, US

Assignee:

The Board of Trustees of the Leland Stanford Junior University - Palo Alto CA

International Classification:

A61B 5/103
A61B 5/02
A61N 1/00

US Classification:

600595, 600483, 600527, 600587, 607 17, 607 19

Abstract:

Systems, devices and methods for detecting and monitoring cardiac dysfunction. The devices include motion sensors for detecting signals representative of the total movement of the heart, and of the apex of the heart in particular.

US Patent:

7553690, Jun 30, 2009

Filed:

Jun 14, 2005

Appl. No.:

11/151929

Inventors:

Daniel Francis - Oakland CA, US
Rashit Nabiev - East Palo Alto CA, US
Richard P. Ratowsky - Berkeley CA, US
David Bruce Young - Oakland CA, US
Sunil Thomas - Mountain View CA, US
Roman Dimitrov - San Jose CA, US

Assignee:

Finisar Corporation - Sunnyvale CA

International Classification:

H01L 21/00

US Classification:

438 91, 438 93, 438 94, 438 57

Abstract:

This disclosure is concerned with starved source diffusion methods for forming avalanche photodiodes are provided for controlling an edge effect. In one example, a method for manufacturing an avalanche photodiode includes forming an absorber layer and an avalanche layer over a substrate. Next, a patterned mask defining one or more openings is formed over a surface of the avalanche layer. Finally, a dopant is deposited over the patterned mask and the avalanche layer such that the dopant is blocked by the patterned mask but diffuses into the avalanche layer in areas where the patterned mask defines an opening. The patterned mask is configured such that the depth to which the dopant diffuses into the avalanche layer varies so as to form a sloped diffusion front in the avalanche layer.