Daniel M Kerr

US Patent:

7633095, Dec 15, 2009

Filed:

Jun 17, 2008

Appl. No.:

12/140517

Inventors:

Daniel Charles Kerr - Oak Ridge NC, US
David C. Dening - Stokesdale NC, US
Julio Costa - Summerfield NC, US

Assignee:

RF Micro Devices, Inc. - Greensboro NC

International Classification:

H01L 29/74
H01L 29/423
H01L 29/45

US Classification:

257133, 257146, 257154, 257E27079, 257E29036, 257E29211, 257E29225

Abstract:

Integrating high-voltage devices with other circuitry, which may be fabricated on a semiconductor wafer using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage devices, such as switching transistors used in logic circuits, computer circuitry, and the like, or other high-voltage devices, such as a microelectromechanical system (MEMS) switch. The high-voltage devices may be used to create useful high-voltage circuits, such as level-shifting circuits, input protection circuits, charge pump circuits, switching circuits, latch circuits, latching switch circuits, interface circuits, any combination thereof, or the like. The high-voltage circuits may be controlled by the other circuitry.

US Patent:

7859009, Dec 28, 2010

Filed:

Jun 17, 2008

Appl. No.:

12/140504

Inventors:

Daniel Charles Kerr - Oak Ridge NC, US
David C. Dening - Stokesdale NC, US
Julio Costa - Summerfield NC, US

Assignee:

RF Micro Devices, Inc. - Greensboro NC

International Classification:

H01L 29/74

US Classification:

257107, 257104, 257105, 257106, 257122

Abstract:

The present invention relates to integration of lateral high-voltage devices, such as a lateral high-voltage diode (LHVD) or a lateral high-voltage thyristor, with other circuitry on a semiconductor wafer, which may be fabricated using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage devices, such as switching transistors used in logic circuits, computer circuitry, or the like, or other high-voltage devices, such as a microelectromechanical system (MEMS) switch. The reverse breakdown voltage capability of the LHVD may be increased by using an intrinsic material between the anode and the cathode. Similarly, in a lateral high-voltage thyristor, such as a lateral high-voltage Silicon-controlled rectifier (LHV-SCR), the withstand voltage capability of the LHV-SCR may be increased by using an intrinsic material between the anode and the cathode.

US Patent:

7868419, Jan 11, 2011

Filed:

Oct 20, 2008

Appl. No.:

12/254499

Inventors:

Daniel Charles Kerr - Oak Ridge NC, US
Thomas Gregory McKay - Boulder Creek CA, US
Michael Carroll - Jamestown NC, US
Joseph M. Gering - Stokesdale NC, US

Assignee:

RF Micro Devices, Inc. - Greensboro NC

International Classification:

H01L 27/08

US Classification:

257531, 257499

Abstract:

The present invention relates to using a trap-rich layer, such as a polycrystalline Silicon layer, over a semiconductor substrate to substantially immobilize a surface conduction layer at the surface of the semiconductor substrate at radio frequency (RF) frequencies. The trap-rich layer may have a high density of traps that trap carriers from the surface conduction layer. The average release time from the traps may be longer than the period of any present RF signals, thereby effectively immobilizing the surface conduction layer, which may substantially prevent capacitance and inductance changes due to the RF signals. Therefore, harmonic distortion of the RF signals may be significantly reduced or eliminated. The semiconductor substrate may be a Silicon substrate, a Gallium Arsenide substrate, or another substrate.

US Patent:

7915706, Mar 29, 2011

Filed:

Jul 8, 2008

Appl. No.:

12/169244

Inventors:

Daniel Charles Kerr - Oak Ridge NC, US
Thomas Gregory McKay - Boulder Creek CA, US
Michael Carroll - Jamestown NC, US
Joseph M. Gering - Stokesdale NC, US

Assignee:

RF Micro Devices, Inc. - Greensboro NC

International Classification:

H01L 27/06

US Classification:

257528, 257E27014

Abstract:

The present invention relates to using a potentially trap-rich layer, such as a polycrystalline Silicon layer, over a passivation region of a semiconductor substrate or a Silicon-on-insulator (SOI) device layer to substantially immobilize a surface conduction layer at the surface of the semiconductor substrate or SOI device layer at radio frequency (RF) frequencies. The potentially trap-rich layer may have a high density of traps that trap carriers from the surface conduction layer. The average release time from the traps may be longer than the period of any present RF signals, thereby effectively immobilizing the surface conduction layer, which may substantially prevent capacitance and inductance changes due to the RF signals. Therefore, harmonic distortion of the RF signals may be significantly reduced or eliminated. The semiconductor substrate may be a Silicon substrate, a Gallium Arsenide substrate, or another substrate.

US Patent:

7989889, Aug 2, 2011

Filed:

Jun 17, 2008

Appl. No.:

12/140491

Inventors:

Daniel Charles Kerr - Oak Ridge NC, US
David C. Dening - Stokesdale NC, US
Julio Costa - Summerfield NC, US

Assignee:

RF Micro Devices, Inc. - Greensboro NC

International Classification:

H01L 29/66

US Classification:

257339, 257E29012, 257335

Abstract:

The present invention relates to integration of a lateral high-voltage metal oxide semiconductor field effect transistor (LHV-MOSFET) with other circuitry on a semiconductor wafer, which may be fabricated using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage devices, such as switching transistors used in logic circuits, computer circuitry, and the like, or other high-voltage devices, such as a microelectromechanical system (MEMS) switch. The source to drain voltage capability of the LHV-MOSFET may be increased by using an intrinsic material between the source and the drain. The gate voltage capability of the LHV-MOSFET may be increased by using an insulator material, such as a thick oxide, between the gate and the channel of the LHV-MOSFET.

US Patent:

8049282, Nov 1, 2011

Filed:

Sep 21, 2006

Appl. No.:

11/533785

Inventors:

Mark Dyson - Singapore, SG
Daniel C. Kerr - Oak Ridge NC, US
Nace M. Rossi - Singapore, SG

Assignee:

Agere Systems Inc. - Allentown PA

International Classification:

H04Q 11/00

US Classification:

257370, 257E29174

Abstract:

The invention, in one aspect, provides a semiconductor device that includes a collector for a bipolar transistor located within a semiconductor substrate and a buried contact, at least a portion of which is located in the collector to a depth sufficient that adequately contacts the collector.

US Patent:

8076750, Dec 13, 2011

Filed:

Dec 2, 2010

Appl. No.:

12/958494

Inventors:

Daniel Charles Kerr - Oak Ridge NC, US
Thomas Gregory McKay - Boulder Creek CA, US
Michael Carroll - Jamestown NC, US
Joseph M. Gering - Stokesdale NC, US

Assignee:

RF Micro Devices, Inc. - Greensboro NC

International Classification:

H01L 29/00

US Classification:

257528, 257531, 438381, 438763

Abstract:

The present invention relates to using a trap-rich layer, such as a polycrystalline Silicon layer, over a semiconductor substrate to substantially immobilize a surface conduction layer at the surface of the semiconductor substrate at radio frequency (RF) frequencies. The trap-rich layer may have a high density of traps that trap carriers from the surface conduction layer. The average release time from the traps may be longer than the period of any present RF signals, thereby effectively immobilizing the surface conduction layer, which may substantially prevent capacitance and inductance changes due to the RF signals. Therefore, harmonic distortion of the RF signals may be significantly reduced or eliminated. The semiconductor substrate may be a Silicon substrate, a Gallium Arsenide substrate, or another substrate.

US Patent:

8164110, Apr 24, 2012

Filed:

Nov 18, 2010

Appl. No.:

12/949296

Inventors:

Daniel Charles Kerr - Oak Ridge NC, US
David C. Dening - Stokesdale NC, US
Julio Costa - Summerfield NC, US

Assignee:

RF Micro Devices, Inc. - Greensboro NC

International Classification:

H01L 29/74

US Classification:

257107, 257104, 257105, 257106, 257122, 257133, 257146, 257154, 257E27079

Abstract:

The present invention relates to integration of lateral high-voltage devices, such as a lateral high-voltage diode (LHVD) or a lateral high-voltage thyristor, with other circuitry on a semiconductor wafer, which may be fabricated using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage devices, such as switching transistors used in logic circuits, computer circuitry, or the like, or other high-voltage devices, such as a microelectromechanical system (MEMS) switch. The reverse breakdown voltage capability of the LHVD may be increased by using an intrinsic material between the anode and the cathode. Similarly, in a lateral high-voltage thyristor, such as a lateral high-voltage Silicon-controlled rectifier (LHV-SCR), the withstand voltage capability of the LHV-SCR may be increased by using an intrinsic material between the anode and the cathode.