Daniel G Laird

US Patent:

56630182, Sep 2, 1997

Filed:

May 28, 1996

Appl. No.:

8/654457

Inventors:

Kevin D. Cummings - Phoenix AZ
William A. Johnson - Paradise Valley AZ
Daniel L. Laird - Madison WI

Assignee:

Motorola - Schaumburg IL

International Classification:

G03F 900

US Classification:

430 5

Abstract:

A pattern writing method for X-ray mask fabrication including forming a uniform membrane layer on an X-ray absorbing layer and forming an etch mask on the layer of X-ray absorbing material including the steps of providing a layer of material sensitive to radiation. The layer of material has internal stresses which are altered by exposure to the radiation. The material is exposed in associated areas (e. g. a spiral) such that the internal stresses within the layer of material and altered internal stresses in the associated areas are substantially offset to reduce distortion in the X-ray mask.