Daniel D Reinhardt

US Patent:

7615850, Nov 10, 2009

Filed:

Apr 16, 2008

Appl. No.:

12/104103

Inventors:

Rehan Choudhary - Poughkeepsie NY, US
Benjamin V. Fasano - New Windsor NY, US
Sushumna Iruvanti - Wappingers Falls NY, US
Daniel D. Reinhardt - Hinesburg VT, US
Deborah A. Sylvester - Poughkeepsie NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 23/556

US Classification:

257660, 257778, 257E23115, 257E23193

Abstract:

A method and device comprising an easily reworkable alpha particle barrier is provided. The easily reworkable alpha particle barrier is applied in the space between the surface of the chip and the surface of the substrate, and reduces soft error rate (SER). Further, the easily reworkable alpha particle barrier material is chosen from the group of an organic material, a hydrocarbon, more specifically a polyalphaolefin (PAO) oil, and a polymer or filled polymer; wherein the polyalphaolefin oil has a viscosity below 1000 cSt (at 100 C. ). The easily reworkable alpha particle barrier material can be used with multichip modules (MCM's) allowing easy device rework of one or more dies without affecting other dies on the same substrate.

US Patent:

20070212820, Sep 13, 2007

Filed:

Mar 9, 2006

Appl. No.:

11/308167

Inventors:

Rehan Choudhary - Poughkeepsie NY, US
Benjamin Fasano - New Windsor NY, US
Sushumna Iruvanti - Wappingers Falls NY, US
Daniel Reinhardt - Hinesburg VT, US
Deborah Sylvester - Poughkeepsie NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/00

US Classification:

438118000

Abstract:

A method and device comprising an easily reworkable alpha particle barrier is provided. The easily reworkable alpha particle barrier is applied in the space between the surface of the chip and the surface of the substrate, and reduces soft error rate (SER). Further, the easily reworkable alpha particle barrier material is chosen from the group of an organic material, a hydrocarbon, more specifically a polyalphaolefin (PAO) oil, and a polymer or filled polymer; wherein the polyalphaolefin oil has a viscosity below 1000 cSt (at 100 C.). The easily reworkable alpha particle barrier material can be used with multichip modules (MCM's) allowing easy device rework of one or more dies without affecting other dies on the same substrate.

US Patent:

20170023640, Jan 26, 2017

Filed:

Oct 4, 2016

Appl. No.:

15/284570

Inventors:

- Armonk NY, US
Douglas S. Dewey - Highgate VT, US
Nazmul Habib - South Burlington VT, US
Daniel D. Reinhardt - Milton VT, US

International Classification:

G01R 31/28

Abstract:

A method for applying stress conditions to integrated circuit device samples during accelerated stress testing may include partitioning each of the integrated circuit device samples into a first region having a first functional element, partitioning each of the integrated circuit device samples into at least one second region having at least one second functional element, applying a first stress condition to the first region having the first element, applying a second stress condition to the at least one second region having the at least one second element, determining a first portion of the integrated circuit device samples that functionally failed based on the first stress condition, and determining a second portion of the integrated circuit device samples that functionally failed based on the second stress condition. An acceleration model parameter is derived based on the determining of the first and second portion of the integrated circuit samples that functionally failed.

US Patent:

20170023924, Jan 26, 2017

Filed:

Oct 10, 2016

Appl. No.:

15/289215

Inventors:

- Armonk NY, US
Douglas S. Dewey - Highgate VT, US
Nazmul Habib - South Burlington VT, US
Daniel D. Reinhardt - Milton VT, US

International Classification:

G05B 19/042
G05B 17/02

Abstract:

A method for applying stress conditions to integrated circuit device samples during accelerated stress testing may include partitioning each of the integrated circuit device samples into a first region having a first functional element, partitioning each of the integrated circuit device samples into at least one second region having at least one second functional element, applying a first stress condition to the first region having the first element, applying a second stress condition to the at least one second region having the at least one second element, determining a first portion of the integrated circuit device samples that functionally failed based on the first stress condition, and determining a second portion of the integrated circuit device samples that functionally failed based on the second stress condition. An acceleration model parameter is derived based on the determining of the first and second portion of the integrated circuit samples that functionally failed.

US Patent:

20150253376, Sep 10, 2015

Filed:

Mar 4, 2014

Appl. No.:

14/196009

Inventors:

- Armonk NY, US
Douglas S. Dewey - Highgate VT, US
Nazmul Habib - South Burlington VT, US
Daniel D. Reinhardt - Milton VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G01R 31/27
G01R 31/28

Abstract:

A method for applying stress conditions to integrated circuit device samples during accelerated stress testing may include partitioning each of the integrated circuit device samples into a first region having a first functional element, partitioning each of the integrated circuit device samples into at least one second region having at least one second functional element, applying a first stress condition to the first region having the first element, applying a second stress condition to the at least one second region having the at least one second element, determining a first portion of the integrated circuit device samples that functionally failed based on the first stress condition, and determining a second portion of the integrated circuit device samples that functionally failed based on the second stress condition. An acceleration model parameter is derived based on the determining of the first and second portion of the integrated circuit samples that functionally failed.