Daniel S Wilt

US Patent:

6368888, Apr 9, 2002

Filed:

Feb 19, 1999

Appl. No.:

09/252724

Inventors:

William Baxter Joyce - Basking Ridge NJ
Daniel Paul Wilt - Orefield PA

Assignee:

Agere Systems Guardian Corp. - Orlando FL

International Classification:

H01C 2100

US Classification:

438 22, 438 27, 438 29, 438118, 438122

Abstract:

The invention is an assembly and method for bonding an optical component to a base member. The component is mounted to a block which includes a centerline extending between two opposing surfaces. A pair of stop members are included on the surface of the base member, and these members serve to pin the centerline during heating and cooling of the assembly so that the position of the component is controlled.

US Patent:

6477194, Nov 5, 2002

Filed:

Nov 15, 1999

Appl. No.:

09/437424

Inventors:

Lars E. Eng - Fogelsville PA
Ram Jambunathan - Allentown PA
Kishore K. Kamath - Whitehall PA
Alexander Robertson - Lawrenceville NJ
Daniel Paul Wilt - Orefield PA

Assignee:

Agere Systems Guardian Corp. - Orlando FL

International Classification:

H01S 308

US Classification:

372 96, 372 45

Abstract:

A low threshold distributed feedback (DFB) laser is constructed for improved performance at subzero temperatures. A loss grating is employed to enhance the probability that lasing occurs near the short wavelength side of the stopband and to counteract the effect of negative gain tilt that occurs when DFB lasers are positively detuned. A method of making DFB lasers from wafers with improved yield for low temperature side mode suppression ratio (SMSR) is also disclosed.

US Patent:

6678301, Jan 13, 2004

Filed:

Jul 14, 2000

Appl. No.:

09/616537

Inventors:

Lars E. Eng - Upper Macungie PA
Robert Louis Hartman - Warren Township, Somerset County NJ
Gleb E. Shtengel - Upper Milford Township, Lehigh County PA
Daniel Paul Wilt - Orefield PA

Assignee:

TriQuint Technology Holding Co. - Hillsboro OR

International Classification:

H01S 319

US Classification:

372 50, 372 43, 372 44

Abstract:

An improved semiconductor laser (distributed feedback or Bragg reflector laser) is disclosed, having reducing wavelength chirping. In a laser having a substrate, an optical waveguide layer disposed on the substrate with a grating region, and a cladding region disposed on the optical waveguide layer, an isolation region is positioned in at least one of the substrate, optical waveguide layer, and cladding layer. The isolation region is comprised of a material adapted to increase the resistivity of the one or more layers in which it is placed to reduce electrical cross-talk and wavelength chirping. Preferably, the isolation region is positioned in at least the cladding layer, which the inventors have found is the greatest contributor of cross-talk and wavelength chirping.

US Patent:

6828166, Dec 7, 2004

Filed:

Sep 6, 2002

Appl. No.:

10/235714

Inventors:

Lars E. Eng - Fogelsville PA
Ram Jambunathan - Allentown PA
Kishore K. Kamath - Whitehall PA
Alexander Robertson - Lawrenceville NJ
Daniel Paul Wilt - Orefield PA

Assignee:

Agere Systems, Inc. - Allentown PA

International Classification:

H01L 2100

US Classification:

438 22, 438 32, 438 48

Abstract:

A low threshold distributed feedback (DFB) laser is constructed for improved performance at subzero temperatures. A loss grating is employed to enhance the probability that lasing occurs near the short wavelength side of the stopband and to counteract the effect of negative gain tilt that occurs when DFB lasers are positively detuned. A method of making DFB lasers from wafers with improved yield for low temperature side mode suppression ratio (SMSR) is also disclosed.

US Patent:

46602089, Apr 21, 1987

Filed:

Jun 15, 1984

Appl. No.:

6/621071

Inventors:

Wilbur D. Johnston - Mendham NJ
Judith A. Long - Millburn NJ
Daniel P. Wilt - Scotch Plains NJ

Assignee:

American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01S 319

US Classification:

372 46

Abstract:

High resistivity Fe-doped InP-based MOCVD layers are used to constrain current to flow through the active region of a variety of devices such as CSBH and DCPBH lasers.

US Patent:

45954542, Jun 17, 1986

Filed:

Jun 15, 1984

Appl. No.:

6/621080

Inventors:

William C. Dautremont-Smith - Westfield NJ
Daniel P. Wilt - Scotch Plains NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 21306
B44C 122
C03C 1500
C03C 2506

US Classification:

156647

Abstract:

V-grooves are etched in Group III-V compound semiconductors using a composite mask comprising a thin native oxide layer on the semiconductor and a dielectric etch mask on the native oxide. Described in detail is the application of this technique to etching V-grooves in InP for the fabrication of CSBH InP/InGaAsP lasers.

US Patent:

59600179, Sep 28, 1999

Filed:

Oct 10, 1997

Appl. No.:

8/948695

Inventors:

William Baxter Joyce - Basking Ridge NJ
Daniel Paul Wilt - Orefield PA

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

H01S 318
H01S 304

US Classification:

372 43

Abstract:

The invention is an assembly and method for bonding an optical component to a base member. The component is mounted to a block which includes a centerline extending between two opposing surfaces. A pair of stop members are included on the surface of the base member, and these members serve to pin the centerline during heating and cooling of the assembly so that the position of the component is controlled.

US Patent:

48051780, Feb 14, 1989

Filed:

Mar 28, 1986

Appl. No.:

6/845603

Inventors:

Daniel P. Wilt - Scotch Plains NJ

Assignee:

American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01S 319

US Classification:

372 46

Abstract:

The integrity of surface structural features (e. g. , distributed feedback gratings) in Group III-V compound semiconductors are preserved during heating (e. g. , subsequent LPE regrowth) by a thin coating containing a transition metal (e. g. , Os, Ru and Rh). DFB-DCPBH InP/InGaAsP single frequency lasers made in this way are also described.