Daniel X Xu

age ~44

from Foster City, CA

Also known as:
  • Dan Xu
  • David Xu

Daniel Xu Phones & Addresses

  • Foster City, CA
  • Millbrae, CA
  • San Francisco, CA
  • 21010 Sherman Dr, Castro Valley, CA 94552 • 5108889627
  • Mountain View, CA
  • Menlo Park, CA
  • Durham, NC
  • Berkeley, CA
  • Havana, IL

Work

  • Company:
    International air transport association
    Apr 2012
  • Position:
    Assistant manager, e-services project (industry standards implementation)

Education

  • School / High School:
    Webster University- Genve, GE
    2010
  • Specialities:
    Master of Arts in International Relations

Ranks

  • Licence:
    California - Active
  • Date:
    2005

Us Patents

  • Compositionally Modified Resistive Electrode

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  • US Patent:
    6404665, Jun 11, 2002
  • Filed:
    Sep 29, 2000
  • Appl. No.:
    09/675803
  • Inventors:
    Tyler A. Lowrey - San Jose CA
    Daniel Xu - Mountain View CA
    Chien Chiang - Fremont CA
    Patrick J. Neschleba - San Carlos CA
  • Assignee:
    Intel Corporation - Santa Clara CA
  • International Classification:
    G11C 1100
  • US Classification:
    365100, 365148, 365163, 257 3, 257 4, 257 5
  • Abstract:
    An apparatus comprising a volume of memory material and a pair of spacedly disposed conductors. An electrode coupled to the volume of memory material and disposed between the volume of memory material and one conductor comprises a first material having a first resistivity value and a second material having a different second resistivity value formed by exposing the first material to a gaseous ambient.
  • Dual Trench Isolation For A Phase-Change Memory Cell And Method Of Making Same

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  • US Patent:
    6437383, Aug 20, 2002
  • Filed:
    Dec 21, 2000
  • Appl. No.:
    09/745322
  • Inventors:
    Daniel Xu - Mountain View CA
  • Assignee:
    Intel Corporation - Santa Clara CA
  • International Classification:
    H01L 2972
  • US Classification:
    257300, 257 2, 257110, 257121, 257124, 257192, 257246, 257295, 257296, 257350
  • Abstract:
    The invention relates to a phase-change memory device. The device includes a double-trench isolation structure around the diode stack that communicates to the lower electrode. The present invention also relates to a method of making a phase-change memory device. The method includes forming two orthogonal and intersecting isolation trenches around a memory cell structure diode stack.
  • Biasing Scheme Of Floating Unselected Wordlines And Bitlines Of A Diode-Based Memory Array

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  • US Patent:
    6462984, Oct 8, 2002
  • Filed:
    Jun 29, 2001
  • Appl. No.:
    09/895599
  • Inventors:
    Daniel Xu - Mountain View CA
    Tyler A. Lowrey - San Jose CA
    David L. Kencke - Portland OR
  • Assignee:
    Intel Corporation - Santa Clara CA
  • International Classification:
    G11C 1136
  • US Classification:
    365175, 365174, 365163, 365148, 365203, 3652257, 365 51
  • Abstract:
    An integrated circuit (IC) has a number of memory cells, each of which has a diode structure coupled between a bitline and a wordline that are selected when programming that cell. A target memory cell of the IC is programmed while simultaneously floating a number of unselected bitlines and wordlines in the IC.
  • Carbon-Containing Interfacial Layer For Phase-Change Memory

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  • US Patent:
    6566700, May 20, 2003
  • Filed:
    Oct 11, 2001
  • Appl. No.:
    09/975272
  • Inventors:
    Daniel Xu - Mountain View CA
  • Assignee:
    Ovonyx, Inc. - Boise ID
  • International Classification:
    H01L 27108
  • US Classification:
    257296, 257 4, 257 77, 257614, 257734
  • Abstract:
    A phase-change memory cell may be formed with a carbon-containing interfacial layer that heats a phase-change material. By forming the phase-change material in contact, in one embodiment, with the carbon containing interfacial layer, the amount of heat that may be applied to the phase-change material, at a given current and temperature, may be increased. In some embodiments, the performance of the interfacial layer at high temperatures may be improved by using a wide band gap semiconductor material such as silicon carbide.
  • Trench Sidewall Profile For Device Isolation

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  • US Patent:
    6514805, Feb 4, 2003
  • Filed:
    Jun 30, 2001
  • Appl. No.:
    09/896532
  • Inventors:
    Daniel Xu - Mountain View CA
    Erman Bengu - San Jose CA
    Ming Jin - San Jose CA
  • Assignee:
    Intel Corporation - Santa Clara CA
  • International Classification:
    H01L 2100
  • US Classification:
    438164, 438405, 438427, 438703
  • Abstract:
    A method comprising forming a first trench in a substrate, and forming a second trench in the substrate, the second trench intersecting the first trench and having a retrograde sidewall profile relative to a direction from a top of the trench to a bottom of the trench. An apparatus comprising a matrix of cells in a substrate formed by a plurality of first trenches and a plurality of second trenches, the plurality of second trenches intersecting the plurality of first trenches and having a retrograde sidewall profile relative to a direction from a top to a bottom of the respective trench; and an electrically accessible storage device coupled to respective ones of the matrix of cells.
  • Compositionally Modified Resistive Electrode

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  • US Patent:
    6563164, May 13, 2003
  • Filed:
    Feb 8, 2001
  • Appl. No.:
    09/780805
  • Inventors:
    Tyler A. Lowrey - San Jose CA
    Daniel Xu - Mountain View CA
    Chien Chiang - Fremont CA
    Patrick J. Neschleba - San Carlos CA
  • Assignee:
    Ovonyx, Inc. - Boise ID
  • International Classification:
    H01L 4700
  • US Classification:
    257314, 257 5
  • Abstract:
    An apparatus comprising a volume of memory material and a pair of spacedly disposed conductors. An electrode coupled to the volume of memory material and disposed between the volume of memory material and one conductor comprises a first material having a first resistivity value and a second material having a different second resistivity value formed by exposing the first material to a gaseous ambient.
  • Barrier Material Encapsulation Of Programmable Material

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  • US Patent:
    6642102, Nov 4, 2003
  • Filed:
    Jun 30, 2001
  • Appl. No.:
    09/896530
  • Inventors:
    Daniel Xu - Mountain View CA
  • Assignee:
    Intel Corporation - Santa Clara CA
  • International Classification:
    H01L 21336
  • US Classification:
    438257, 438396, 438 95, 438470, 438128, 257 3, 257530, 257621
  • Abstract:
    A method comprising forming as stacked materials on a substrate, a volume of programmable material and a signal line, conformably forming a first dielectric material on the stacked materials, forming a second dielectric material on the first material, etching an opening in the second dielectric material with an etchant that, between the first dielectric material and the second dielectric material, favors removal of the second dielectric material, and forming a contact in the opening to the stacked materials. An apparatus comprising a contact point formed on a substrate, a volume of programmable material formed on the contact point, a signal line formed on the volume of programmable material, a first dielectric material conformally formed on the signal line, a different second dielectric material formed on the first dielectric material, and a contact formed through the first dielectric material and the second dielectric material to the signal line.
  • Method And Apparatus To Operate A Memory Cell

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  • US Patent:
    6667900, Dec 23, 2003
  • Filed:
    Dec 28, 2001
  • Appl. No.:
    10/034331
  • Inventors:
    Tyler Lowrey - San Jose CA
    Daniel Xu - Mountain View CA
  • Assignee:
    Ovonyx, Inc. - Boise ID
  • International Classification:
    G11C 1115
  • US Classification:
    365171, 365173
  • Abstract:
    Briefly, in accordance with an embodiment of the invention, a method and an apparatus to read a phase change memory is provided, wherein the method includes zero biasing unselected memory cells during reading of a selected memory cell.

Lawyers & Attorneys

Daniel Xu Photo 1

Daniel X. Xu - Lawyer

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Licenses:
California - Active 2005
Experience:
Associate at Morrison & Foerster - 2007-2008
Associate at Wilson Sonsini Goodrich & Rosati - 2005-2007
Education:
UCLA
Degree - MS - Master of Science - Biomedical Engineering
Graduated - 2012
Duke University School of Law
Degree - JD - Juris Doctor - Law
Graduated - 2005
University of California - Berkeley
Degree - BA - Bachelor of Arts
Graduated - 2002
Specialties:
Patent Application - 90%, years
Trademark Application - 5%, years
Intellectual Property - 3%, years
Corporate / Incorporation - 1%, years
Securities / Investment Fraud - 1%, years
Languages:
Mandarin
Daniel Xu Photo 2

Daniel Xin Xu, Castro Valley CA - Lawyer

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Office:
21010 Sherman Dr., Castro Valley, CA
ISLN:
918649605
Admitted:
2005
University:
University of California at Berkeley, B.A.
Law School:
Duke University, J.D.

Resumes

Daniel Xu Photo 3

Magazine Editor, Business Now Magazine, Amcham China

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Position:
Magazine Editor at American Chamber of Commerce in China
Location:
Beijing City, China
Industry:
Online Media
Work:
American Chamber of Commerce in China - Beijing, China since Jul 2012
Magazine Editor

China Internet Information Center Jul 2011 - Jul 2012
News Editor

Home Media Magazine May 2010 - Mar 2011
Contributor

Daily Titan, CSU Fullerton Jul 2008 - Dec 2008
Staff Writer

Excelock Ltd Aug 2005 - Apr 2007
Technical Writer
Education:
Cal State Fullerton 2007 - 2010
Bachelor, Journalism
Skills:
Copy Editing
News Writing
Interviews
Ap Style
Online Journalism
Journalism
Newspaper
Editing
Copywriting
Wordpress
Feature Articles
Fact-checking
Languages:
Chinese
Daniel Xu Photo 4

Patent Attorney

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Location:
893 Carina Ln, Foster City, CA 94404
Industry:
Law Practice
Work:
Intellectual Property Investment Law Group Dec 2013 - Apr 2015
Patent Attorney

Levine Bagade Han Llp Dec 2013 - Apr 2015
Patent Attorney

Uc Berkeley Dec 2013 - Apr 2015
Adjust Faculty

Morrison & Foerster Llp Aug 2007 - Sep 2008
Attorney

Wilson Sonsini Goodrich & Rosati Aug 2005 - Aug 2007
Attorney
Education:
University of California, Los Angeles 2011 - 2012
Master of Science, Masters, Biomedical Engineering
Duke University School of Law 2002 - 2005
Doctor of Jurisprudence, Doctorates, Law
University of California, Berkeley 1998 - 2002
Bachelors, Bachelor of Arts
Skills:
Intellectual Property
Patents
Patent Litigation
Licensing
Patent Prosecution
Prosecution
Trade Secrets
Trademark Infringement
Copyright Law
Trademarks
Client Counseling
Patentability
Patent Applications
Medical Devices
Legal Opinions
Registered Patent Attorney
Design Patents
Software Patents
Patentability Searches
Intellectual Property Infringement
Legal Research
Patent Law
Languages:
English
Certifications:
Uspto Registration 69,329
Daniel Xu Photo 5

Daniel Xu

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Daniel Xu

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Location:
United States
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Daniel Xu

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Location:
United States
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Daniel Xu

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Location:
United States
Daniel Xu Photo 9

Junior Staff Accountant At Episcopal Community Services Of San Francisco

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Location:
San Francisco Bay Area
Industry:
Accounting
Daniel Xu Photo 10

Daniel Xu

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Location:
San Francisco Bay Area
Industry:
Law Practice

Flickr

Youtube

Daniel Xu

Amazing Chinese Kid Ultimate Piano Master. Its true what they say no m...

  • Category:
    Music
  • Uploaded:
    08 Nov, 2007
  • Duration:
    51s

Kabalevsky Sonatina Op 13 No 1 by Daniel Xu

Daniel is 11 years old. He started to play piano when he was 8 years o...

  • Category:
    Entertainment
  • Uploaded:
    27 Jan, 2008
  • Duration:
    2m 17s

Daniel Xu - Chopin Nocturnes Op55 No1 part two

part two

  • Category:
    Entertainment
  • Uploaded:
    14 Jan, 2008
  • Duration:
    1m 28s

Daniel xu-Chopin Waltz in A minor, posthumous

Chopin Waltz in A minor, posthumous

  • Category:
    Entertainment
  • Uploaded:
    14 Jan, 2008
  • Duration:
    1m 33s

Kabalevsky Concerto op.50 MVT.1, performed by...

Student of The Main Line Conservatory of Music, Daniel Xu, Kabalevsky ...

  • Category:
    Music
  • Uploaded:
    22 Sep, 2009
  • Duration:
    7m 30s

Daniel Xu Steinway Hall 2011

  • Category:
    Music
  • Uploaded:
    07 Mar, 2011
  • Duration:
    17m 30s

Myspace

Daniel Xu Photo 19

Daniel xu

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Locality:
some where you'll never find me, London and South East
Gender:
Male
Birthday:
1953
Daniel Xu Photo 20

Daniel Xu

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Locality:
Puerto Rico
Gender:
Male
Birthday:
1949

Facebook

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Daniel Xu

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Daniel Xu

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Daniel Xu Photo 23

Daniel Xin Xu

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Daniel Xu Photo 24

Dan Daniel Xu

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Daniel Xu Photo 25

Daniel S Xu

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Daniel Xu

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Daniel Xu

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Daniel Xu

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Googleplus

Daniel Xu Photo 29

Daniel Xu

Work:
Eagles Communications - Conference Manager (2010)
Singapore Armed Forces - Signal Specialist (2004-2010)
Education:
Montfort Primary, Montfort Secondary, Catholic Junior College, Singapore Polytechnic
About:
Daniel Xu Yan Jun.. you know me? i guess so.. if not you wouldn't have clicked on my profile in the first place. Or were you checking me out? ha. i guess not..
Bragging Rights:
I have flexible fingers.. -_-"
Daniel Xu Photo 30

Daniel Xu

Work:
IBM
Daniel Xu Photo 31

Daniel Xu

Education:
Princeton University
Daniel Xu Photo 32

Daniel Xu

Daniel Xu Photo 33

Daniel Xu

Education:
California State University, Fullerton
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Daniel Xu

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Daniel Xu

Daniel Xu Photo 36

Daniel Xu

Plaxo

Daniel Xu Photo 37

Daniel Xu

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SuzhouME at MSA
Daniel Xu Photo 38

Daniel Xu

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Travel Professionals Shanghai

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