Tyler A. Lowrey - San Jose CA Daniel Xu - Mountain View CA Chien Chiang - Fremont CA Patrick J. Neschleba - San Carlos CA
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
G11C 1100
US Classification:
365100, 365148, 365163, 257 3, 257 4, 257 5
Abstract:
An apparatus comprising a volume of memory material and a pair of spacedly disposed conductors. An electrode coupled to the volume of memory material and disposed between the volume of memory material and one conductor comprises a first material having a first resistivity value and a second material having a different second resistivity value formed by exposing the first material to a gaseous ambient.
Dual Trench Isolation For A Phase-Change Memory Cell And Method Of Making Same
The invention relates to a phase-change memory device. The device includes a double-trench isolation structure around the diode stack that communicates to the lower electrode. The present invention also relates to a method of making a phase-change memory device. The method includes forming two orthogonal and intersecting isolation trenches around a memory cell structure diode stack.
Biasing Scheme Of Floating Unselected Wordlines And Bitlines Of A Diode-Based Memory Array
An integrated circuit (IC) has a number of memory cells, each of which has a diode structure coupled between a bitline and a wordline that are selected when programming that cell. A target memory cell of the IC is programmed while simultaneously floating a number of unselected bitlines and wordlines in the IC.
Carbon-Containing Interfacial Layer For Phase-Change Memory
A phase-change memory cell may be formed with a carbon-containing interfacial layer that heats a phase-change material. By forming the phase-change material in contact, in one embodiment, with the carbon containing interfacial layer, the amount of heat that may be applied to the phase-change material, at a given current and temperature, may be increased. In some embodiments, the performance of the interfacial layer at high temperatures may be improved by using a wide band gap semiconductor material such as silicon carbide.
Daniel Xu - Mountain View CA Erman Bengu - San Jose CA Ming Jin - San Jose CA
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L 2100
US Classification:
438164, 438405, 438427, 438703
Abstract:
A method comprising forming a first trench in a substrate, and forming a second trench in the substrate, the second trench intersecting the first trench and having a retrograde sidewall profile relative to a direction from a top of the trench to a bottom of the trench. An apparatus comprising a matrix of cells in a substrate formed by a plurality of first trenches and a plurality of second trenches, the plurality of second trenches intersecting the plurality of first trenches and having a retrograde sidewall profile relative to a direction from a top to a bottom of the respective trench; and an electrically accessible storage device coupled to respective ones of the matrix of cells.
Tyler A. Lowrey - San Jose CA Daniel Xu - Mountain View CA Chien Chiang - Fremont CA Patrick J. Neschleba - San Carlos CA
Assignee:
Ovonyx, Inc. - Boise ID
International Classification:
H01L 4700
US Classification:
257314, 257 5
Abstract:
An apparatus comprising a volume of memory material and a pair of spacedly disposed conductors. An electrode coupled to the volume of memory material and disposed between the volume of memory material and one conductor comprises a first material having a first resistivity value and a second material having a different second resistivity value formed by exposing the first material to a gaseous ambient.
Barrier Material Encapsulation Of Programmable Material
A method comprising forming as stacked materials on a substrate, a volume of programmable material and a signal line, conformably forming a first dielectric material on the stacked materials, forming a second dielectric material on the first material, etching an opening in the second dielectric material with an etchant that, between the first dielectric material and the second dielectric material, favors removal of the second dielectric material, and forming a contact in the opening to the stacked materials. An apparatus comprising a contact point formed on a substrate, a volume of programmable material formed on the contact point, a signal line formed on the volume of programmable material, a first dielectric material conformally formed on the signal line, a different second dielectric material formed on the first dielectric material, and a contact formed through the first dielectric material and the second dielectric material to the signal line.
Tyler Lowrey - San Jose CA Daniel Xu - Mountain View CA
Assignee:
Ovonyx, Inc. - Boise ID
International Classification:
G11C 1115
US Classification:
365171, 365173
Abstract:
Briefly, in accordance with an embodiment of the invention, a method and an apparatus to read a phase change memory is provided, wherein the method includes zero biasing unselected memory cells during reading of a selected memory cell.
Associate at Morrison & Foerster - 2007-2008 Associate at Wilson Sonsini Goodrich & Rosati - 2005-2007
Education:
UCLA Degree - MS - Master of Science - Biomedical Engineering Graduated - 2012 Duke University School of Law Degree - JD - Juris Doctor - Law Graduated - 2005 University of California - Berkeley Degree - BA - Bachelor of Arts Graduated - 2002
Specialties:
Patent Application - 90%, years Trademark Application - 5%, years Intellectual Property - 3%, years Corporate / Incorporation - 1%, years Securities / Investment Fraud - 1%, years
Magazine Editor at American Chamber of Commerce in China
Location:
Beijing City, China
Industry:
Online Media
Work:
American Chamber of Commerce in China - Beijing, China since Jul 2012
Magazine Editor
China Internet Information Center Jul 2011 - Jul 2012
News Editor
Home Media Magazine May 2010 - Mar 2011
Contributor
Daily Titan, CSU Fullerton Jul 2008 - Dec 2008
Staff Writer
Excelock Ltd Aug 2005 - Apr 2007
Technical Writer
Education:
Cal State Fullerton 2007 - 2010
Bachelor, Journalism
Intellectual Property Investment Law Group Dec 2013 - Apr 2015
Patent Attorney
Levine Bagade Han Llp Dec 2013 - Apr 2015
Patent Attorney
Uc Berkeley Dec 2013 - Apr 2015
Adjust Faculty
Morrison & Foerster Llp Aug 2007 - Sep 2008
Attorney
Wilson Sonsini Goodrich & Rosati Aug 2005 - Aug 2007
Attorney
Education:
University of California, Los Angeles 2011 - 2012
Master of Science, Masters, Biomedical Engineering
Duke University School of Law 2002 - 2005
Doctor of Jurisprudence, Doctorates, Law
University of California, Berkeley 1998 - 2002
Bachelors, Bachelor of Arts
Daniel Xu Yan Jun.. you know me? i guess so.. if not you wouldn't have clicked on my profile in the first place. Or were you checking me out? ha. i guess not..