Darrell L Thomas

US Patent:

6355541, Mar 12, 2002

Filed:

Apr 21, 1999

Appl. No.:

09/296143

Inventors:

Orin Wayne Holland - Lenoir City TN
Darrell Keith Thomas - Kingston TN
Richard Bayne Gregory - Phoenix AZ
Syd Robert Wilson - Phoenix AZ
Thomas Allen Wetteroth - Chandler AZ

Assignee:

Lockheed Martin Energy Research Corporation - Oakridge TN
Motorola, Inc. - Tempe AZ

International Classification:

H01L 2146

US Classification:

438459

Abstract:

Systems and methods are described for transfer of a thin-film via implantation, wafer bonding, and separation. A method for transfer of a thin-film, includes: implanting a source crystal with ions along a crystallographic channel and at a temperature of at least approximately 200Â C. to i) form a strained region and ii) define the thin-film; then bonding a surface of the thin-film to a target wafer; and then separating a) the target wafer and the thin-film from b) a remainder of the source crystal along the strained region. The systems and methods provide advantages because the electrical carriers in the crystal, and consequently the thin-film, are not deactivated and the quality of the transferred thin-film is improved.

US Patent:

56610440, Aug 26, 1997

Filed:

Jun 15, 1995

Appl. No.:

8/490658

Inventors:

Orin Wayne Holland - Oak Ridge TN
Darrell Keith Thomas - Kingston TN
Dashun Zhou - Sunnyvale CA

Assignee:

Lockheed Martin Energy Systems, Inc. - Oak Ridge TN

International Classification:

H01L 21265

US Classification:

438766

Abstract:

A method for preparing a silicon-on-insulator material having a relatively defect-free Si overlayer involves the implanting of oxygen ions within a silicon body and the interruption of the oxygen-implanting step to implant Si ions within the silicon body. The implanting of the oxygen ions develops an oxide layer beneath the surface of the silicon body, and the Si ions introduced by the Si ion-implanting step relieves strain which is developed in the Si overlayer during the implanting step without the need for any intervening annealing step. By relieving the strain in this manner, the likelihood of the formation of strain-induced defects in the Si overlayer is reduced. In addition, the method can be carried out at lower processing temperatures than have heretofore been used with SIMOX processes of the prior art. The principles of the invention can also be used to relieve negative strain which has been induced in a silicon body of relatively ordered lattice structure.