Darren P Taylor

US Patent:

20050026053, Feb 3, 2005

Filed:

Sep 8, 2004

Appl. No.:

10/936026

Inventors:

Patrick Martin - Dallas TX, US
Matthew Lassiter - McKinney TX, US
Darren Taylor - The Colony TX, US
Michael Cangemi - McKinney TX, US
Eric Poortinga - Austin TX, US

International Classification:

B32B009/00
B32B015/00
B32B017/06
G03F009/00

US Classification:

430005000, 428428000, 428432000

Abstract:

The present invention generally relates to optical lithography and more particularly relates to the fabrication of transparent or semitransparent phase shifting masks used in the manufacture of semiconductor devices. In particular, the present invention utilizes an internal etch stop layer and either a deposited substantially transparent layer, deposited partially transparent layer or deposited opaque thereon in an otherwise conventional photomask. The photomask of the present invention is used to make semiconductor devices or integrated circuits. In a preferred embodiment of the present invention is directed to an aaPSM comprising: a patterned opaque layer with a first set of at least one light transmitting openings and a second set of at least one light transmitting openings; a deposited substantially transparent layer underlying the opaque layer wherein the deposited substantially transparent layer has corresponding light transmitting openings to each of the openings of the first set of at least one light transmitting openings, a substantially transparent etch stop layer underlying the deposited substantially transparent layer, and a substantially transparent substrate underlying the transparent etch stop layer. In a preferred embodiment, the internal substantially transparent etch stop layer of the present invention is comprised of MgFand even more particularly may be comprised of MgFdeposited under evaporation. Other materials that may be used for the substantially transparent etch stop layer of the present invention include but are not limited to AlOand AlN.

US Patent:

20050053847, Mar 10, 2005

Filed:

Sep 9, 2003

Appl. No.:

10/658039

Inventors:

Patrick Martin - Dallas TX, US
Matthew Lassiter - McKinney TX, US
Darren Taylor - The Colony TX, US
Michael Cangemi - McKinney TX, US
Eric Poortinga - Austin TX, US

International Classification:

G03F009/00
G03C005/00

US Classification:

430005000, 430322000, 430323000, 430311000, 430312000

Abstract:

The present invention generally relates, to optical lithography and more particularly relates to the fabrication of transparent or semitransparent phase shifting masks used in the manufacture of semiconductor devices. In particular, the present invention utilizes an internal etch stop layer and either a deposited substantially transparent layer, deposited partially transparent layer or deposited opaque thereon in an otherwise conventional photomask. The photomask of the present invention is used to make semiconductor devices or integrated circuits. In a preferred embodiment of the present invention is directed to an aaPSM comprising: a patterned opaque layer with a first set of at least one light transmitting openings and a second set of at least one light transmitting openings; a deposited substantially transparent layer underlying the opaque layer wherein the deposited substantially transparent layer has corresponding light transmitting openings to each of the openings of the first set of at least one light transmitting openings, a substantially transparent etch stop layer underlying the deposited substantially transparent layer, and a substantially transparent substrate underlying the transparent etch stop layer. In a preferred embodiment, the internal substantially transparent etch stop layer of the present invention is comprised of MgFand even more particularly may be comprised of MgFdeposited under evaporation. Other materials that may be used for the substantially transparent etch stop layer of the present invention include but are not limited to AlOand AlN.

US Patent:

20060051681, Mar 9, 2006

Filed:

Sep 8, 2004

Appl. No.:

10/936071

Inventors:

Darren Taylor - The Colony TX, US

International Classification:

G03C 5/00
G03F 1/00

US Classification:

430005000, 430322000, 430030000, 430323000, 430324000

Abstract:

A method of repairing a photomask having a pattern layer, an internal etch stop layer underlying the pattern layer and a substantially transparent substrate. After the mask has been partially or fully processed, the mask is inspected for defects. Defects which are appropriate to be repaired are identified, and openings associated with each defect are written into jobdeck instructions. A new layer of photoresist material is then deposited on the photomask after cleansing, and openings associated with each defect to be repaired are written into the new layer of photoresist. After the openings are developed and rinsed so that the defects to be repaired are exposed, the photomask is again etched to remove the exposed defects. Since there is an etch stop layer underlying the defects in the exposed areas, only the defect is removed and no further damage is caused to the photomask. The photoresist may then be removed, and the photomask may then be inspected to insure that the defects have been sufficiently repaired. Further processing of the photomask may then continue in the usual manner.