Parth P Dave

age ~58

from Cedar Park, TX

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Also known as:

Connected to:

Parth Dave Phones & Addresses

Work:

Position:

Indian child actor • Artist

Education:

He is a child artist who began his career with ad-commercials at the age of 2 years and moved on to acting in films from the age of 5....

Skills & Activities:

Activity:

Films

Method And System For Integrating Equipment Integration Software, Equipment Events, Mes And Rules Databases
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US Patent:

20060271223, Nov 30, 2006
Filed:

May 27, 2005
Appl. No.:

10/908835
Inventors:

Karl Gartland - Essex Junction VT, US
Barry Herbold - Beacon NY, US
Glade Keaney - Red Hook NY, US
Robert MacHugh - Newburgh NY, US
Parth Dave - Wappingers Falls NY, US
Bradford Pousland - Austin TX, US
Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:

G06F 19/00
US Classification:

700103000
Abstract:

A manufacturing system configured for automated operational state tracking and management includes an automated manufacturing execution system (MES) in communication with manufacturing equipment, equipment integration software (EIS) configured to provide an interface between the MES and the manufacturing equipment, and a plug-in module in operable communication with the EIS. The plug-in module is configured to automatically obtain information regarding rules for changing defined operational states, and to receive triggering event information from the manufacturing equipment. The plug-in module is further configured to compare the triggering event information with the rules, and to change the present operational state of the manufacturing equipment in accordance with the rules.

Metal Deposition Process For Metal Lines Over Topography
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US Patent:

6083823, Jul 4, 2000
Filed:

Jun 28, 1996
Appl. No.:

8/672878
Inventors:

Parth P. Dave - Wappingers Falls NY
Nancy A. Greco - Lagrangeville NY
Ernest N. Levine - Poughkeepsie NY
Darryl D. Restaino - Modena NY
Assignee:

International Business Machines Corporation - Armonk NY
International Classification:

H01L 214763
US Classification:

438625
Abstract:

A metal layer is formed at high deposition rate over severe topography by a two step process including formation of a seed layer by cold deposition followed by a second portion of the metal layer deposited at a temperature approximating but below a temperature at which metal from a lower metal layer can extrude through vias reaching thereto. The seed layer is preferably limited to a thickness at which the conformality of the cold-deposited metal will not significantly increase severity of surface topography, generally about one-fourth the thickness of the hot-deposited layer. Via connections are formed without voids and a more planar metal layer surface is formed which allows formation of a protective/anti-reflective layer with good integrity while enhancing subsequent lithographic patterning, thereby eliminating alteration of metal surface chemistry by resist developers and resultant residual metal included within the severe topography.