David E Abraham

US Patent:

6750214, Jun 15, 2004

Filed:

Jun 4, 2003

Appl. No.:

10/455546

Inventors:

Alan John Collis - New York NY 10017
David Nathan Abraham Fox - New York NY 10017
Julie Newman - New York NY 10017

International Classification:

A01N 31519

US Classification:

51421706, 514257, 5142285, 5142328, 51425216, 5142594, 514218, 544 582, 544115, 544247, 540575, 540600

Abstract:

The invention provides compounds of formula (I), wherein R represents C alkoxy optionally substituted by one or more fluorine atoms; R represents H or C alkoxy optionally substituted by one or more fluorine atoms; R represents one or more groups independently selected from H, halogen, C alkoxy and CF ; in addition, R and one R group may together represent âOCH â, the methylene group being attached to the ortho-position of the pendant phenyl ring; R represents a 4-, 5- or 6-membered heterocyclic ring containing 1 or 2 heteroatoms selected from N, O and S, the ring being optionally fused to a benzene ring or a 5- or 6-membered heterocyclic ring containing 1 or 2 heteroatoms selected from N, O and S, the ring system as a whole being optionally substituted; X represents CH or N; and L is absent or represents a cyclic group or an open chain group; and the pharmaceutically acceptable salts thereof. The compounds of formula (I) are useful in the treatment of inter alia benign prostatic hyperplasia.

US Patent:

7102916, Sep 5, 2006

Filed:

Jun 30, 2004

Appl. No.:

10/710281

Inventors:

Philip L. Trouilloud - Norwood NJ, US
David W. Abraham - Croton NY, US
John K. DeBrosse - Colchester VT, US
Daniel Worledge - Poughquag NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G11C 11/00

US Classification:

365158, 171173

Abstract:

A method for determining a desired anisotropy axis angle for a magnetic random access memory (MRAM) device includes selecting a plurality of initial values for the anisotropy axis angle and determining, for each selected initial value, a minimum thickness for at least one ferromagnetic layer of the MRAM device. The minimum thickness corresponds to a predefined activation energy of an individual cell within the MRAM device. For each selected value, a minimum applied magnetic field value in a wordline direction and a bitline direction of the MRAM device is also determined so as maintain the predefined activation energy. For each selected value, an applied power per bit value is calculated, wherein the desired anisotropy axis angle is the selected anisotropy axis angle corresponding to a minimum power per bit value.

US Patent:

7252774, Aug 7, 2007

Filed:

Jun 8, 2005

Appl. No.:

11/147512

Inventors:

Eugene J. O'Sullivan - Nyack NY, US
David Abraham - Croton on Hudson NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B44C 1/22
C03C 15/00
C03C 25/68
C23F 1/00

US Classification:

216 22, 216 57

Abstract:

An etching process is employed to selectively pattern the exposed magnetic film layer of a magnetic thin film structure. The magnetic structure to be etched includes at least one bottom magnetic film layer and at least one top film layer which are separated by a tunnel barrier. The etching process employs various etching steps that selectively remove various layers of the magnetic thin film structure stopping on the tunnel barrier layer.

US Patent:

20120308599, Dec 6, 2012

Filed:

Feb 1, 2011

Appl. No.:

13/575987

Inventors:

Thomas B. Nutman - Chevy Chase MD, US
David Abraham - Wynnewood PA, US

Assignee:

Thomas Jefferson University - Philadelphia PA
Health and Human Services - Bethesda MD

International Classification:

A61K 39/00
C07H 21/04
A61P 33/00
C07K 14/435

US Classification:

4241911, 530350, 536 235

Abstract:

The polynucleotide encoding the SSIR gene from the nematode is provided, along with the polypeptide encoded by the SSIR gene. It was found that when mice were immunized with the SSIR polypeptide vaccine, it provided immunity to mice which were implanted with L3 implants. Methods for making the SSIR protein, recombinant vectors encoding the SSIR gene, a vaccine made from the SSIR protein, and methods of use are also provided.

US Patent:

20150128236, May 7, 2015

Filed:

Mar 4, 2014

Appl. No.:

14/196796

Inventors:

- Mountain View CA, US
Edison Tan - Brooklyn NY, US
Sacha Christophe Arnoud - San Francisco CA, US
David John Abraham - Brooklyn NY, US
Michael Crawford - Sydney, AU
Colin McMillen - Somerville MA, US
Joseph Andrew McClain - Cranberry Township PA, US
Bryan Arthur Pendleton - Swissvale PA, US
Mark R. Russell - Prospect PA, US
Luis Von Ahn - Pittsburgh PA, US

Assignee:

GOOGLE INC. - Mountain View CA

International Classification:

H04L 29/06

US Classification:

726 7

Abstract:

Systems and methods for verifying a user based on reputational information are provided. In particular, a computerized CAPTCHA system consisting of one or more computers can determine a trust score based on one or more reputation signals associated with a user computing device, select a challenge to provide to the user computing device based on the trust score, and determine whether to verify the user computing device based on a received response to the challenge and/or the trust score.

US Patent:

20140307876, Oct 16, 2014

Filed:

Apr 10, 2013

Appl. No.:

13/859979

Inventors:

Google Inc. - , US
Edison Tan - Brooklyn NY, US
David John Abraham - Brooklyn NY, US

Assignee:

Google Inc. - Mountain View CA

International Classification:

G10L 17/24

US Classification:

381 17

Abstract:

Systems and methods for generating and performing a three-dimensional audio CAPTCHA are provided. One exemplary system can include a decoy signal database storing a plurality of decoy signals. The system also can include a three-dimensional audio simulation engine for simulating the sounding of a target signal and at least one decoy signal in an acoustic environment and outputting a stereophonic audio signal based on the simulation. One exemplary method includes providing an audio prompt to a resource requesting entity. The audio prompt can have been generated based on a three-dimensional audio simulation of the sounding of a target signal containing an authentication key and at least one decoy signal in an acoustic environment. The method can include receiving a response to the audio prompt from the resource requesting entity and comparing the response to the authentication key.

US Patent:

20110039020, Feb 17, 2011

Filed:

Oct 22, 2010

Appl. No.:

12/910236

Inventors:

Snorri Thorgeir Ingvarsson - White Plains NY, US
Philip Louis Trouilloud - Norwood NJ, US
Shouheng Sun - Millwood NJ, US
Roger Hilsen Koch - Amawalk NY, US
David William Abraham - Croton-on-Hudson NY, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

B05D 5/00
C23C 14/34
B29C 35/08

US Classification:

427128, 2041922, 264400

Abstract:

Magnetic materials and uses thereof are provided. In one aspect, a magnetic film is provided. The magnetic film comprises superparamagnetic particles on at least one surface thereof. The magnetic film may be patterned and may comprise a ferromagnetic material. The superparamagnetic particles may be coated with a non-magnetic polymer and/or embedded in a non-magnetic host material. The magnetic film may have increased damping and/or decreased coercivity.

US Patent:

20080211055, Sep 4, 2008

Filed:

May 15, 2008

Appl. No.:

12/120915

Inventors:

Solomon Assefa - Elmsford NY, US
Michael C. Gaidis - Wappingers Falls NY, US
Sivananda Kanakasabapathy - Hopewell Junction NY, US
John P. Hummel - Millbrook NY, US
David W. Abraham - Croton-on-Hudson NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 43/00
H01L 43/12

US Classification:

257506, 438 3, 257E43006, 257E43001

Abstract:

Novel methods for reliably and reproducibly forming magnetic tunnel junctions in integrated circuits are described. In accordance with aspects of the invention, sidewall spacer features are utilized during the processing of the film stack. Advantageously, these sidewall spacer features create a tapered masking feature which helps to avoid byproduct redeposition during the etching of the MTJ film stack, thereby improving process yield. Moreover, the sidewall spacer features may be used as encapsulating layers during subsequent processing steps and as vertical contacts to higher levels of metallization.