David Abraham

Address:

11395 Smathers Cir, Coral Gables, FL 33156

VIN:

JHMGD37627S031942

Make:

HONDA

Model:

FIT

Year:

2007

US Patent:

6368878, Apr 9, 2002

Filed:

Mar 21, 2000

Appl. No.:

09/531715

Inventors:

David William Abraham - Ossining NY
William Joseph Gallagher - Ardsley NY
Philip Louis Trouilloud - Mahwah NJ

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2100

US Classification:

438 3, 438 48

Abstract:

Magnetic memory cells include a changeable magnetic region with a magnetic axis along which two directions of magnetization can be imposed, thereby providing two respective states into which the cells are changeable according to electrical and resultant magnetic stimuli applied thereto. Asymmetry in the magnetic stimuli applied to the cell while writing a state therein is disclosed to provide a predictable magnetization pattern evolution from the first direction to the second direction. Physical asymmetry in the layout and/or magnetization of the cell is also disclosed which provides the predictable pattern evolution. These principles can be applied to magnetic random access memory (MRAM) arrays which employ magnetic tunnel junction (MTJ) cells at the intersections of bitlines and wordlines which supply the electrical and resultant magnetic stimuli to write the cells therein.

US Patent:

6452764, Sep 17, 2002

Filed:

Oct 16, 2000

Appl. No.:

09/688732

Inventors:

David William Abraham - Ossining NY
Philip Edward Batson - Katonah NY
William Joseph Gallagher - Ardsley NY
Stuart Parkin - San Jose CA
John Slonczewski - Katonah NY
Philip Louis Trouilloud - Mahwah NJ

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G11B 539

US Classification:

3603242, 365173

Abstract:

Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e. g. , the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region. The principles of the present invention can be applied to magnetic random access memory (âMRAMâ) arrays, which employ giant magnetoresistive (âGMRâ) cells, or magnetic tunnel junction (âMTJâ) cells, at the intersections of bitlines and wordlines, and also to magnetic sensors such as magnetic data storage devices having access elements used to access data on a magnetic data storage medium.

US Patent:

6469690, Oct 22, 2002

Filed:

Apr 20, 2000

Appl. No.:

09/553996

Inventors:

David William Abraham - Croton NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G09G 500

US Classification:

345156, 345157, 345163, 345168

Abstract:

A work station comprising a plurality of computers, and a method of operating that work station. Each of the computers at the work station includes a keyboard port and a pointing device port; and the work station further comprises a single external user keyboard, a single external pointing device, and a fanout switching unit connected to and for interfacing between the computers and the external keyboard and pointing device. In use, at any given time, the external keyboard and pointing device control a selected one of the computers, via the fanout switching unit. The fanout switching unit, acting in response to a predefined switching command from at least one of the external keyboard and pointing device, changes, or switches, the computer that is controlled by the external keyboard and pointing device. In particular, the computer that is controlled changes from a first of the computers to a second of the computers. The work station further comprises means, also acting in response to the predefined switching command, to copy data from a predetermined database of the first computer and to write the copied data in a predetermined database of the second computer.

US Patent:

6590750, Jul 8, 2003

Filed:

Feb 10, 1998

Appl. No.:

09/021352

Inventors:

David William Abraham - Ossining NY
Philip Edward Batson - Katonah NY
John Slonczewski - Katonah NY
Philip Louis Trouilloud - Mahwah NJ
William Joseph Gallagher - Ardsley NY
Stuart Parkin - San Jose CA

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G11B 539

US Classification:

3603242, 3603241

Abstract:

Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e. g. , the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region. The principles of the present invention can be applied to magnetic random access memory (âMRAMâ) arrays, which employ giant magnetoresistive (âGMRâ) cells, or magnetic tunnel junction (âMTJâ) cells, at the intersections of bitlines and wordlines, and also to magnetic sensors such as magnetic data storage devices having access elements used to access data on a magnetic data storage medium.

US Patent:

6711466, Mar 23, 2004

Filed:

Jan 7, 2002

Appl. No.:

10/042917

Inventors:

David W. Abraham - Croton NY
Richard A. John - Yorktown Heights NY
Robert J. von Gutfeld - New York NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G06F 1700

US Classification:

700240, 700231, 118712

Abstract:

A system and method for maintaining a dispensing system a desired distance between a dispenser and a surface is shown. The system includes a light-emitting device, connected to the dispenser, that emits light in the direction of the surface. The emitted light is reflected off of the surface as well as a mirror connected to the dispenser. Subsequently, all reflected light is received by a sensor. Using the sensor data, a computer calculates the distance between the dispenser and the surface. A servo device then adjusts the location of the dispenser, in accordance with the calculated distance, in order to maintain the desired distance between the dispenser and the surface. One advantage of the system and method is the increased ability to maintain a desired distance between the dispenser and the surface. This can lead to increased and higher quality production by a dispensing system.

US Patent:

6750214, Jun 15, 2004

Filed:

Jun 4, 2003

Appl. No.:

10/455546

Inventors:

Alan John Collis - New York NY 10017
David Nathan Abraham Fox - New York NY 10017
Julie Newman - New York NY 10017

International Classification:

A01N 31519

US Classification:

51421706, 514257, 5142285, 5142328, 51425216, 5142594, 514218, 544 582, 544115, 544247, 540575, 540600

Abstract:

The invention provides compounds of formula (I), wherein R represents C alkoxy optionally substituted by one or more fluorine atoms; R represents H or C alkoxy optionally substituted by one or more fluorine atoms; R represents one or more groups independently selected from H, halogen, C alkoxy and CF ; in addition, R and one R group may together represent âOCH â, the methylene group being attached to the ortho-position of the pendant phenyl ring; R represents a 4-, 5- or 6-membered heterocyclic ring containing 1 or 2 heteroatoms selected from N, O and S, the ring being optionally fused to a benzene ring or a 5- or 6-membered heterocyclic ring containing 1 or 2 heteroatoms selected from N, O and S, the ring system as a whole being optionally substituted; X represents CH or N; and L is absent or represents a cyclic group or an open chain group; and the pharmaceutically acceptable salts thereof. The compounds of formula (I) are useful in the treatment of inter alia benign prostatic hyperplasia.

US Patent:

6958929, Oct 25, 2005

Filed:

Oct 28, 2003

Appl. No.:

10/695572

Inventors:

David William Abraham - Croton NY, US
Philip Louis Trouilloud - Norwood NJ, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G11C011/00
G11C007/04

US Classification:

365158, 365211

Abstract:

A compensation system for an array of magnetic memory cells measures local operating conditions and compensates for changes in the operating characteristics of the magnetic memory cells in the array that result from the changes in the operating conditions. The magnetic field strength near the magnetic memory array is measured. If the magnetic field strength rises above, or falls below certain predetermined threshold values, the write current used to alter the orientation of the magnetic fields in the magnetic memory cells is altered based upon the predetermined operating characteristics of the memory cells. A solenoid or similar type magnetic field generator may also be used to substantially compensate for variations in the sensed magnetic fields. In addition, the temperature of the environment in which the magnetic memory cells are operating is sensed and appropriate changes made in the write current. Temperature control means may also be used to compensate for sensed changes in the local operating environment.

US Patent:

7034519, Apr 25, 2006

Filed:

Jan 8, 2004

Appl. No.:

10/753775

Inventors:

David W. Abraham - Croton NY, US
Daniel Worledge - Poughquag NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G01R 31/02

US Classification:

3241581

Abstract:

An improved method and apparatus for determining a property based upon at least two measurements uses simultaneous probe signals having two different frequencies. The probe signals are produced simultaneously such that the position of the probes is identical when the probe signals are produced. The responses to the two probe signals have frequencies that correspond to the probe signals. The individual responses are isolated from each other based upon their differing frequencies by frequency lock-in circuits. By performing the measurements simultaneously, positional errors that are introduced due to small changes that occur in the position of the probes if the measurements are taken sequentially are eliminated.