David A Becker

US Patent:

6342165, Jan 29, 2002

Filed:

Jul 19, 2000

Appl. No.:

09/619101

Inventors:

Kevin G. Donohoe - Boise ID
David S. Becker - Boise ID

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 213065

US Classification:

216 67, 216 13, 216 17, 216 41, 216 74, 216 79, 438710, 438715, 438723

Abstract:

A plasma etch process for etching BPSG employing two primary etchants at low flows and pressures, and a relatively low temperature environment within the etch chamber, which includes a fluorine scavenger in the form of silicon. The two primary etchant gases are CHF and CH F , delivered at flow rates on the order of between about 10 and 40 sccm for CHF and between about 10 and 40 sccm for CH F. Small quantities, on the order of 10 sccm or less, of other gases such as C HF and CF may be added. A variant of the inventive etch process employing only CHF during a second phase thereof may be useful in providing a âpunchâ or dimple at the contact bottom extending into the pristine substrate silicon under the BPSG and, optionally, other layers, and can be used to etch through both BPSG layers and nitride films to contact a word line (or the like) thereunder wherein the contact so formed has a reduced taper as it passes through the nitride film above the word line, resulting in a desirable, larger contact dimension. The system chamber temperature is defined and controlled at the roof over the wafer and the ring surrounding the wafer, the roof being held at a temperature of about 115Â C. to 150Â C.

US Patent:

6408283, Jun 18, 2002

Filed:

May 14, 1999

Appl. No.:

09/311582

Inventors:

Marc Alaia - Glenshaw PA
David J. Becker - Sewickley PA
Vincent F. Rago - Pittsburgh PA
William D. Rupp - Pittsburgh PA
Robert G. Stevens - Pittsburgh PA

Assignee:

FreeMarkets, Inc. - Pittsburgh PA

International Classification:

G06F 1530

US Classification:

705 37, 705 26, 705 27

Abstract:

A method and system for conducting electronic auctions is described. A dynamic lot closing extension feature avoids collisions in closing times of multiple lots by dynamically extending the closing time of a subsequent lot if a preceding lots closing time is extended to be too close to the subsequent lots then-currently scheduled closing time. Scheduled closing times can be extended with a flexible overtime feature, in which the properties of the event triggering the extension and the duration of the overtime period(s) can be tailored to a particular auction, particular lots of products within an auction, and to the particular time within an auction process. The bidding status of a lot can be set to a âpendingâ status after the nominal closing time for submission of bids to allow bidders to alert the auction coordinator of technical problems in submission of bids. This allows the possibility for a lot to be return to open status for further bidding by all bidders. The auction may be paused by the auction coordinator to correct technical, market and miscellaneous problems that may arise during the course of an auction.

US Patent:

6436844, Aug 20, 2002

Filed:

Aug 27, 2001

Appl. No.:

09/939905

Inventors:

David S. Becker - Boise ID

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 21461

US Classification:

438761

Abstract:

A semiconductor processing method is provided for making contact openings. It includes depositing several insulative layers and performing an anisotropic etch. One layer is a conformal oxide covering the contact area and adjacent structures. A second layer is a breadloafed oxide deposited over the contact area and adjacent structures. A third layer is a doped oxide deposited over the two lower layers. The anisotropic etch is performed through the oxide layers to the contact area located on a lower substrate. The etch is selectively more rapid in the third oxide than in the two other oxides. The breadloafed oxide provides additional protect on and reduces the risk of etch-through to conductive structures adjacent the contact area. An alternate embodiment replaces the two lowest oxide layers by a breadloafed nitride layer. In this embodiment, the anisotropic etch is selectively more rapid in oxides than in nitrides.

US Patent:

6451678, Sep 17, 2002

Filed:

Nov 27, 2000

Appl. No.:

09/724885

Inventors:

David S. Becker - Boise ID

Assignee:

Micron Technology, lnc. - Boise ID

International Classification:

H01L 213205

US Classification:

438585, 438586, 438703, 438584, 438592, 438783

Abstract:

A method of forming a transistor for a semiconductor device from a semiconductor wafer comprises forming a first nitride layer over the front and back of the wafer, and forming a second nitride layer over the front and back of the wafer and over the first nitride layer. A first resist layer is formed over the front of the wafer and at least a portion of the second nitride layer over the front of the wafer is exposed. The first and second nitride layers are removed from the back of the wafer while, simultaneously, at least a portion of the exposed portion of the second nitride layer over the front of the wafer is removed. Next, a second layer of resist is formed leaving at least a portion of the first nitride layer exposed. Finally, the exposed portion of the first nitride layer is etched.

US Patent:

6492279, Dec 10, 2002

Filed:

Jan 27, 2000

Appl. No.:

09/492738

Inventors:

David S. Becker - Boise ID
Bradley J. Howard - Boise ID
Kevin G. Donohoe - Boise ID

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 21302

US Classification:

438714, 438723, 438724

Abstract:

A patterned organic masking layer is formed outwardly of a feature layer to be etched. It has at least one feature pattern having a minimum feature dimension of less than or equal to 0. 3 micron. The feature layer has a thickness which is to be etched to form the one feature pattern in the feature layer. The feature pattern is plasma etched into the feature layer using the masking layer as a mask. The plasma etching comprises at least one etching segment where at least 30% of said thickness of the feature layer is etched using an etching gas comprising one gas compound comprising carbon, hydrogen and at least one halogen present at greater than or equal to 70% concentration by volume as compared to all carbon, hydrogen and halogen containing gas compounds in the etching gas. Such plasma etching is conducted under conditions effective to produce at least that portion of the one feature pattern in the feature layer formed during the one etching segment to have a sidewall taper, if any, of less than or equal to 5Â and an organic masking layer top outer surface roughness proximate the feature pattern at a conclusion of the etching segment which is characterizable by an average value less than 100 Angstroms. Such value is determinable by scanning electron microscopy as an average maximum size of all surface discernible objects of the patterned masking layer as measured and averaged along any 0.

US Patent:

6499018, Dec 24, 2002

Filed:

May 14, 1999

Appl. No.:

09/311558

Inventors:

Marc Alaia - Glenshaw PA
David J. Becker - Sewickley PA
Vincent F. Rago - Pittsburgh PA
William D. Rupp - Pittsburgh PA

Assignee:

FreeMarkets, Inc. - Pittsburgh PA

International Classification:

G06F 1530

US Classification:

705 37, 705 26, 705 27, 705 1

Abstract:

A method and system for conducting electronic auctions is described. A dynamic lot closing extension feature avoids collisions in closing times of multiple lots by dynamically extending the closing time of a subsequent lot if a preceding lots closing time is extended to be too close to the subsequent lots then-currently scheduled closing time. Scheduled closing times can be extended with a flexible overtime feature, in which the properties of the event triggering the extension and the duration of the overtime period(s) can be tailored to a particular auction, particular lots of products within an auction, and to the particular time within an auction process. The bidding status of a lot can be set to a âpendingâ status after the nominal closing time for submission of bids to allow bidders to alert the auction coordinator of technical problems in submission of bids. This allows the possibility for a lot to be return to open status for further bidding by all bidders. The auction may be paused by the auction coordinator to correct technical, market and miscellaneous problems that may arise during the course of an auction.

US Patent:

6564192, May 13, 2003

Filed:

Jun 8, 1999

Appl. No.:

09/327600

Inventors:

Vincent F. Rago - Pittsburgh PA
Glen T. Meakem - Sewickley PA
Robert G. Stevens - Pittsburgh PA
David J. Becker - Sewickley PA
Anthony F. Bernard - Wexford PA
William D. Rupp - Pittsburgh PA
Daniel C. Heckmann - Pittsburgh PA
Julia L. Rickert - Wexford PA
David M. Sobie - Telluride CO

Assignee:

FreeMarkets, Inc. - Pittsburgh PA

International Classification:

G06F 1760

US Classification:

705 37, 705 26

Abstract:

A method and system for conducting electronic online auctions between a plurality of potential bidders using differential index bidding is disclosed. The originator of the auction specifies one or more indexes as the basis for establishing a competitive price point. The index can be a published market index, or a proprietary price array developed by the buyer. The bidders specify bids as a percentage or absolute amount off of the one or more indexes. The originator of the auction compares the submitted bids and provides feedback to the bidders.

US Patent:

6610212, Aug 26, 2003

Filed:

Jan 29, 2002

Appl. No.:

10/060436

Inventors:

Kevin G. Donohoe - Boise ID
David S. Becker - Boise ID

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 213065

US Classification:

216 67, 204169, 204170, 216 13, 216 17, 216 41, 216 74, 216 79, 438710, 438715, 438723, 361230, 361235

Abstract:

A plasma etch process for etching BPSG employing two primary etchants at low flows and pressures, and a relatively low temperature environment within the etch chamber, which includes a fluorine scavenger in the form of silicon. The two primary etchant gases are CHF and CH F , delivered at flow rates on the order of between about 10 and 40 sccm for CHF and between about 10 and 40 sccm for CH F. Small quantities, on the order of 10 sccm or less, of other gases such as C HF and CF may be added.

Address:

1633 S Riv Grv Way, Eagle, ID 83616

Phone:

7249355254

VIN:

JTEBU5JR0A5023236

Make:

TOYOTA

Model:

4 RUNNER

Year:

2010