David Adam Blankenship

US Patent:

8589827, Nov 19, 2013

Filed:

Oct 29, 2010

Appl. No.:

12/915455

Inventors:

John J. Biafore - North Scituate RI, US
Mark D. Smith - Austin TX, US
David Blankenship - Austin TX, US

Assignee:

KLA-Tencor Corporation - Milpitas CA

International Classification:

G06F 17/50
G06F 17/10
G06F 7/60
G06G 7/62
G06G 7/58
G06G 7/48

US Classification:

716 51, 716 54, 703 2, 703 12, 703 13

Abstract:

A processor based method for measuring dimensional properties of a photoresist profile. A number acid generators and quenchers within a photoresist volume is determined. A number of photons absorbed by the photoresist volume is determined. A number of the acid generators converted to acid is determined. A number of acid and quencher reactions within the photoresist volume is determined. A development of the photoresist volume is calculated. The processor is used to produce a three-dimensional simulated scanning electron microscope image of the photoresist profile created by the development of the photoresist volume. The dimensional properties of the photoresist profile are measured.

US Patent:

20140067346, Mar 6, 2014

Filed:

Aug 28, 2013

Appl. No.:

14/011989

Inventors:

Mark D. Smith - Austin TX, US
David Blankenship - Austin TX, US

Assignee:

KLA-Tencor Corporation - Milpitas CA

International Classification:

G06F 19/00

US Classification:

703 2, 703 12

Abstract:

A processor based method for measuring dimensional properties of a photoresist profile by determining a number acid generators and quenchers within a photoresist volume, determining a number of photons absorbed by the photoresist volume, determining a number of the acid generators converted to acid, determining a number of acid and quencher reactions within the photoresist volume, calculating a development of the photoresist volume, producing with the processor a three-dimensional simulated scanning electron microscope image of the photoresist profile created by the development of the photoresist volume, and measuring the dimensional properties of the photoresist profile.

US Patent:

20180017873, Jan 18, 2018

Filed:

Aug 9, 2016

Appl. No.:

15/232302

Inventors:

- Milpitas CA, US
Mark D. Smith - San Jose CA, US
John S. Graves - Austin TX, US
David A. Blankenship - Austin TX, US
Alessandro Vaglio Pret - Austin TX, US

International Classification:

G03F 7/38

Abstract:

In some embodiments, a method may include improving a development process of a photoresist. The method may include simulating a negative-tone development process of a photoresist. The method may include determining a reaction of a developer with a soluble photoresist surface. Determining the reaction of the developer may include applying a reaction rate constant at a power of a reaction order to a blocked polymer concentration to yield a resist dissolution rate of soluble resist comprising the dissolution-limited regime of development. The method may include determining a flux of the developer into exposed and partially soluble resist. Determining the flux of the developer may include applying a vector valued diffusion coefficient of the developer dependent upon the blocked polymer concentration to a gradient of developer concentration to an expansion rate of insoluble resist comprising the expansion-controlled regime of development. The method may include optimizing an illumination source and a mask on a full chip.