David L Brady

US Patent:

6380606, Apr 30, 2002

Filed:

Dec 2, 1998

Appl. No.:

09/205413

Inventors:

David C. Brady - Austin TX
Isik C. Kizilyalli - Orlando FL
Pradip K. Roy - Orlando FL
Hem M. Vaidya - Orlando FL

Assignee:

Agere Systems Guardian Corp - Orlando FL

International Classification:

H01L 2900

US Classification:

257506, 257500, 257501, 257504, 257508, 257510

Abstract:

The present invention provides methods of manufacturing a field oxide isolation structure over a semiconductor. One of the methods includes the steps of: (1) depositing a first stack-nitride sublayer over the semiconductor at a first deposition rate and (2) subsequently depositing a second stack-nitride sublayer over the first stack-sublayer at a second deposition rate that is either greater or less than the first deposition rate. The first and second deposition rates provide first and second stack-nitride sublayers that cooperate to form a relatively thin, uniform thickness of the field oxide isolation structure over the semiconductor and provide a stress-accommodating system within the semiconductor. The varying rates of deposition and accompanying changes in mixture ratio, produce a stack that is better able to absorb stress, has greater uniformity and is far less subject to the disadvantageous phenomenon of stack-lifting, particularly encountered in semiconductor having a PADOX layer deposited thereon.

US Patent:

44823274, Nov 13, 1984

Filed:

May 10, 1983

Appl. No.:

6/493309

Inventors:

David A. Brady - Dallas TX

International Classification:

G09B 1900

US Classification:

434219

Abstract:

Apparatus for training and testing persons for pouring predetermined quantities of liquid in the mixing and preparation of beverages. The apparatus includes a frame having a backwall and spaced apart support members for supporting a plurality of transparent graduated tubular containers. Each container is marked with graduations indicating incremental quantities of liquid correlated with indicia printed on the containers and/or on the frame adjacent to the mouths of the respective graduated containers. The apparatus is particularly useful in training and testing persons for free pouring beverages and beverage ingredients in the retail liquor service industry. A testing method using the apparatus includes positioning the apparatus so that the trainee cannot view the containers during test pouring operations. Test scores are recorded on a score sheet having printed facsimiles of the graduated containers.

US Patent:

6281138, Aug 28, 2001

Filed:

Jun 24, 1999

Appl. No.:

9/338939

Inventors:

David C. Brady - Austin TX
Isik C. Kizilyalli - Orlando FL
Yi Ma - Orlando FL
Pradip K. Roy - Orlando FL

Assignee:

Agere Systems Guardian Corp. - Orlando FL

International Classification:

H01L 2131
H01L 2904
H01L 2976

US Classification:

438762

Abstract:

This invention includes a novel synthesis of a three-step process of growing, depositing and growing SiO. sub. 2 under low pressure, e. g. , 0. 2-10 Torr, to generate high quality, robust and reliable gate oxides for sub 0. 5 micron technologies. The first layer, 1. 0-3. 0 nm is thermally grown for passivation of the Si-semiconductor surface. The second deposited layer, which contains a substantial concentration of a hydrogen isotope, such as deuterium, forms an interface with the first grown layer. During the third step of the synthesis densification of the deposited oxide layers occurs with a simultaneous removal of the interface traps at the interface and growth of a stress-modulated SiO. sub. 2 occurs at the Si/first grown layer interface in the presence of a stress-accommodating interface layer resulting in a planar and stress-reduced Si/SiO. sub. 2 interface.

US Patent:

60906863, Jul 18, 2000

Filed:

Jun 18, 1997

Appl. No.:

8/878242

Inventors:

David C. Brady - Austin TX
Isik C. Kizilyalli - Orlando FL
Pradip K. Roy - Orlando FL
Hem M. Vaidya - Orlando FL

Assignee:

Lucent Technologies, Inc. - Murrray Hill NJ

International Classification:

H01L 2176

US Classification:

438439

Abstract:

The present invention provides methods of manufacturing a field oxide isolation structure over a semiconductor. One of the methods includes the steps of: (1) depositing a first stack-nitride sublayer over the semiconductor at a first deposition rate and (2) subsequently depositing a second stack-nitride sublayer over the first stack-sublayer at a second deposition rate that is either greater or less than the first deposition rate. The first and second deposition rates provide first and second stack-nitride sublayers that cooperate to form a relatively thin, uniform thickness of the field oxide isolation structure over the semiconductor and provide a stress-accommodating system within the semiconductor. The varying rates of deposition and accompanying changes in mixture ratio, produce a stack that is better able to absorb stress, has greater uniformity and is far less subject to the disadvantageous phenomenon of stack-lifting, particularly encountered in semiconductor having a PADOX layer deposited thereon.

US Patent:

60252804, Feb 15, 2000

Filed:

Apr 28, 1997

Appl. No.:

8/848109

Inventors:

David C. Brady - Austin TX
Isik C. Kizilyalli - Orlando FL
Yi Ma - Orlando FL
Pradip K. Roy - Orlando FL

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

H01L 21316

US Classification:

438762

Abstract:

This invention includes a novel synthesis of a three-step process of growing, depositing and growing SiO. sub. 2 under low pressure, e. g. , 0. 2-10 Torr, to generate high quality, robust and reliable gate oxides for sub 0. 5 micron technologies. The first layer, 1. 0-3. 0 nm is thermally grown for passivation of the Si-semiconductor surface. The second deposited layer, which contains a substantial concentration of a hydrogen isotope, such as deuterium, forms an interface with the first grown layer. During the third step of the synthesis densification of the deposited oxide layers occurs with a simultaneous removal of the interface traps at the interface and growth of a stress-modulated SiO. sub. 2 occurs at the Si/first grown layer interface in the presence of a stress-accommodating interface layer resulting in a planar and stress-reduced Si/SiO. sub. 2 interface.

US Patent:

20200258763, Aug 13, 2020

Filed:

Apr 29, 2020

Appl. No.:

16/861868

Inventors:

- Gilbert AZ, US
Christian Forgey - Round Rock TX, US
Joshua Levinson - Gilbert AZ, US
Jeff Garbacik - Gilbert AZ, US
Alexander Trufanov - Souderton PA, US
Robert Kraiger - Gilbert AZ, US
David Brady - Gilbert AZ, US

Assignee:

OEM Group, LLC - Gilbert AZ

International Classification:

H01L 21/67
B05B 12/00
G01F 3/36

Abstract:

Various embodiments of a spray measurement system having a jig device that allows measuring spray output of one or more spray nozzles and determine spray distribution patterns of the spray nozzles are disclosed.

US Patent:

20200013650, Jan 9, 2020

Filed:

Jul 8, 2019

Appl. No.:

16/505450

Inventors:

- Gilbert AZ, US
Christian Forgey - Round Rock TX, US
Joshua Levinson - Gilbert AZ, US
Jeff Garbacik - Gilbert AZ, US
Alexander Trufanov - Souderton PA, US
Robert Kraiger - Gilbert AZ, US
David Brady - Gilbert AZ, US

Assignee:

OEM Group, LLC - Gilbert AZ

International Classification:

H01L 21/67
G01F 3/36
B05B 12/00

Abstract:

Various embodiments of a spray measurement system having a jig device that allows measuring spray output of one or more spray nozzles and determine spray distribution patterns of the spray nozzles are disclosed.