David J Carlson

US Patent:

6368567, Apr 9, 2002

Filed:

Oct 7, 1998

Appl. No.:

09/167269

Inventors:

Paul B. Comita - Menlo Park CA
Rekha Ranganathan - Malden MA
David K. Carlson - Santa Clara CA
Dale R. DuBois - Los Gatos CA
Hali J. L. Forstner - Redwood City CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C01B 700

US Classification:

423240R, 423325, 423344, 423439, 423462

Abstract:

A method and an apparatus is provided for removing wafer processing by-products from gas fluid exhaust systems utilizing an energy source placed within an exhaust channel either alone or in combination with a cleaning gas. The placement of the energy source in an exhaust channel enables emitted energy to react with wafer processing by-products to convert the by-product residues to more removable forms. Additionally provided is a cleaning gas source internal to the exhaust channel to further react with and convert exiting by-product residues to gaseous fluids.

US Patent:

H002048, Sep 3, 2002

Filed:

Feb 14, 1995

Appl. No.:

08/388600

Inventors:

Haixing Wan - Mahwah NJ
Diane Zhang - Edison NJ
David Carlson - Harrison NJ
Alan A. Bornstein - Westwood NJ

Assignee:

Fuji Hunt Photographic Chemicals, Inc. - Allendale NJ

International Classification:

G03C 518

US Classification:

430480, 430464, 430478, 430482, 430483, 430486

Abstract:

A non-hydroquinone photographic developer composition comprising: (a) a developer selected from the group consisting of ascorbic acid and sugar-type derivatives thereof, or alkali metal salts and mixtures thereof, in an amount of 0. 1 to 0. 4 mol/liter (mol/l); (b) an effective amount of an auxiliary developing agent comprising a 3-pyrazolidone compound, an aminophenol or a mixture thereof; (c) an alkali metal sulfite in an amount less than or equal to 0. 32 mol/l; (d) an alkali metal carbonate in an amount of 0. 1 to 0. 4 mol/l; (e) an alkali metal hydroxide in an amount of from 0. 08 to 2. 0 mols/l; (f) with the developer composition having a pH of 11. 8 or higher at 25Â C. ; and (g) the developer composition does not contain an alkanolamine or contains an alkanolamine in an amount of less than 5 g/l; where the developer composition is useful for processing standard rapid access films while showing an especially advantageous effect in the processing of silver halide emulsions containing a hydrazine compound to achieve lith quality, and high dot quality in a stable development solution.

US Patent:

7534714, May 19, 2009

Filed:

May 5, 2006

Appl. No.:

11/418634

Inventors:

Lori Washington - Union City CA, US
Sandeep Nijhawan - Los Altos CA, US
David Carlson - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/28
H01L 21/3205

US Classification:

438604, 438483, 438486, 438509, 257E21172

Abstract:

Methods are disclosed of fabricating a compound nitride semiconductor structure. A substrate is disposed over a susceptor in a processing chamber, with the susceptor in thermal communication with the substrate. A group-III precursor and a nitrogen precursor are flowed into the processing chamber. The susceptor is heated with a nonuniform temperature profile to heat the substrate. A nitride layer is deposited over the heated substrate with a thermal chemical vapor deposition process within the processing chamber using the group-III precursor and the nitrogen precursor.

US Patent:

7758697, Jul 20, 2010

Filed:

Jan 3, 2008

Appl. No.:

11/969139

Inventors:

Paul B. Comita - Menlo Park CA, US
Lance A. Scudder - Santa Clara CA, US
David K. Carlson - Santa Clara CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C30B 21/02

US Classification:

117 91, 117 84, 117105

Abstract:

Methods for depositing a silicon-containing film are described. The methods may include delivering a silicon compound to a surface or a substrate, and reacting the silicon compound to grow the silicon-containing film. The silicon compound may be one or more compounds having a formula selected from the group SiX, SiX, SiX, and SiX, where X is independently a hydrogen or halogen.

US Patent:

20040126796, Jul 1, 2004

Filed:

Oct 7, 2003

Appl. No.:

10/679378

Inventors:

David Carlson - Gaithersburg MD, US
James Lazar - Bethesda MD, US
Michael Connolly - Ijamsville MD, US

International Classification:

C12Q001/68
C07H021/04
C12N001/08

US Classification:

435/006000, 435/270000, 536/025400

Abstract:

Methods and compositions are provided for extracting DNA from tissues, hair, teeth, bone, plant material, solid matrices and other samples from which DNA extraction is generally regarded as being difficult. DNA may quickly be extracted from samples, for example, in just 5 minutes to 2 hours, without enzymatic digestion or the use of toxic organic chemicals such as phenol, chloroform, guanidine thiocyanate or 2-mercaptoethanol.

US Patent:

20110306186, Dec 15, 2011

Filed:

Jun 8, 2011

Appl. No.:

13/156082

Inventors:

YI-CHIAU HUANG - Fremont CA, US
DAVID K. CARLSON - San Jose CA, US
ERROL ANTONIO C. SANCHEZ - Tracy CA, US
ZHIYUAN YE - San Jose CA, US

Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA

International Classification:

H01L 21/20
B08B 9/08

US Classification:

438478, 134 19, 257E2109

Abstract:

Methods for removing residue from interior surfaces of process chambers are provided herein. In some embodiments, a method of conditioning interior surfaces of a process chamber may include maintaining a process chamber at a first pressure and at a first temperature of less than about 800 degrees Celsius; providing a process gas to the process chamber at the first pressure and the first temperature, wherein the process gas comprises chlorine and nitrogen to remove residue disposed on interior surfaces of the process chamber; and increasing the pressure in the process chamber from the first pressure to a second pressure while continuing to provide the process gas to the process chamber.

US Patent:

20120217243, Aug 30, 2012

Filed:

Mar 21, 2012

Appl. No.:

13/426568

Inventors:

Erica Eden Cohen - New York NY, US
Kevin Harrity - Oak Creek WI, US
Jonathan N. Mandell - Gurnee IL, US
Nicholas Oxley - New York NY, US
Thomas A. Renner - Racine WI, US
Brad P. Baranowski - Racine WI, US
David R. Carlson - Cedarburg WI, US
Christopher S. Hoppe - Milwaukee WI, US

International Classification:

B65D 51/00
B67D 7/06

US Classification:

220200, 222183

Abstract:

A closure member for a shroud includes an annular wall and no more than one raised surface, interior of the annular wall, which extends upwardly beyond any other component of the closure member. The raised surface is configured to inhibit movement of a container both longitudinally and laterally when the annular wall is attached to a shroud with a container disposed therein.

US Patent:

62546864, Jul 3, 2001

Filed:

Aug 25, 2000

Appl. No.:

9/650098

Inventors:

Paul B. Comita - Menlo Park CA
David K. Carlson - Santa Clara CA
Norma B. Riley - Pleasanton CA
Doria W. Fan - San Francisco CA
Rekha Ranganathan - Sunnyvale CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118724

Abstract:

The present invention is a single wafer reactor having a vented lower liner for heating exhaust gas. The apparatus of the present invention includes a reaction chamber. A wafer support member which divides the chamber into an upper and lower portion is positioned within the chamber. A gas outlet for exhausting gas from the chamber has a vent to exhaust gas from the lower portion of the chamber and an exhaust passage opening to exhaust gas from the upper portion of the chamber. Heated inert purge gas is fed from the lower chamber portion through the vent at a rate so as to prevent the deposition gas from condensing in the exhaust passage.