David Allen Carlson

US Patent:

6368567, Apr 9, 2002

Filed:

Oct 7, 1998

Appl. No.:

09/167269

Inventors:

Paul B. Comita - Menlo Park CA
Rekha Ranganathan - Malden MA
David K. Carlson - Santa Clara CA
Dale R. DuBois - Los Gatos CA
Hali J. L. Forstner - Redwood City CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C01B 700

US Classification:

423240R, 423325, 423344, 423439, 423462

Abstract:

A method and an apparatus is provided for removing wafer processing by-products from gas fluid exhaust systems utilizing an energy source placed within an exhaust channel either alone or in combination with a cleaning gas. The placement of the energy source in an exhaust channel enables emitted energy to react with wafer processing by-products to convert the by-product residues to more removable forms. Additionally provided is a cleaning gas source internal to the exhaust channel to further react with and convert exiting by-product residues to gaseous fluids.

US Patent:

6376387, Apr 23, 2002

Filed:

Jul 9, 1999

Appl. No.:

09/350805

Inventors:

David K Carlson - Santa Clara CA
Paul B. Comita - Menlo Park CA
Norma B. Riley - Pleasanton CA
Dale R. Du Bois - Los Gatos CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21302

US Classification:

438716, 438478, 438481, 438492, 438723, 438762, 438770, 156345

Abstract:

According to one aspect of the invention, a method of processing a wafer is provided. The wafer is located in a wafer processing chamber of a system for processing a wafer. A silicon layer is then formed on the wafer while the wafer is located in the wafer processing chamber. The wafer is then transferred from the wafer processing chamber to a loadlock chamber of the system. Communication between the processing chamber and the loadlock chamber is closed off. The wafer is then exposed to ozone gas while located in the loadlock chamber, whereafter the wafer is removed from the loadlock chamber out of the system.

US Patent:

6436194, Aug 20, 2002

Filed:

Feb 16, 2001

Appl. No.:

09/788121

Inventors:

David K. Carlson - Santa Clara CA
Dale R. Du Bois - Los Gatos CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118720, 118715, 118719, 438478

Abstract:

A system for processing a wafer is provided. Ultraviolet light radiates through a first amount of oxygen gas in an ozone generation chamber so that the first amount of oxygen gas is converted to a first amount of ozone gas. The first amount of ozone gas flows from the ozone generation chamber into a loadlock chamber and a wafer is exposed to the first amount of ozone gas. The ultraviolet light also radiates through a window and then through a second amount of oxygen gas in the loadlock chamber so that the second amount of unconverted gas is converted to a second amount of ozone gas. The wafer held by the wafer holder is also exposed to the second amount of ozone gas.

US Patent:

6455814, Sep 24, 2002

Filed:

Nov 7, 2001

Appl. No.:

10/007852

Inventors:

Arkadii V. Samoilov - Sunnyvale CA
Dale R. DuBois - Los Gatos CA
Lance A. Scudder - Santa Clara CA
Paul B. Comita - Menlo Park CA
Lori D. Washington - Union City CA
David K. Carlson - Santa Clara CA
Roger N. Anderson - Sunnyvale CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

F27B 514

US Classification:

219390, 219405, 219411, 392416, 118724, 118725, 118 501

Abstract:

An apparatus that includes a reflector having a mirrored surface facing down, a glass structure located beneath the reflector, a susceptor within the glass structure having a surface facing up that is capable of holding a part to be processed, and one or more radiant heat sources directed at and located beneath the glass structure.

US Patent:

6476362, Nov 5, 2002

Filed:

Sep 12, 2000

Appl. No.:

09/660565

Inventors:

Thomas E. Deacon - Sunnyvale CA
Roger N. Anderson - Sunnyvale CA
David K. Carlson - Santa Clara CA
Paul Comita - Menlo Park CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

F27B 514

US Classification:

219390, 219405, 219411, 392416, 392418, 118724, 118 501

Abstract:

A lamp array for a thermal processing chamber. The lamp array includes a plurality of lamps arranged in a generally circular array. The plurality of lamps can be arranged in one or more concentric rings to form a generally circular array. Additional lamp arrays can be provided adjacent the circumference of the circular array or outermost concentric ring to provide a generally rectangular heating pattern. At least one row of lamps can be provided tangentially to the circular portion of the lamp array to provide preheating or postheating of process gases in the flow direction of a rectangular processing chamber.

US Patent:

6489220, Dec 3, 2002

Filed:

May 6, 2002

Appl. No.:

10/140584

Inventors:

David K. Carlson - Santa Clara CA
Dale R. Du Bois - Los Gatos CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2120

US Classification:

438478, 438770, 438787

Abstract:

A system for processing a wafer is provided. Ultraviolet light radiates through a first amount of oxygen gas in an ozone generation chamber so that the first amount of oxygen gas is converted to a first amount of ozone gas. The first amount of ozone gas flows from the ozone generation chamber into a loadlock chamber and a wafer is exposed to the first amount of ozone gas. The ultraviolet light also radiates through a window and then through a second amount of oxygen gas in the loadlock chamber so that the second amount of unconverted gas is converted to a second amount of ozone gas. The wafer held by the wafer holder is also exposed to the second amount of ozone gas.

US Patent:

6494959, Dec 17, 2002

Filed:

Jan 28, 2000

Appl. No.:

09/493694

Inventors:

Arkadii V. Samoilov - Sunnyvale CA
Dale R. DuBois - Los Gatos CA
Bradley M. Curelop - San Jose CA
David R. Carlson - Santa Clara CA
Paul B. Comita - Menlo Park CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23G 100

US Classification:

134 2, 134 11, 134 31, 216 74, 216 79, 438906

Abstract:

A low pressure-high hydrogen flow rate process of cleaning a silicon wafer surface is described. The combination of process pressures below about 1 Torr with hydrogen flow rates up to about 3 SLM has been found to remove substantially all oxygen contamination from the silicon wafer surface at process temperatures less than about 800Â C. without the use of a reactive gas. After processing at such process pressures and flow rates, even lower levels of oxygen contamination may be achieved by then increasing the process pressure, the hydrogen flow rate, and the process temperature, though the process temperature still remains less than 800Â C. The combination of low pressure and high hydrogen flow rate can be achieved using a vacuum pumping speed of at least 30 cubic meters per hour. The present invention also describes an apparatus for cleaning a silicon wafer surface in which the processes of the present invention and other processes can be practiced.

US Patent:

6500734, Dec 31, 2002

Filed:

Jun 2, 1999

Appl. No.:

09/325597

Inventors:

Roger N. Anderson - San Jose CA
Peter W. Hey - San Jose CA
David K. Carlson - Santa Clara CA
Mahalingam Venkatesan - San Jose CA
Norma Riley - Pleasanton CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2120

US Classification:

438478, 438492

Abstract:

A system for supplying processing fluid to a substrate processing apparatus having walls, the inner surfaces of which define a processing chamber in which a substrate supporting susceptor is located. The system consists of a number of fluid storages, each which stores a separate processing fluid, at least two fluid conduits along which processing fluid flows from the fluid storages to the processing apparatus and a fluid inlet which connects the fluid conduits to the processing chamber. The inlet has a separate fluid passage, corresponding to each of the fluid conduits, formed along it. Each fluid passage opens at or near an inner surface of a wall to define a fluid mixing zone, so that fluid moving along one fluid passage is prevented from mixing with fluid moving along any other passage until reaching the mixing zone.