David C Devlin

US Patent:

60397926, Mar 21, 2000

Filed:

Jun 22, 1998

Appl. No.:

9/102234

Inventors:

Narasimhan Calamur - Lemont IL
Martin E. Carrera - Naperville IL
David J. Devlin - Los Alamos NM
Tom Archuleta - Espanola NM

Assignee:

Regents of the University of California and BP Amoco Corporation - Chicago IL

International Classification:

B01D 5322

US Classification:

95 45

Abstract:

The present invention relates to an improved method and apparatus for separating one or more condensable compounds from a mixture of two or more gases of differing volatilities by capillary fractionation in a membrane-type apparatus, and a method of forming porous structures therefor. More particularly, the invention includes methods of forming and using an apparatus consisting, at least in part, of a porous structure having capillary-type passages extending between a plurality of small openings on the first side and larger openings on a second side of the structure, the passages being adapted to permit a condensed liquid to flow therethrough substantially by capillary forces, whereby vapors from the mixture are condensed, at least in part, and substantially in and adjacent to the openings on the first side, and are caused to flow in a condensed liquid state, substantially in the absence of vapor, from the openings on the first side to the openings on the second side.

US Patent:

58768084, Mar 2, 1999

Filed:

Mar 13, 1997

Appl. No.:

8/816321

Inventors:

Lauren A. Hall - Hacienda Heights CA
David J. Devlin - Los Alamos NM
David C. Smith - Santa Clara CA

Assignee:

The Regents of the University of California - Los Alamos NM

International Classification:

H05H 120
H05H 130

US Classification:

427573

Abstract:

A plasma enhanced chemical vapor deposition process for depositing a titanium nitride film on a polymeric substrate is provided, the process including placing the polymeric substrate within a chemical vapor deposition chamber evacuated to a pressure within a range of from about 0. 1 Torr to about 10 Torr, heating the polymeric substrate to a temperature within a range of from about 150. degree. C. to about 250. degree. C. , introducing a vaporized organometallic compound and ammonia gas into the chamber, generating a plasma within the chamber, and, maintaining the polymeric substrate within the chamber for a time sufficient for a layer of titanium nitride to deposit upon the polymeric substrate.