David M Ford

US Patent:

6362021, Mar 26, 2002

Filed:

Feb 2, 2001

Appl. No.:

09/776514

Inventors:

David H. Ford - Wilmington DE
Allen M. Barnett - Newark DE
Robert B. Hall - Newark DE
James A. Rand - Landenberg PA

Assignee:

AstroPower, Inc. - Newark DE

International Classification:

H01L 31068

US Classification:

438 97, 136258, 136256, 136261, 257 64, 257461, 257465, 257459, 257431, 427588, 427578, 427 74, 427 58, 438488, 438166, 438487, 423348

Abstract:

A polycrystalline film of silicon including silicon grains having an aspect ratio, d/t, of more than 1:1, wherein âdâ is the grain diameter and âtâ is the grain thickness. The polycrystalline film of silicon can be used to form an electronic device, such as a monolithically integrated solar cell having ohmic contacts formed on opposed surfaces or on the same surface of the film. A plurality of solar cells can be monolithically integrated to provide a solar cell module that includes an electrically insulating substrate and at least two solar cells disposed on the substrate in physical isolation from one another. Methods for manufacturing the film, solar cell and solar cell module are also disclosed. The simplified structure and method allow for substantial cost reduction on a mass-production scale, at least in part due to the high aspect ratio silicon grains in the film.

US Patent:

6420643, Jul 16, 2002

Filed:

Feb 2, 2001

Appl. No.:

09/776583

Inventors:

David H. Ford - Wilmington DE
Allen M. Barnett - Newark DE
Robert B. Hall - Newark DE
James A. Rand - Landenberg PA

Assignee:

AstroPower, Inc. - Newark DE

International Classification:

H01L 31042

US Classification:

136244, 136249, 136251, 136255, 136256, 136261, 136252, 257433, 257461, 257443, 257454, 257457, 257459

Abstract:

A polycrystalline film of silicon including silicon grains having an aspect ratio, d/t, of more than 1:1, wherein âdâ is the grain diameter and âtâ is the grain thickness. The polycrystalline film of silicon can be used to form an electronic device, such as a monolithically integrated solar cell having ohmic contacts formed on opposed surfaces or on the same surface of the film. A plurality of solar cells can be monolithically integrated to provide a solar cell module that includes an electrically insulating substrate and at least two solar cells disposed on the substrate in physical isolation from one another. Methods for manufacturing the film, solar cell and solar cell module are also disclosed. The simplified structure and method allow for substantial cost reduction on a mass-production scale, at least in part due to the high aspect ratio silicon grains in the film.

US Patent:

62114557, Apr 3, 2001

Filed:

Jul 1, 1999

Appl. No.:

9/345862

Inventors:

David H. Ford - Wilmington DE
Allen M. Barnett - Newark DE
Robert B. Hall - Newark DE
James A. Rand - Landenberg PA

Assignee:

Astropower - Newark DE

International Classification:

H01L 31068
H01L 310368
H01L 27142
H01L 310392

US Classification:

136258

Abstract:

A polycrystalline film of silicon including silicon grains having an aspect ratio, d/t, of more than 1:1, wherein "d" is the grain diameter and "t" is the grain thickness. The polycrystalline film of silicon can be used to form an electronic device, such as a monolithically integrated solar cell having ohmic contacts formed on opposed surfaces or on the same surface of the film. A plurality of solar cells can be monolithically integrated to provide a solar cell module that includes an electrically insulating substrate and at least two solar cells disposed on the substrate in physical isolation from one another. Methods for manufacturing the film, solar cell and solar cell module are also disclosed. The simplified structure and method allow for substantial cost reduction on a mass-production scale, at least in part due to the high aspect ratio silicon grains in the film.