David E Grider

US Patent:

6830945, Dec 14, 2004

Filed:

Mar 12, 2003

Appl. No.:

10/386960

Inventors:

Jeong Sun Moon - Chatsworth CA
Paul Hashimoto - Los Angeles CA
Wah S. Wong - Montebello CA
David E. Grider - Charlotte NC

Assignee:

HRL Laboratories, LLC - Malibu CA

International Classification:

H01L 2100

US Classification:

438 22, 438 94

Abstract:

A method for fabricating a non-planar heterostructure field effect transistor using group III-nitride materials with consistent repeatable results is disclosed. The method provides a substrate on which at least one layer of semiconductor material is deposited. An AlN layer is deposited on the at least one layer of semiconductor material. A portion of the AlN layer is removed using a solvent to create a non-planar region with consistent and repeatable results. The at least one layer beneath the AlN layer is insoluble in the solvent and therefore acts as an etch stop, preventing any damage to the at least one layer beneath the AlN layer. Furthermore, should the AlN layer incur any surface damage as a result of the reactive ion etching, the damage will be removed when exposed to the solvent to create the non-planar region.

US Patent:

7026665, Apr 11, 2006

Filed:

Oct 20, 2003

Appl. No.:

10/689979

Inventors:

Joseph Smart - Mooresville NC, US
Brook Hosse - Huntersville NC, US
Shawn Gibb - Charlotte NC, US
David Grider - Huntersville NC, US
Jeffrey Shealy - Huntersville NC, US

Assignee:

RF Micro Devices, Inc. - Greensboro NC

International Classification:

H01L 31/072
H01L 31/109

US Classification:

257190, 257189, 257194

Abstract:

The present invention relates to a high voltage and high power gallium nitride (GaN) transistor structure. In general, the GaN transistor structure includes a sub-buffer layer that serves to prevent injection of electrons into a substrate during high voltage operation, thereby improving performance of the GaN transistor structure during high voltage operation. Preferably, the sub-buffer layer is aluminum nitride, and the GaN transistor structure further includes a transitional layer, a GaN buffer layer, and an aluminum gallium nitride Schottky layer.

US Patent:

7033961, Apr 25, 2006

Filed:

Jul 15, 2003

Appl. No.:

10/620205

Inventors:

Joseph Smart - Morrisville NC, US
Brook Hosse - Huntersville NC, US
Shawn Gibb - Charlotte NC, US
David Grider - Huntersville NC, US
Jeffrey B. Shealy - Huntersville NC, US

Assignee:

RF Micro Devices, Inc. - Greensboro NC

International Classification:

H01L 21/26

US Classification:

438796, 438 46, 438795

Abstract:

The present invention relates to an epitaxial structure having one or more structural epitaxial layers, including a gallium nitride (GaN) layer, which is deposited on a substrate, and a method of growing the epitaxial structure, wherein the structural epitaxial layers can be separated from the substrate. In general, a sacrificial epitaxial layer is deposited on the substrate between the substrate and the structural epitaxial layers, and the structural epitaxial layers are deposited on the sacrificial layer. After growth, the structural epitaxial layers are separated from the substrate by oxidizing the sacrificial layer. The structural epitaxial layers include a nucleation layer deposited on the sacrificial layer and a gallium nitride layer deposited on the nucleation layer. Optionally, the oxidation of the sacrificial layer may also oxidize the nucleation layer.

US Patent:

7052942, May 30, 2006

Filed:

Oct 20, 2003

Appl. No.:

10/689980

Inventors:

Joseph Smart - Mooresville NC, US
David Grider - Huntersville NC, US
Shawn Gibb - Charlotte NC, US
Brook Hosse - Huntersville NC, US
Jeffrey Shealy - Huntersville NC, US

Assignee:

RF Micro Devices, Inc. - Greensboro NC

International Classification:

H01L 21/84
H01L 21/338
H01L 31/0328

US Classification:

438162, 438172, 257194

Abstract:

The present invention relates to passivation of a gallium nitride (GaN) structure before the GaN structure is removed from an epitaxial growth chamber. The GaN structure includes one or more structural epitaxial layers deposited on a substrate, and the passivation layer deposited on the structural epitaxial layers. In general, the passivation layer is a dielectric material deposited on the GaN structure that serves to passivate surface traps on the surface of the structural epitaxial layers. Preferably, the passivation layer is a dense, thermally deposited silicon nitride passivation layer.

US Patent:

7247893, Jul 24, 2007

Filed:

Sep 1, 2004

Appl. No.:

10/932811

Inventors:

Jeong Sun Moon - Chatsworth CA, US
Paul Hashimoto - Los Angeles CA, US
Wah S. Wong - Montebello CA, US
David E. Grider - Charlotte NC, US

Assignee:

HRL Laboratories, LLC - Malibu CA

International Classification:

H01L 29/20

US Classification:

257200, 257194, 257201, 257E29249, 438167, 438172

Abstract:

A method for fabricating a non-planar heterostructure field effect transistor using group III-nitride materials with consistent repeatable results is disclosed. The method provides a substrate on which at least one layer of semiconductor material is deposited. An AlN layer is deposited on the at least one layer of semiconductor material. A portion of the AlN layer is removed using a solvent to create a non-planar region with consistent and repeatable results. The at least one layer beneath the AlN layer is insoluble in the solvent and therefore acts as an etch stop, preventing any damage to the at least one layer beneath the AlN layer. Furthermore, should the AlN layer incur any surface damage as a result of the reactive ion etching, the damage will be removed when exposed to the solvent to create the non-planar region.

US Patent:

7408182, Aug 5, 2008

Filed:

Apr 4, 2006

Appl. No.:

11/397279

Inventors:

Joseph Smart - Mooresville NC, US
David Grider - Huntersville NC, US
Shawn Gibb - Charlotte NC, US
Brook Hosse - Huntersville NC, US
Jeffrey Shealy - Huntersville NC, US

Assignee:

RF Micro Devices, Inc. - Greensboro NC

International Classification:

H01L 29/06
H01L 29/26

US Classification:

257 13, 257 79, 257194, 257E29246, 257E33001, 257E33034, 257E21403, 257E21407

Abstract:

The present invention relates to passivation of a gallium nitride (GaN) structure before the GaN structure is removed from an epitaxial growth chamber. The GaN structure includes one or more structural epitaxial layers deposited on a substrate, and the passivation layer deposited on the structural epitaxial layers. In general, the passivation layer is a dielectric material deposited on the GaN structure that serves to passivate surface traps on the surface of the structural epitaxial layers. Preferably, the passivation layer is a dense, thermally deposited silicon nitride passivation layer.

US Patent:

7459356, Dec 2, 2008

Filed:

Feb 23, 2006

Appl. No.:

11/360734

Inventors:

Joseph Smart - Mooresville NC, US
Brook Hosse - Huntersville NC, US
Shawn Gibb - Charlotte NC, US
David Grider - Huntersville NC, US
Jeffrey Shealy - Huntersville NC, US

Assignee:

RF Micro Devices, Inc. - Greensboro NC

International Classification:

H01L 21/338

US Classification:

438172, 438167, 257194

Abstract:

The present invention relates to a high voltage and high power gallium nitride (GaN) transistor structure. In general, the GaN transistor structure includes a sub-buffer layer that serves to prevent injection of electrons into a substrate during high voltage operation, thereby improving performance of the GaN transistor structure during high voltage operation. Preferably, the sub-buffer layer is aluminum nitride, and the GaN transistor structure further includes a transitional layer, a GaN buffer layer, and an aluminum gallium nitride Schottky layer.

US Patent:

7514759, Apr 7, 2009

Filed:

Apr 11, 2005

Appl. No.:

11/104395

Inventors:

Sarabjit Mehta - Calabasas CA, US
David E. Grider - Charlotte NC, US
Wah S. Wong - Montebello CA, US

Assignee:

HRL Laboratories, LLC - Malibu CA

International Classification:

H01L 29/84
H01L 21/00

US Classification:

257416, 438 55

Abstract:

A process for fabricating a combined micro electromechanical/gallium nitride structure. The micro electromechanical structure comprises a piezoelectric device, such as a piezoelectric switch or a bulk acoustic wave device. According to the process, high Q compact bulk acoustic wave resonators can be built. The process is applicable to technologies such as tunable planar filter technology, amplifier technology and high speed analog-to-digital converters.