David Ray Heinz

age ~65

from Huntington Beach, CA

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David Heinz Phones & Addresses

Method Of Forming A Composite Structure
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US Patent:

39461246, Mar 23, 1976
Filed:

Mar 2, 1972
Appl. No.:

5/233832
Inventors:

Jack E. Mee - Anaheim CA
David M. Heinz - Orange CA
Thomas N. Hamilton - Fullerton CA
Paul J. Besser - Mission Viejo CA
George R. Pulliam - Anaheim CA
Assignee:

Rockwell International Corporation - El Segundo CA
International Classification:

H01F 1002
US Classification:

427 8
Abstract:

A composite consisting of multiple layer structures, the basic structure of which is a chemically vapor deposited film on a substrate wafer is, disclosed herein. The film is of material which is appropriate for creating therein single wall magnetic domains which are capable of being moved about in predetermined directions within the thickness of the film and in the plane of the film. Devices are adapted to the film for sensing the motion of these domains, thereby enabling application of these structures to circuits which may be particularly utilized in memory or logic applications. A complete family of film on substrate materials is fabricated through a unique process. One of the steps of the process relates to the establishment within a reactor of the exact location of the substrate upon which deposition of the film is to be made. This is done in order to obtain desired film characteristics. Included are provisions for making multiple film layers as a matrix of films and hence a multitude of such circuits.

Epitaxial, Sodium-Substituted Lithium Ferrite Films
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US Patent:

40937810, Jun 6, 1978
Filed:

May 27, 1975
Appl. No.:

5/580641
Inventors:

David M. Heinz - Orange CA
Eugene C. Whitcomb - Mission Viejo CA
Assignee:

Rockwell International Corporation - El Segundo CA
International Classification:

B01J 1736
US Classification:

428539
Abstract:

A new magnetic microwave composite, a smooth monocrystalline substituted lithium ferrite (Li. sub. 1-x Na. sub. x Fe. sub. 5 O. sub. 8) film on a monocrystalline magnesium oxide substrate is disclosed. Lithium ferrite films may be epitaxially grown on magnesium oxide substrates with excellent lattice matching by partial substitution of sodium for the lithium to increase the lattice constant of the lithium ferrite to match that of magnesium oxide.

Method For Producing Single Crystal Films
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US Patent:

39820491, Sep 21, 1976
Filed:

Jul 15, 1974
Appl. No.:

5/488360
Inventors:

Jack E. Mee - Anaheim CA
Thomas N. Hamilton - Fullerton CA
John L. Archer - Ames IA
David M. Heinz - Orange CA
Assignee:

Rockwell International Corporation - El Segundo CA
International Classification:

C23C 1108
H01F 134
US Classification:

427128
Abstract:

The reaction zone for the deposition of a metal oxide film on a crystal substrate inside a reaction chamber is shifted during a chemical vapor deposition process by the systematic control of the process parameters of the system.

Garnet Bubble Domain Material Utilizing Lanthanum And Lutecium As Substitution Elements To Yields High Wall Mobility And High Uniaxial Anisotropy
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US Patent:

39950930, Nov 30, 1976
Filed:

Mar 3, 1975
Appl. No.:

5/554804
Inventors:

David M. Heinz - Orange CA
Assignee:

Rockwell International Corporation - El Segundo CA
International Classification:

G11C 1114
US Classification:

428539
Abstract:

The invention is a substituted garnet bubble domain material in which lutecium and lanthanum have been substituted for yttrium. This material has a high growth-induced uniaxial anisotropy (K. sub. u. sup. G).

Epitaxial Growth Of M-Type Hexagonal Ferrite Films On Spinel Substrates And Composite
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US Patent:

41895215, Feb 19, 1980
Filed:

Jul 5, 1977
Appl. No.:

5/812862
Inventors:

Howard L. Glass - Orange CA
Frederick S. Stearns - Placentia CA
David M. Heinz - Orange CA
Assignee:

Rockwell International Corporation - El Segundo CA
International Classification:

C04B 3500
US Classification:

428539
Abstract:

M-type hexagonal ferrites whose prototype chemical formula (BaFe. sub. 12 O. sub. 19) contains no zinc and W-type hexagonal ferrites whose prototype chemical formula is (BaZn. sub. 2 Fe. sub. 16 O. sub. 27) can be successfully grown by LPE on spinel substrates having appropriate lattice parameters when controlled quantities of the zinc are present in the melts from which these hexagonal ferrites are grown. Using this growth technique, composites comprising a monocrystalline magnetic M-type or W-type hexagonal ferrite film on a non-magnetic single crystalline spinel substrate are provided.