David W Herman

US Patent:

7728265, Jun 1, 2010

Filed:

Mar 26, 2007

Appl. No.:

11/729088

Inventors:

Michael A. Deeds - Port Tobacco MD, US
David Herman - Charlotte NC, US

Assignee:

The United States of America as represented by the Secretary of the Navy - Washington DC

International Classification:

F41G 7/00
F42B 12/20

US Classification:

244 321, 244 329, 244198, 2441993, 244213, 102501, 102490

Abstract:

A MEMS type flow actuated out-of-plane flap apparatus includes a substrate defining a plane; a duct attached to the substrate, the duct and the substrate defining a fluid flow channel; and a rotatable flap having a flow receiving portion and an extension portion. The flow receiving portion being disposed in the fluid flow channel where, in an actuated position of the flap, a fluid flow against the flow receiving portion causes rotation of the flap and movement of the extension portion out of the plane of the substrate.

US Patent:

41831349, Jan 15, 1980

Filed:

Dec 11, 1978

Appl. No.:

5/968529

Inventors:

Harry G. Oehler - Glen Burnie MD
David S. Herman - Columbia MD
James R. Cricchi - Catonsville MD

Assignee:

Westinghouse Electric Corp. - Pittsburgh PA

International Classification:

H01L 2122
H01L 2126

US Classification:

29571

Abstract:

Described herein a technique for constructing a complementary MOS device on a sapphire substrate so that the surface of the device is planarized, the P-channel and N-channel devices are in substantially correct registration, the threshold voltage for the back-channel leakage effect inherent in sapphire substrate device to occur is increased, and the areas of gate oxidation are pseudo self-aligned so as to minimize overlap of the gate oxide with the source and drain regions.