Northwestern University - Kellogg School of Management 1989 - 1992
MBA, Strategy, Finance, Org Behavior
Dominican University
Bachelor of Science (B.S.)
Colorado State University 1987 - 1991
Colorado State University 1982 - 1985
Masters, Physics
University of Notre Dame 1975 - 1979
Bachelors, Bachelor of Science, Chemistry
Skills:
Technical Marketing Product Development Engineering Reliability Engineering Radiation Detectors Radiation Effects Patent Searching Patent Preparation Patent Portfolio Analysis Electronics Mixed Signal Semiconductors Ic Systems Engineering Integrated Circuits Application Specific Integrated Circuits Semiconductor Industry Cross Functional Team Leadership Product Management
Tradavo 2016 - 2016
Customer Service Representative
Safeco Insurance 2012 - 2016
Inside Auto Claims Representative
Red Robin Feb 2003 - Mar 2012
Server and Bartender
Feb 2003 - Mar 2012
Forklift Operator
Education:
University of Colorado May 2010
Bachelors, Bachelor of Arts
University of Colorado Colorado Springs 2007 - 2010
Bachelors, Bachelor of Arts, Media Studies, Communication
Skills:
Customer Service Leadership Microsoft Office Public Speaking Customer Satisfaction Event Planning Social Media Management Social Networking Time Management Powerpoint Microsoft Excel Event Management Social Media Marketing Microsoft Word Research Claims Handling Claims Resolution Claims Investigations Insurance Claims Auto Claims Statement Taking Conflict Resolution Conflict Analysis Conflict Prevention Google Docs Gmail Salesforce.com Salesforce.com Administration Placing Orders Special Orders Work Orders Volunteering Craft Beer Sales
Richard L. Woodruff - Fort Collins CO Scott M. Tyson - Albuquerque NM John T. Chaffee - Colorado Springs CO David B. Kerwin - Colorado Springs CO
Assignee:
Aeroflex UTMC Microelectronics, Inc. - Colorado Springs CO
International Classification:
H01L 21336
US Classification:
438449, 438289, 438299, 438450, 438453
Abstract:
A method for manufacturing a radiation hardened semiconductor device, having defined active region and isolation region. The isolation region containing an isolation material and active region containing a transition region between active and isolation region, sometimes denoted a birds beak region. Wherein the transition region is implanted with germanium and boron, to prevent formation of leakage paths between active devices, or within an active device. The implanted area can be further limited to that area of the transition region that is adapted to be covered by a gate material, such as polysilicon.
Richard L. Woodruff - Fort Collins CO, US Scott M. Tyson - Albuquerque NM, US John T. Chaffee - Colorado Springs CO, US David B. Kerwin - Colorado Springs CO, US
Assignee:
Aeroflex Colorado Springs, Inc. - Colorado Springs CO
International Classification:
H01L021/336
US Classification:
438449, 438289
Abstract:
A method for manufacturing a radiation hardened semiconductor device, having defined active region and isolation region. The isolation region containing an isolation material and active region containing a transition region between active and isolation region, sometimes denoted a bird's beak region. Wherein the transition region is implanted with germanium and boron, to prevent formation of leakage paths between active devices, or within an active device. The implanted area can be further limited to that area of the transition region that is adapted to be covered by a gate material, such as polysilicon.
Radiation Hardening Method For Shallow Trench Isolation In Cmos
A radiation-hardened STI process includes implanting a partially formed wafer with a fairly large dose (10to 10ions/cm) of a large atom group III element, such as B, Al, Ga or In at an energy between about 30 and 500 keV. The implant is followed by an implant of a large group V element, such as P, As, Sb, or Bi using similar doses and energies to the group III element. The group V element compensates the group III element. The combination of the two large atoms decreases the diffusivity of small atoms, such as B, in the implanted areas. Furthermore, the combination of the group III and group V elements in roughly equal proportions creates recombination sites and electron traps in the field oxide, resulting in a radiation hardened semiconductor device.
Harry N. Gardner - Colorado Springs CO, US David Kerwin - Colorado Springs CO, US
Assignee:
Aeroflex UTMC Microelectronic Systems, Inc. - Colorado Springs CO
International Classification:
G11C017/00
US Classification:
365 94, 365103, 365104
Abstract:
A method of programming a radiation-hardened integrated circuit includes the steps of supplying a prototype device including an SRAM memory circuit or programmable key circuit to a customer, having the customer develop working data patterns in the field in the same manner as a reading and writing to a normal RAM memory, having the customer save the final debugged data pattern, delivering the data pattern to the factory, loading the customer-developed data pattern into memory, programming the customer-developed data pattern into a number of production circuits, irradiating the production circuits at a total dosage of between 300K and 1 Meg RAD to burn the data pattern into memory, and shipping the irradiated and programmed parts to the customer.
Harry N. Gardner - Colorado Springs CO, US David Kerwin - Colorado Springs CO, US
Assignee:
Aeroflex Colorado Springs Inc. - Colorado Springs CO
International Classification:
G11C 17/00
US Classification:
365 94, 365154, 365104
Abstract:
A method of programming a radiation-hardened integrated circuit includes the steps of supplying a prototype device including an SRAM memory circuit or programmable key circuit to a customer, having the customer develop working data patterns in the field in the same manner as a reading and writing to a normal RAM memory, having the customer save the final debugged data pattern, delivering the data pattern to the factory, loading the customer-developed data pattern into memory, programming the customer-developed data pattern into a number of production circuits, irradiating the production circuits at a total dosage of between 300K and 1 Meg RAD to burn the data pattern into memory, and shipping the irradiated and programmed parts to the customer.
Cross-Talk And Back Side Shielding In A Front Side Illuminated Photo Detector Diode Array
David B. Kerwin - Colorado Springs CO, US Rockford Curby - Sunnyvale CA, US
Assignee:
Aeroflex Colorado Springs Inc. - Colorado Springs CO
International Classification:
G01T 1/24
US Classification:
25037011
Abstract:
A front side illuminated photo detector array is shielded from X-ray cross-talk by filling the septa between individual photo detector diodes with a high atomic number material such as tungsten. The processing circuitry is also shielded from stray X-rays by a barrier such as tungsten placed between each photo detector diode and the processing circuitry. This barrier serves a dual role as shielding the processing circuitry from stray X-ray radiation and acting as the electrical contact between the detector diode and the circuitry.
Energy Sensitive Direct Conversion Radiation Detector
Aeroflex Colorado Springs Inc. - Colorado Springs CO
International Classification:
H01J 47/00
US Classification:
250389
Abstract:
An x-ray detector capable of directly converting x-ray radiation into electrical signals utilizes the radiation induced conductivity of various solid, electrically insulating materials. The detector is configured comprising one or more anodes and cathodes separated by various thicknesses of dielectric material wherein ionization occurs primarily in the electrodes of such detector structure. The radiation induced conductivity of the dielectric material can be modulated by controlling the size, orientation and composition of the electrodes and the dielectric materials as well as the electrical bias between anode and cathode.
Harry N. Gardner - Colorado Springs CO, US David Kerwin - Colorado Springs CO, US
Assignee:
Aeroflex UTMC Microelectronics Systems, Inc. - Colorado Springs CO
International Classification:
G11C 11/00
US Classification:
365154, 365156, 365104
Abstract:
A method of programming a radiation-hardened integrated circuit includes the steps of supplying a prototype device including an SRAM memory circuit or programmable key circuit to a customer, having the customer develop working data patterns in the field in the same manner as a reading and writing to a normal RAM memory, having the customer save the final debugged data pattern, delivering the data pattern to the factory, loading the customer-developed data pattern into memory, programming the customer-developed data pattern into a number of production circuits, irradiating the production circuits at a total dosage of between 300K and 1 Meg RAD to burn the data pattern into memory, and shipping the irradiated and programmed parts to the customer.
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