David Lyn Knowles

US Patent:

7471455, Dec 30, 2008

Filed:

Oct 28, 2005

Appl. No.:

11/261948

Inventors:

Palash P. Das - Vista CA, US
Albert P. Cefalo - San Diego CA, US
David S. Knowles - San Diego CA, US
Vitaliy Shklover - Koenigsbronn, DE
Holger Muenz - Aalen, DE

Assignee:

Cymer, Inc. - San Diego CA

International Classification:

G02B 27/10

US Classification:

359618, 359233

Abstract:

Systems and methods are disclosed for shaping a laser beam for interaction with a film in which the laser beam travels along a beam path and defines a short-axis and a long-axis. In one aspect, the system may include a first short-axis element having an edge positioned at a distance, d, along the beam path from the film and a second short-axis element having an edge positioned at a distance, d, along the beam path from the film, with d

US Patent:

20070251928, Nov 1, 2007

Filed:

May 1, 2006

Appl. No.:

11/381052

Inventors:

Brandon Turk - Escondido CA, US
David Knowles - San Diego CA, US

Assignee:

TCZ GmbH - San Diego CA

International Classification:

B23K 26/00

US Classification:

219121680, 219121690

Abstract:

In a thin beam directional Crystallization System configured anneal a silicon layer on a glass substrate uses a special laser beam profile with an intensity peak at one edge. The system is configured to entirely melt a spatially controlled portion of a silicon layer causing lateral crystal growth. By advancing the substrate or laser a certain step size and subjecting the silicon layer to successive “shots” rom the laser, the entire silicon layer is crystallized. The lateral crystal growth creates a protrusion in the center of the melt area. This protrusion must be re-melted. Accordingly, the step size must be such that there is sufficient overlap between successive shots, i.e., melt zones, to ensure the protrusion is melted. This requires the step size to be less than half the beam width. A smaller step size reduces throughput and increases costs. The special laser profile used in accordance with the systems and methods described herein can increase the step size and thereby increase throughput and reduce costs.

US Patent:

20080030877, Feb 7, 2008

Filed:

Aug 7, 2006

Appl. No.:

11/462915

Inventors:

Brandon A. Turk - Escondido CA, US
Bernd Burfeindt - Ramona CA, US
David S. Knowles - San Diego CA, US

Assignee:

TCZ GMBH - San Diego CA

International Classification:

G02B 3/02

US Classification:

359719

Abstract:

In a thin beam directional Crystallization System configured anneal a silicon layer on a glass substrate uses a special laser beam profile with an intensity peak at one edge. The system is configured to entirely melt a spatially controlled portion of a silicon layer causing lateral crystal growth. By advancing the substrate or laser a certain step size and subjecting the silicon layer to successive “shots” from the laser, the entire silicon layer is crystallized. The lateral crystal growth creates a protrusion in the center of the melt area. This protrusion must be re-melted. Accordingly, the step size must be such that there is sufficient overlap between successive shots, i.e., melt zones, to ensure the protrusion is melted. This requires the step size to be less than half the beam width. A smaller step size reduces throughput and increases costs. The special laser profile used in accordance with the systems and methods described herein can increase the step size and thereby increase throughput and reduce costs.

US Patent:

20120267348, Oct 25, 2012

Filed:

Apr 27, 2012

Appl. No.:

13/458572

Inventors:

Brandon A. Turk - Escondido CA, US
David S. Knowles - San Diego CA, US

Assignee:

TCZ LLC - San Diego CA

International Classification:

B23K 26/06

US Classification:

21912165

Abstract:

A thin beam directional crystallization system configured to process a substrate comprises a laser configured to produce laser light, the laser configured to have a high energy mode and a low energy mode. The high energy mode is configured to produce light energy sufficient to completely melt a substrate coated with amorphous silicon film, while the low energy mode is configured to produce light energy that is not sufficient to completely melt a substrate coated with amorphous silicon film. The system further comprises beam shaping optics configured to convert the laser light emitted from the laser into a long thin beam with a short axis and a long axis, a stage configured to support the substrate and film, and a translator coupled with the stage, the translator configured to advance the substrate and film so as to produce a step size in conjunction with the firing of the laser.

US Patent:

61477540, Nov 14, 2000

Filed:

Mar 17, 1997

Appl. No.:

8/820662

Inventors:

Gregory A. Theriault - Encinitas CA
Stephen H. Lieberman - La Mesa CA
David S. Knowles - San Diego CA
Leonard J. Martini - San Diego CA

Assignee:

The United States of America as represented by the Secretary of the Navy - Washington DC

International Classification:

G01J 3443
G01N 2163

US Classification:

356318

Abstract:

A LIBS cone penetrometer comprises a decoupling mirror to separate an excitation signal and a response signal, an optical fiber arranged with the decoupling mirror for receiving the excitation signal from an energy source and transmitting the response signal from a sample surface, and a cone penetrometer probe connected to the distal end of the optical fiber. The probe further comprises a collimating lens arranged with the optical fiber for collimating the excitation signal and for directing the response signal into the optical fiber. An internally reflecting prism is aligned with the collimating lens to deflect the excitation signal and the response signal between the collimating lens and the sample surface through a window in the side of the probe. A focusing lens is aligned with the prism and the window to reduce the spot size of the excitation signal and to collimate the response signal. The window is arranged with the focusing lens to maintain the distance between the focusing lens and the sample surface and to prevent outside matter from entering the probe.