David J Larkin

US Patent:

57097453, Jan 20, 1998

Filed:

Nov 6, 1995

Appl. No.:

8/554201

Inventors:

David J. Larkin - Valley City OH
Philip G. Neudeck - Cleveland OH
J. Anthony Powell - North Olmsted OH
Lawrence G. Matus - Amherst OH

Assignee:

Ohio Aerospace Institute - Brook Park OH

International Classification:

C30B 2308

US Classification:

117 96

Abstract:

A method of controlling the amount of impurity incorporation in a crystal grown by a chemical vapor deposition process. Conducted in a growth chamber, the method includes the controlling of the concentration of the crystal growing components in the growth chamber to affect the demand of particular growth sites within the growing crystal thereby controlling impurity incorporation into the growth sites.

US Patent:

59151943, Jun 22, 1999

Filed:

Jul 3, 1997

Appl. No.:

8/887804

Inventors:

J. Anthony Powell - North Olmsted OH
David J. Larkin - Valley City OH
Philip G. Neudeck - Olmsted Falls OH
Lawrence G. Matus - Amherst OH

Assignee:

The United States of America as represented by the Administrator of
National Aeronautics and Space Administration - Washington DC

International Classification:

H01L 21306

US Classification:

438478

Abstract:

A method of growing atomically-flat surfaces and high-quality low-defect crystal films of polytypic compounds heteroepitaxially on polytypic compound substrates that are different than the crystal film. The method is particularly suited for the growth of 3C-SiC, 2H-AlN, and 2H-GaN on 6H-SiC.

US Patent:

54639786, Nov 7, 1995

Filed:

Jul 18, 1994

Appl. No.:

8/276599

Inventors:

David J. Larkin - North Olmsted OH
Philip G. Neudeck - Strongsville OH
J. Anthony Powell - North Olmsted OH
Lawrence G. Matus - Amherst OH

Assignee:

Ohio Aerospace Institute - Brook Park OH

International Classification:

H01L 2120

US Classification:

117 89

Abstract:

A method of controlling the amount of impurity incorporation in a crystal grown by a chemical vapor deposition process. Conducted in a growth chamber, the method includes the controlling of the concentration of the crystal growing components in the growth chamber to affect the demand of particular growth sites within the growing crystal thereby controlling impurity incorporation into the growth sites.

US Patent:

53638000, Nov 15, 1994

Filed:

Nov 9, 1992

Appl. No.:

7/973505

Inventors:

David J. Larkin - Fairview Park OH

Assignee:

The United States of America as represented by the United States
National Aeronautics and Space Administration - Washington DC

International Classification:

H01L 21306
H01L 2120

US Classification:

117 95

Abstract:

This invention is a method for the controlled growth of single-crystal semiconductor-device-quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.

US Patent:

6165874, Dec 26, 2000

Filed:

Dec 16, 1998

Appl. No.:

9/252623

Inventors:

J. Anthony Powell - North Olmsted OH
David J. Larkin - Valley City OH
Philip G. Neudeck - Olmsted Falls OH
Lawrence G. Matus - Amherst OH

Assignee:

The United States of America as represented by the Administrator of the
National Aeronautics and Space Administration - Washington DC

International Classification:

H01L 21306

US Classification:

438478

Abstract:

A method of growing atomically-flat surfaces and high quality low-defect crystal films of semiconductor materials and fabricating improved devices thereon. The method is also suitable for growing films heteroepitaxially on substrates that are different than the film. The method is particularly suited for growth of elemental semiconductors (such as Si), compounds of Groups III and V elements of the Periodic Table (such as GaN), and compounds and alloys of Group IV elements of the Periodic Table (such as SiC).