David S Lyttle

US Patent:

20120280429, Nov 8, 2012

Filed:

May 2, 2011

Appl. No.:

13/098989

Inventors:

Bhuvaragasamy Ganesan Ravi - Nashua NH, US
Santhana Raghavan Parthasarathy - Nashua NH, US
David Lackey - Merrimack NH, US
Andre Andrukhiv - Hollis NH, US
David Lyttle - Amherst NH, US
Bala Bathey - Tewksbury MA, US
Carl Chartier - Manchester NH, US

Assignee:

GT SOLAR, INC. - Merrimack NH

International Classification:

C30B 28/06

US Classification:

264332, 425446

Abstract:

A crystal growth apparatus is disclosed comprising a crucible, optionally contained within a crucible box, on a crucible support block, wherein the bottom of the crucible, the bottom plate of the crucible box, if used, and/or the crucible support block comprise at least one cavity configured to circulate at least one coolant therein. Also disclosed is a method of preparing a crystalline material using the disclosed crystal growth apparatus as well as the resulting crystalline material, having larger overall grain sizes.

US Patent:

20210095392, Apr 1, 2021

Filed:

Sep 15, 2020

Appl. No.:

17/021691

Inventors:

- Hudson NH, US
Andriy M. Andrukhiv - Hollis NH, US
David S. Lyttle - Amherst NH, US

International Classification:

C30B 29/36
C30B 23/02
C30B 23/00

Abstract:

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material.

US Patent:

20210087706, Mar 25, 2021

Filed:

Nov 30, 2020

Appl. No.:

17/107103

Inventors:

- Hudson NH, US
Andriy M. Andrukhiv - Hollis NH, US
David S. Lyttle - Amherst NH, US

International Classification:

C30B 29/36
C30B 23/02

Abstract:

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material.

US Patent:

20210032770, Feb 4, 2021

Filed:

Oct 9, 2020

Appl. No.:

17/067040

Inventors:

- Hudson NH, US
Andriy M. Andrukhiv - Hollis NH, US
David S. Lyttle - Amherst NH, US

International Classification:

C30B 23/06
C30B 23/02
C30B 29/36

Abstract:

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material.

US Patent:

20200199777, Jun 25, 2020

Filed:

Feb 27, 2020

Appl. No.:

16/803037

Inventors:

- Hudson NH, US
Andriy M. Andrukhiv - Hollis NH, US
David S. Lyttle - Amherst NH, US

International Classification:

C30B 23/00
C30B 29/36

Abstract:

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material.

US Patent:

20150068445, Mar 12, 2015

Filed:

Sep 5, 2014

Appl. No.:

14/478432

Inventors:

- Merrimack NH, US
Andriy M. Andrukhiv - Hollis NH, US
David S. Lyttle - Amherst NH, US

International Classification:

C30B 23/06
C30B 29/36
C30B 23/02

US Classification:

117 84

Abstract:

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material.

US Patent:

20150068446, Mar 12, 2015

Filed:

Sep 5, 2014

Appl. No.:

14/478567

Inventors:

- Merrimack NH, US
Andriy M. Andrukhiv - Hollis NH, US
David S. Lyttle - Amherst NH, US

International Classification:

C30B 23/06
C30B 29/36
C30B 23/02

US Classification:

117 84, 118726, 156 60, 118728, 428408

Abstract:

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material.

US Patent:

20150068447, Mar 12, 2015

Filed:

Sep 5, 2014

Appl. No.:

14/478512

Inventors:

- Merrimack NH, US
Andriy M. Andrukhiv - Hollis NH, US
David S. Lyttle - Amherst NH, US

International Classification:

C30B 23/06
C30B 25/20
C30B 25/10
C30B 23/02

US Classification:

117 88, 117 84, 118726

Abstract:

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material.

Address:

PO Box 763, Amherst, NH 03031

Phone:

6033189066

VIN:

WA1DKAFP9CA003879

Make:

AUDI

Model:

Q5

Year:

2012

Address:

PO Box 763, Amherst, NH 03031

Phone:

6033189066

VIN:

WAUCFAFH2CN001038

Make:

AUDI

Model:

A5

Year:

2012