David R Maxwell

US Patent:

20120203664, Aug 9, 2012

Filed:

Feb 9, 2011

Appl. No.:

13/024276

Inventors:

Arthur Torossian - Glendale CA, US
David Maxwell - Los Angeles CA, US

Assignee:

TYCOON UNLIMITED, INC. - Vernon CA

International Classification:

G06Q 30/06

US Classification:

705 2641, 705 271

Abstract:

A wireless transaction processing system, comprising a member seller associated with a data that has a machine-readable representation, and a member buyer having at least an Internet enabled device that can access the wireless transaction processing system. The wireless transaction processing system, through the Internet enabled device of the buyer identifies the buyer, including buyer physical location, receives the machine-readable representation of the data, and displays the received data by the Internet enabled device of the buyer. The wireless transaction processing system wirelessly transmits the buyer information (including buyer location information) and received data for verification and approval of transaction between buyer and seller without exchange of confidential information between a buyer and a seller, and without requiring seller specialty equipment.

US Patent:

20120203666, Aug 9, 2012

Filed:

Apr 19, 2011

Appl. No.:

13/090191

Inventors:

Arthur Torossian - Glendale CA, US
David Maxwell - Los Angeles CA, US

Assignee:

TYCOON UNLIMITED, INC. - Vernon CA

International Classification:

G06Q 30/00

US Classification:

705 2641

Abstract:

A wireless transaction processing system that includes a seller associated with a transaction data, and a buyer having an Internet enabled device that can access an account associated with the wireless transaction processing system. The wireless transaction processing system, through the Internet enabled device of the buyer enables full processing of transactions without the use of physical cards.

US Patent:

42683483, May 19, 1981

Filed:

Aug 1, 1966

Appl. No.:

4/569368

Inventors:

David F. Allison - Palo Alto CA
David A. Maxwell - San Jose CA

Assignee:

Signetics Corporation - Sunnyvale CA

International Classification:

H01L 2122
H01L 21304
H01L 21308

US Classification:

156645

Abstract:

1. In a method for forming a semiconductor structure utilizing a semiconductor body, forming a grid structure in the semiconductor body, forming a support structure upon the grid structure, removing only a portion of the semiconductor body to provide a semiconductor body which has a substantially uniform thickness in the vicinity of the grid structure and in which the grid structure does not intercept the exposed surface of the semiconductor body, and forming additional grid structure in the semiconductor body joining the first named grid structure so that islands of semiconductor material are formed in the semiconductor body which are isolated from each other and from the support structure. 23. In a method for forming a semiconductor structure utilizing a semiconductor body having a surface, forming a layer of insulating material on the surface of the semiconductor body, forming a recessed grid in the layer of insulating material and extending into the semiconductor body, forming a layer of insulating material on the recessed grid adhering to said surface and having a depth which is insufficient to fill the recessed grid to form a grid structure in a semiconductor body prior to the formation of a semiconductor device in the semiconductor body, forming a support structure upon the grid structure, removing a portion of the semiconductor body and diffusing isolation fences into the semiconductor body which extend and make contact with the layer of insulating material to form a plurality of islands of semiconductor material isolated from each other and from the support structure.

US Patent:

41938364, Mar 18, 1980

Filed:

Jan 27, 1970

Appl. No.:

5/006057

Inventors:

Albert P. Youmans - Cupertino CA
David F. Allison - Los Altos CA
David A. Maxwell - San Jose CA

Assignee:

Signetics Corporation - Sunnyvale CA

International Classification:

H01L 21306

US Classification:

156657

Abstract:

Method for making a semiconductor structure having isolated islands of semiconductor material from a semiconductor body by forming a first layer of insulating material on a surface of the body having a first support structure upon the layer of insulating material and then forming grooves in the semiconductor body which extend to the layer of insulating material formed from the semiconductor body. A second layer of insulating material is then formed on the exposed surfaces of the islands. A second support structure is then formed on the second layer of insulating material. Thereafter, the first support structure is removed and circuit devices are fabricated in the isolated islands.

Address:

1062 Monica Ln, San Jose, CA 95128

Phone:

4082476355

VIN:

JHLRE3H79BC009134

Make:

HONDA

Model:

CR-V

Year:

2011

Address:

405 Rumsey Ct, San Jose, CA 95111

VIN:

1FTPW12567KC94532

Make:

FORD

Model:

F-150

Year:

2007