David Medeiros

US Patent:

6806026, Oct 19, 2004

Filed:

May 31, 2002

Appl. No.:

10/159635

Inventors:

Robert David Allen - San Jose CA
Gregory Breyta - San Jose CA
Phillip Brock - Sunnyvale CA
Richard A. DiPietro - Campbell CA
Debra Fenzel-Alexander - San Jose CA
Carl Larson - San Jose CA
David R. Medeiros - Kitchawan NY
Dirk Pfeiffer - Dobbs Ferry NY
Ratnam Sooriyakumaran - San Jose CA
Hoa D. Truong - San Jose CA
Gregory M. Wallraff - Morgan Hill CA

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03F 7039

US Classification:

4302701, 430311, 430325, 430326, 430327, 430907, 430323, 522154, 522156

Abstract:

A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula: where R represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF ) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R represents hydrogen (H), methyl (CH ), trifluoromethyl (CF ), difluoromethyl (CHF ), fluoromethyl (CH F), or a semi- or perfluorinated aliphatic chain; and where R represents trifluoromethyl (CF ), difluoromethyl (CHF ), fluoromethyl (CH F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.

US Patent:

7014980, Mar 21, 2006

Filed:

Aug 12, 2004

Appl. No.:

10/916934

Inventors:

Robert David Allen - San Jose CA, US
Gregory Breyta - San Jose CA, US
Phillip Brock - Sunnyvale CA, US
Richard A. DiPietro - Campbell CA, US
Debra Fenzel-Alexander - San Jose CA, US
Carl Larson - San Jose CA, US
David R. Medeiros - Kitchawan NY, US
Dirk Pfeiffer - Dobbs Ferry NY, US
Ratnam Sooriyakumaran - San Jose CA, US
Hoa D. Truong - San Jose CA, US
Gregory M. Wallraff - Morgan Hill CA, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03F 7/039
G03F 7/32
G03F 7/38
C08J 3/28

US Classification:

4302701, 430907, 522154, 522156, 526245

Abstract:

A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where Rrepresents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where Rrepresents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where Rrepresents hydrogen (H), methyl (CH), trifluoromethyl (CF), difluoromethyl(CHF), fluoromethyl (CHF), or a semi- or perfluorinated aliphatic chain; and where Rrepresents trifluoromethyl (CF), difluoromethyl (CHF), fluoromethyl (CHF), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.

US Patent:

7135595, Nov 14, 2006

Filed:

Jan 12, 2006

Appl. No.:

11/330659

Inventors:

Robert David Allen - San Jose CA, US
Gregory Breyta - San Jose CA, US
Phillip Brock - Sunnyvale CA, US
Richard A. DiPietro - Campbell CA, US
Debra Fenzel-Alexander - San Jose CA, US
Carl Larson - San Jose CA, US
David R. Medeiros - Kitchawan NY, US
Dirk Pfeiffer - Dobbs Ferry NY, US
Ratnam Sooriyakumaran - San Jose CA, US
Hoa D. Truong - San Jose CA, US
Gregory M. Wallraff - Morgan Hill CA, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

C08F 118/00
C08F 18/20
C08F 120/22
C07C 69/62
C07C 69/52

US Classification:

560220, 560219, 560223, 526245

Abstract:

A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula.

US Patent:

7300739, Nov 27, 2007

Filed:

May 29, 2003

Appl. No.:

10/449181

Inventors:

Robert David Allen - San Jose CA, US
Gregory Breyta - San Jose CA, US
Phillip Joe Brock - Sunnyvale CA, US
Richard A. DiPietro - Campbell CA, US
David R. Medeiros - Ossining NY, US
Ratnam Sooriyakumaran - San Jose CA, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03F 7/004
C08F 14/00
C08F 14/18

US Classification:

4302701, 526 72, 526242, 526244, 526245, 526247, 526246, 526250, 526251, 526254, 526281

Abstract:

The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.

US Patent:

7393624, Jul 1, 2008

Filed:

Jun 20, 2007

Appl. No.:

11/820862

Inventors:

Robert David Allen - San Jose CA, US
Gregory Breyta - San Jose CA, US
Phillip Joe Brock - Sunnyvale CA, US
Richard A. DiPietro - Campbell CA, US
David R. Medeiros - Ossining NY, US
Ratnam Sooriyakumaran - San Jose CA, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03C 1/00

US Classification:

4302701, 4302811, 430311, 526 72, 526242, 526244, 526245, 526247, 526246, 526250, 526251, 526254, 526281

Abstract:

The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.

US Patent:

7521172, Apr 21, 2009

Filed:

Apr 28, 2006

Appl. No.:

11/380782

Inventors:

Robert Allen David - San Jose CA, US
Phillip Joe Brock - Sunnyvale CA, US
Sean David Burns - Hopewell Junction NY, US
Dario Leonardo Goldfarb - Mohegan Lake NY, US
David Medeiros - Dobbs Ferry NY, US
Dirk Pfeiffer - Dobbs Ferry NY, US
Matt Pinnow - Woodbury MN, US
Ratnam Sooriyakumaran - San Jose CA, US
Linda Karin Sundberg - Los Gatos CA, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03F 7/20
G03F 7/26
C08F 220/22

US Classification:

4302701, 4302731, 526242, 526245, 526308, 526309, 526318

Abstract:

Disclosed is a topcoat composition comprising a polymer having a dissolution rate of at least 1500 Å/second in an aqueous alkaline developer, and at least one solvent. The topcoat composition can be used to coat a photoresist layer on a material layer on a substrate, for example, a semiconductor chip. Also disclosed is a method of forming a pattern in the material layer of the coated substrate.

US Patent:

7563558, Jul 21, 2009

Filed:

Oct 25, 2007

Appl. No.:

11/924005

Inventors:

Robert David Allen - San Jose CA, US
Gregory Breyta - San Jose CA, US
Phillip Joe Brock - Sunnyvale CA, US
Richard A. DiPietro - Campbell CA, US
David R. Medeiros - Ossining NY, US
Ratnam Sooriyakumaran - San Jose CA, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03F 7/00
G03F 7/004
C08F 214/18

US Classification:

4302701, 4302811, 526 72, 526242, 526244, 526245, 526246, 526247, 526250, 526251, 526254, 526281

Abstract:

The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.

US Patent:

7875408, Jan 25, 2011

Filed:

Jan 25, 2007

Appl. No.:

11/698182

Inventors:

John A. Hoffnagle - San Jose CA, US
David R. Medeiros - Kitchawan NY, US
Robert D. Miller - San Jose CA, US
Gregory M. Wallraff - Morgan Hill CA, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03F 7/00
G03F 7/004
G03F 7/031
G03F 7/075

US Classification:

430 19, 4302701, 4302731, 430905, 430945

Abstract:

Compositions comprising photobleachable organic materials can be bleached by 193 nm light, and brought back to their original state by stimuli after exposure. (reversible photobleaching). We use these compositions in art-known contrast enhancement layers and as a part of a photoresist, especially in optical lithography processes for semiconductor fabrication. They may comprise polymers such as organo-silicon polymers, polymers comprising polymers of aromatic hydroxyl compounds such as phenol and naphthol such as phenol formaldehyde polymers and naphthol formaldehyde polymers styrene polymers and phenolic acrylate polymers or cyclic materials comprising:.