David S Monk

US Patent:

6352874, Mar 5, 2002

Filed:

May 24, 1999

Appl. No.:

09/317734

Inventors:

Andrew C. McNeil - Scottsdale AZ
David J. Monk - Mesa AZ
Bishnu P. Gogoi - Scottsdale AZ

Assignee:

Motorola Inc. - Schaumburg IL

International Classification:

H01L 2128

US Classification:

438 53, 438251

Abstract:

A method of manufacturing a sensor includes forming a first electrode ( ), forming a sacrificial layer ( ) over the first electrode, and forming a layer ( ) over the sacrificial layer where a second electrode ( ) is located in the layer. The method further includes removing the sacrificial layer after forming the layer to form a cavity ( ) between the first and second electrodes and then sealing the cavity between the first and second electrodes. The layer is supported over the first electrode by a post ( ) in the cavity, and the second electrode is movable relative to the first electrode and is movable in response to a pressure external to the cavity.

US Patent:

6401545, Jun 11, 2002

Filed:

Jan 25, 2000

Appl. No.:

09/490927

Inventors:

David J. Monk - Mesa AZ
Song Woon Kim - Kyunggi-do, KR
Kyujin Jung - Kyunggi-do, KR
Bishnu Gogoi - Scottsdale AZ
Gordon Bitko - Phoenix AZ
Bill McDonald - Scottsdale AZ
Theresa A. Maudie - Phoenix AZ
Dave Mahadevan - Mesa AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

G01L 700

US Classification:

73756, 73715, 73754, 73706

Abstract:

Selective encapsulation of a micro electro-mechanical pressure sensor provides for protection of the wire bands ( ) through encapsulation while permitting the pressure sensor diaphragm ( ) to be exposed to ambient pressure without encumbrance or obstruction. Selective encapsulation is made possible by the construction of a protective dam ( ) around the outer perimeter of a pressure sensor diaphragm ( ) to form a wire bond cavity region between the protective dam ( ) and the device housing ( ). The wire bond cavity may be encapsulated with an encapsulation gel ( ) or by a vent cap ( ). Alternatively, the protective dam ( ) may be formed by a glass frit pattern ( ) bonding a cap wafer ( ) to a device wafer ( ) and then dicing the two-wafer combination into individual dies with protective dams attached.

US Patent:

6426239, Jul 30, 2002

Filed:

Jul 31, 2000

Appl. No.:

09/629611

Inventors:

Bishnu P. Gogoi - Scottsdale AZ
David J. Monk - Mesa AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 2100

US Classification:

438 53, 438 48, 438 50

Abstract:

A semiconductor component comprises a substrate ( ), a two flexible pressure sensor diaphragms ( ) supported by the substrate ( ), and a fixed electrode ( ) between the two diaphragms ( ). The two diaphragms ( ) and the fixed electrode ( ) are electrodes of two differential capacitors. The substrate ( ) has a hole (601) extending from one surface ( ) of the substrate ( ) to an opposite surface ( ) of the substrate ( ). The hole ( ) is located underneath the two diaphragms ( ), and the hole ( ) at the opposite surfaces ( ) of the substrate ( ) is preferably larger than the hole ( ) at an interior portion of the substrate ( ).

US Patent:

6472243, Oct 29, 2002

Filed:

Dec 11, 2000

Appl. No.:

09/734473

Inventors:

Bishnu P. Gogoi - Scottsdale AZ
David J. Monk - Mesa AZ
David W. Odle - Apache Junction AZ
Kevin D. Neumann - Chandler AZ
John E. Schmiesing - Tempe AZ
Andrew C. McNeil - Scottsdale AZ
Richard J. August - Scottsdale AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 2100

US Classification:

438 50, 438 22, 438 24, 438 45, 438 48, 438 53, 438199, 257414, 257415

Abstract:

A capacitive pressure sensor ( ) utilizes a diaphragm ( ) that is formed along with forming gates ( ) of active devices on the same semiconductor substrate ( ).

US Patent:

6769319, Aug 3, 2004

Filed:

Jul 9, 2001

Appl. No.:

09/901366

Inventors:

William G. McDonald - Scottsdale AZ
David J. Monk - Mesa AZ
Slobodan Petrovic - Scottsdale AZ

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

G01D 1124

US Classification:

738661, 73431

Abstract:

A component includes a housing ( ) at least partially defining a cavity ( ), a sensor element ( ) located in the cavity, and a support member ( ) located over the cavity, located over at least a portion of the housing, and having a hole ( ) over the cavity. The component also includes a filter ( ) located over the support member and located over the hole in the support member.

US Patent:

6913941, Jul 5, 2005

Filed:

Sep 9, 2002

Appl. No.:

10/238062

Inventors:

Gary J. O'Brien - Gilbert AZ, US
David J. Monk - Mesa AZ, US

Assignee:

Freescale Semiconductor, Inc. - Schaumburg IL

International Classification:

H01L021/00

US Classification:

438 48, 438 50, 438 52

Abstract:

A method for creating a MEMS structure is provided. In accordance with the method, a substrate () is provided having a sacrificial layer () disposed thereon and having a layer of silicon () disposed over the sacrificial layer. A first trench () is created which extends through the silica layer and the sacrificial layer and which separates the sacrificial layer into a first region () enclosed by the first trench and a second region () exterior to the first trench. A first material () is deposited into the first trench such that the first material fills the first trench to a depth at least equal to the thickness of the sacrificial layer. A second trench () is created exterior to the first trench which extends through at least the silicon layer and exposes at least a portion of the second region of the sacrificial layer. The second region of the sacrificial layer is contacted, by way of the second trench, with a chemical etching solution adapted to etch the sacrificial layer, said etching solution being selective to the first material.

US Patent:

7052939, May 30, 2006

Filed:

Nov 26, 2002

Appl. No.:

10/304493

Inventors:

Wen Ling M. Huang - Scottsdale AZ, US
Sushil Bharatan - Gilbert AZ, US
Carl Kyono - Tempe AZ, US
David J. Monk - Gilbert AZ, US
Pamela J. Welch - Mesa AZ, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

H01L 29/76

US Classification:

438146, 438197, 438220, 438221

Abstract:

A structure that reduces signal cross-talk through the semiconductor substrate for System-On-Chip (SOC) () applications, thereby facilitating the integration of digital circuit blocks () and analog circuit blocks () onto a single IC. Cross-circuit interaction through a substrate () is reduced by strategically positioning the various digital circuit blocks () and analog circuit blocks () in an isolated wells (), (), () and () over a resistive substrate (). These well structures (), (), (), and () are then surrounded with a patterned low resistivity layer () and optional trench region (). The patterned low resistivity region () is formed below wells () and () and functions as a low resistance AC ground plane. This low resistivity region () collects noise signals that propagate between digital circuit blocks () and analog circuit blocks ().

US Patent:

7437951, Oct 21, 2008

Filed:

Aug 21, 2007

Appl. No.:

11/842776

Inventors:

William G. McDonald - Scottsdale AZ, US
David J. Monk - Mesa AZ, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

G01F 1/44
G01F 1/37

US Classification:

7386163, 7386152

Abstract:

A flowmeter is provided that comprises a leadframe assembly () and a body () disposed at least partially around the leadframe assembly (). The body () has a flow passage therethrough that comprises a first channel () having a first port (), a second channel () having a second port (), and a flow altering element () disposed within the second channel (). First and second pressure sensors ( and ) are disposed within the body () and coupled to the leadframe assembly () for measuring a first pressure within the first channel () and a second pressure within the second channel (), respectively. An integrated circuit (), which is coupled to the leadframe assembly (), to the first pressure sensor (), and to the second pressure sensor (), is configured to determine the rate of flow through the flow passage from the first pressure and the second pressure.