David A Mosley

US Patent:

6953540, Oct 11, 2005

Filed:

Sep 12, 2001

Appl. No.:

09/951049

Inventors:

Joshua Anthony Chong - Lansdale PA, US
Vincent John Farozic - Blue Bell PA, US
Richard Martin Jacobson - Chalfont PA, US
Bret Alan Snyder - Wilmington DE, US
Randall Wayne Stephens - Perkasie PA, US
David Wayne Mosley - Arlington MA, US

Assignee:

Rohm and Haas Company - Philadelphia PA

International Classification:

B01J013/02

US Classification:

264 43, 264 41, 264 433, 264 44, 528367, 528369, 528392, 528397, 528422, 528499, 528502, 528503

Abstract:

The present invention relates to a continuous method to prepare encapsulated cyclopropenes, a method to purify cyclopropene gas, and a method to prepare an α-cyclodextrin/cyclopropene complex.

US Patent:

8029904, Oct 4, 2011

Filed:

Nov 8, 2007

Appl. No.:

11/983253

Inventors:

David Wayne Mosley - Philadelphia PA, US
Garo Khanarian - Princeton NJ, US

Assignee:

Rohm and Haas Company - Philadelphia PA

International Classification:

C08G 77/20
C08K 3/10
B05D 5/12
B32B 27/00

US Classification:

428447, 427 77, 528 15, 528 32

Abstract:

A curable aryl (thio)ether aryl silicon composition is disclosed. A cured aryl (thio)ether aryl polysiloxane composition is further disclosed, along with a method of making that cured aryl (thio)ether aryl polysiloxane composition from the curable aryl (thio)ether aryl silicon composition. An encapsulated semiconductor device, and a method of making that encapsulated semiconductor device by coating a semiconductor element of a semiconductor device with cured aryl (thio)ether aryl polysiloxane are further disclosed.

US Patent:

8277894, Oct 2, 2012

Filed:

Jul 16, 2009

Appl. No.:

12/504062

Inventors:

David Mosley - Philadelphia PA, US
Kevin Calzia - Philadelphia PA, US

Assignee:

Rohm and Haas Electronic Materials LLC - Marlborough MA

International Classification:

B05D 5/00
C09D 11/00
H01L 21/336

US Classification:

427256, 106 105, 106 3113, 106 3192, 252500, 257 42, 257E21068, 257E21114, 257E2109, 257E29296, 427 76, 427380, 427384, 438 95, 438102, 438197, 438285, 438478, 438590, 438602

Abstract:

A selenium ink comprising selenium stably dispersed in a liquid medium is provided, wherein the selenium ink is hydrazine free and hydrazinium free. Also provided are methods of preparing the selenium ink and of using the selenium ink to deposit selenium on a substrate for use in the manufacture of a variety of chalcogenide containing semiconductor materials, such as, thin film transistors (TFTs), light emitting diodes (LEDs); and photo responsive devices (e. g. , electrophotography (e. g. , laser printers and copiers), rectifiers, photographic exposure meters and photo voltaic cells) and chalcogenide containing phase change memory materials.

US Patent:

8282995, Oct 9, 2012

Filed:

Sep 30, 2010

Appl. No.:

12/895297

Inventors:

Kevin Calzia - Philadelphia PA, US
David Mosley - Philadelphia PA, US
David L. Thorsen - Pitman NJ, US

Assignee:

Rohm and Haas Electronic Materials LLC - Marlborough MA

International Classification:

B05D 3/02
C09D 11/00

US Classification:

427380, 106 105, 106 3113, 106 3192, 252500, 257 42, 257E21068, 257E2109, 257E21114, 257E29296, 427384, 438 95, 438102, 438197, 438285, 438478, 438590, 438602

Abstract:

A selenium/Group Ib/Group 3a ink is provided, comprising, as initial components: (a) a selenium/Group Ib/Group 3a system which comprises a combination of, as initial components: a selenium; an organic chalcogenide component; a Group Ib containing substance; optionally, a bidentate thiol component; a Group 3a containing substance; and, (b) a liquid carrier component; wherein the selenium/Group Ib/Group 3a system is stably dispersed in the liquid carrier component. Also provided are methods of preparing the selenium/Group Ib/Group 3a ink and for using the selenium/Group Ib/Group 3a ink to deposit a selenium/Group Ib/Group 3a material on a substrate for use in the manufacture of a variety of chalcogenide containing semiconductor materials, such as, thin film transistors (TFTs), light emitting diodes (LEDs); and photoresponsive devices (e. g. , electrophotography (e. g. , laser printers and copiers), rectifiers, photographic exposure meters and photovoltaic cells) and chalcogenide containing phase change memory materials.

US Patent:

8308973, Nov 13, 2012

Filed:

Jul 27, 2009

Appl. No.:

12/509847

Inventors:

David Mosley - Philadelphia PA, US
Kevin Calzia - Philadelphia PA, US
Charles Szmanda - Westborough MA, US

Assignee:

Rohm and Haas Electronic Materials LLC - Marlborough MA

International Classification:

H01L 21/06

US Classification:

252102

Abstract:

A selenium ink comprising a chemical compound having a formula RZ—Se—Z′R′ stably dispersed in a liquid carrier is provided, wherein the selenium ink is hydrazine free and hydrazinium free. Also provided are methods of preparing the selenium ink and of using the selenium ink to deposit selenium on a substrate for use in the manufacture of a variety of chalcogenide containing semiconductor materials, such as, thin film transistors (TFTs), light emitting diodes (LEDs); and photoresponsive devices (e. g. , electrophotography (e. g. , laser printers and copiers), rectifiers, photographic exposure meters and photovoltaic cells) and chalcogenide containing phase change memory materials.

US Patent:

8309179, Nov 13, 2012

Filed:

Sep 28, 2009

Appl. No.:

12/568206

Inventors:

Kevin Calzia - Philadelphia PA, US
David W. Mosley - Philadelphia PA, US
Charles R. Szmanda - Westborough MA, US
David L. Thorsen - Pitman NJ, US

Assignee:

Rohm and Haas Electronics Materials LLC - Marlborough MA

International Classification:

B05D 3/02
C09D 11/00

US Classification:

427380, 106 105, 106 3113, 106 3192, 252500, 257 42, 257E21068, 257E2109, 257E21114, 257E29296, 427384, 438 95, 438102, 438197, 438285, 438478, 438590, 438602

Abstract:

A selenium/Group 1b ink comprising, as initial components: a selenium component comprising selenium, an organic chalcogenide component having a formula selected from RZ—Z′R′ and R—SH, a Group 1b component and a liquid carrier; wherein Z and Z′ are each independently selected from sulfur, selenium and tellurium; wherein R is selected from H, Calkyl group, a Caryl group, a Calkylhydroxy group, an arylether group and an alkylether group; wherein R′ and Rare selected from a Calkyl group, a Caryl group, a Calkylhydroxy group, an arylether group and an alkylether group; and wherein the selenium/Group 1b ink is a stable dispersion. Also provided are methods of preparing the selenium/Group 1b ink and of using the selenium/Group 1b ink to deposit selenium and a Group 1b material on a substrate (preferably to deposit a MSematerial on a substrate for use in the manufacture of photovoltaic cells; wherein the mole ratio of M to selenium in the MSematerial deposited is tailorable; wherein M is at least one of copper and silver).

US Patent:

8343267, Jan 1, 2013

Filed:

Feb 18, 2011

Appl. No.:

13/030175

Inventors:

David Mosley - Lafayette Hill PA, US
David Thorsen - Pitman NJ, US

Assignee:

Rohm and Haas Electronic Materials LLC - Marlborough MA

International Classification:

B05D 3/02

US Classification:

106 3113, 427 74

Abstract:

A gallium formulated ink is provided. Also provided are methods of preparing the gallium formulated ink and for using the gallium formulated ink to deposit a Group 1b/gallium/(optional indium)/Group 6a material on a substrate for use in the manufacture of a variety of chalcogenide containing semiconductor materials, such as, thin film transistors (TFTs), light emitting diodes (LEDs); and photoresponsive devices (e. g. , electrophotography (e. g. , laser printers and copiers), rectifiers, photographic exposure meters and photovoltaic cells) and chalcogenide containing phase change memory materials.

US Patent:

8372485, Feb 12, 2013

Filed:

Feb 18, 2011

Appl. No.:

13/030171

Inventors:

David Mosley - Lafayette Hill PA, US
David Thorsen - Pitman NJ, US

Assignee:

Rohm and Haas Electronic Materials LLC - Marlborough MA

International Classification:

B05D 3/02
C09D 11/00

US Classification:

427380, 106 105, 106 3113, 106 3192, 252500, 252512, 257 42, 257E2109, 257E21114, 257E21411, 257E29296, 427 76, 427256, 427384, 438 95, 438102, 438197, 438285, 438478, 438483, 438502, 438590, 438603

Abstract:

A gallium ink is provided, comprising, as initial components: a gallium component comprising gallium; a stabilizing component; an additive; and, a liquid carrier; wherein the gallium ink is a stable dispersion. Also provided are methods of preparing the gallium ink and for using the gallium ink in the preparation of semiconductor films (e. g. , in the deposition of a CIGS layer for use in photovoltaic devices).