David L Nichols

US Patent:

D472126, Mar 25, 2003

Filed:

Apr 2, 2002

Appl. No.:

29/158301

Inventors:

Mark Miklosz - Western Springs IL
Guillermo Havenstein - Zorneding, DE
Robert Green - Elmhurst IL
Richard LaSota - Chicago IL
David Nichols - Island Lake IL
Jorge L. Plana - Chicago IL

Assignee:

S-B Power Tool Corporation - Chicago IL

International Classification:

0803

US Classification:

D 8107, D8 70

US Patent:

6878919, Apr 12, 2005

Filed:

Apr 28, 2004

Appl. No.:

10/833386

Inventors:

David N. Nichols - Fairport NY, US
Eric G. Stevens - Webster NY, US
Stephen L. Kosman - Rochester NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

H01L031/02

US Classification:

2502081, 2502141

Abstract:

An image sensor includes a substrate having photosensitive areas; an insulator spanning the substrate; and a first and second layer of a multi-layer metallization structure, wherein the first layer forms light shield regions over selected portions of the photosensitive area as well forming circuit interconnections and barrier regions to prevent spiking into the substrate or gates at contacts in the non-imaging area; and the second layer spanning the interconnections and barrier regions of the first layer only over the non-imaging areas and the second layer overlays edges of the first layer.

US Patent:

6909461, Jun 21, 2005

Filed:

Jul 13, 2000

Appl. No.:

09/615398

Inventors:

Andrew C. Gallagher - Rochester NY, US
David N. Nichols - Fairport NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

H04N003/14
H04N005/335
H04N003/12
H04N005/235

US Classification:

348294, 348332, 348362, 250214 R, 2502141, 257436, 257448

Abstract:

An image capture system generates an extended effective dynamic range from a signal provided by an image sensor by utilizing an image sensing device having standard photosites with a predetermined response to a light exposure and non-standard photosites with a slower response to the same light exposure. An optical section exposes the image sensing device to image light, thereby causing the image sensing device to generate an image signal and a processing section expands the response of the standard photosites to increased light exposures by utilizing the image signals from neighboring non-standard photosites. Furthermore, the processing section may expand the response of the non-standard photosites to decreased light exposures by utilizing the image signals from neighboring standard photosites. The differential response of the image sensor is provided by a structural element, such as an array of lenslets, a mask or a neutral density filter, overlying the photosites and providing the standard photosites with a predetermined standard response to a light exposure and the non-standard photosites with a slower response to the same light exposure.

US Patent:

7102185, Sep 5, 2006

Filed:

Jun 21, 2004

Appl. No.:

10/872607

Inventors:

David N. Nichols - Fairport NY, US
David L. Losee - Fairport NY, US
Christopher Parks - Rochester NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

H01L 31/062
H01L 31/113
H01L 27/14
H01L 31/00
H01L 31/0232

US Classification:

257294, 257 53, 257 54, 257 55, 257 56, 257 80, 257 81, 257 82, 257 83, 257 84, 257 85, 257113, 257114, 257115, 257116, 257117, 257118, 257184, 257185, 257186, 257187, 257188, 257189, 257222, 257225, 257226, 257242, 257290, 257291, 257292, 257293, 257431, 257432, 257735, 257462, 257E31054, 257E31078, 257E31081, 257E31082, 257E31093, 257E31096, 257E3112, 257E31121, 257E31122, 257E31115

Abstract:

An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring layer for low resistance strapping of poly crystalline silicon (polysilicon) gate electrodes for the vertical charge transfer region. Plugs provided by a separate metallization layer connect the refractory light shield to the polysilicon gate electrode. These plugs allow high temperature processing after refractory light shield patterning for improved sensor performance without degradation of the polysilicon gate electrode or the refractory lightshield layer.

US Patent:

7304673, Dec 4, 2007

Filed:

Oct 22, 2003

Appl. No.:

10/691047

Inventors:

Herbert J. Erhardt - Webster NY, US
David N. Nichols - Fairport NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

H04N 3/14
H04N 5/335
H04N 9/04
H04N 9/83

US Classification:

348275, 348245, 348246

Abstract:

An image sensor includes a plurality of photosensitive sites which convert incident light into a charge for forming a bounded array of active imaging pixels; one or more substitutional pixels sites arranged in predetermined locations and interspersed amongst the boundary of the array of active imaging pixels; wherein the substitutional pixels are of a different design from the active imaging pixels which provides data, information or function different from the active pixels for improving performance, operation, manufacture, and/or assembly of the image sensor.

US Patent:

7391001, Jun 24, 2008

Filed:

Feb 28, 2005

Appl. No.:

11/068358

Inventors:

David N. Nichols - Fairport NY, US
Eric G. Stevens - Webster NY, US
Stephen L. Kosman - Rochester NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

H01L 21/00

US Classification:

2502081, 438 57, 438 75

Abstract:

An image sensor includes a substrate having photosensitive areas; an insulator spanning the substrate; and a first and second layer of a multi-layer metallization structure, wherein the first layer forms light shield regions over selected portions of the photosensitive area as well forming circuit interconnections and barrier regions to prevent spiking into the substrate or gates at contacts in the non-imaging area; and the second layer spanning the interconnections and barrier regions of the first layer only over the non-imaging areas and the second layer overlays edges of the first layer.

US Patent:

7402787, Jul 22, 2008

Filed:

Oct 30, 2007

Appl. No.:

11/927870

Inventors:

David N. Nichols - Fairport NY, US
Eric G. Stevens - Webster NY, US
Stephen L. Kosman - Rochester NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

H01L 21/00

US Classification:

2502081, 438 57, 438 75, 438 98

Abstract:

An image sensor includes a substrate having photosensitive areas; an insulator spanning at least a portion of the substrate; and a first and second layer of a multi-layer metallization structure, wherein the first layer forms light shield regions over selected portions of the photosensitive area as well forming circuit interconnections and barrier regions to prevent spiking into the substrate or gates at contacts in the non-imaging area; and the second layer spanning the interconnections and barrier regions of the first layer only over the non-imaging areas and the second layer overlays edges of the first layer.

US Patent:

7402882, Jul 22, 2008

Filed:

Aug 23, 2004

Appl. No.:

10/924061

Inventors:

Shen Wang - Webster NY, US
William F. DesJardin - Holley NY, US
Robert P. Fabinski - Rochester NY, US
David N. Nichols - Fairport NY, US
Christopher Parks - Rochester NY, US
Eric G. Stevens - Webster NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

H01L 29/72

US Classification:

257435, 257 81, 257 99, 257223, 257225, 257230, 257294

Abstract:

A charge coupled device includes a substrate; a plurality of image pixels arranged in a two dimensional array in the substrate for capturing an electronic representation of an image and for transferring charge in a first direction; a transfer mechanism for transferring charge in a second direction from the plurality of the image pixels for further processing; an amplifier structure disposed in the substrate that receives the charge from the transfer mechanism and converts the charge into a voltage signal; a first opaque layer spanning over the amplifier for blocking near-infrared light inherently generated by an electrical field within the amplifier structure when a voltage is applied; and a second opaque layer deposited into the substrate for also blocking near-infrared light inherently generated by an electrical field within the amplifier structure when a voltage is applied.