David Ray Norton

Address:

3005 Hideaway Pt, Angleton, TX 77515

Phone:

9798494608

VIN:

1B3HB28B27D133751

Make:

DODGE

Model:

CALIBER

Year:

2007

US Patent:

6451450, Sep 17, 2002

Filed:

May 2, 2000

Appl. No.:

09/563665

Inventors:

Amit Goyal - Knoxville TN
Donald M. Kroeger - Knoxville TN
Mariappan Paranthaman - Knoxville TN
Dominic F. Lee - Knoxville TN
Roeland Feenstra - Knoxville TN
David P. Norton - Gainesville FL

Assignee:

UT-Battelle, LLC - Oak Ridge TN

International Classification:

B32B 1504

US Classification:

428629, 428469, 428697, 428699, 428702, 428680, 505775, 505779, 505812, 148512, 148525, 148537, 427 62

Abstract:

A laminate article consists of a substrate and a biaxially textured protective layer over the substrate. The substrate can be biaxially textured and also have reduced magnetism over the magnetism of Ni. The substrate can be selected from the group consisting of nickel, copper, iron, aluminum, silver and alloys containing any of the foregoing. The protective layer can be selected from the group consisting of gold, silver, platinum, palladium, and nickel and alloys containing any of the foregoing. The protective layer is also non-oxidizable under conditions employed to deposit a desired, subsequent oxide buffer layer. Layers of YBCO, CeO , YSZ, LaAlO , SrTiO , Y O , RE O , SrRuO , LaNiO and La ZrO can be deposited over the protective layer. A method of forming the laminate article is also disclosed.

US Patent:

6716795, Apr 6, 2004

Filed:

Sep 27, 1999

Appl. No.:

09/406190

Inventors:

David P. Norton - Knoxville TN
Chan Park - Knoxville TN
Amit Goyal - Knoxville TN

Assignee:

UT-Battelle, LLC - Oak Ridge TN

International Classification:

H01B 1200

US Classification:

505238, 505237, 428701, 428702, 428930

Abstract:

The invention relates to an article with an improved buffer layer architecture comprising a substrate having a metal surface, and an epitaxial buffer layer on the surface of the substrate. The epitaxial buffer layer comprises at least one of the group consisting of ZrO , HfO , and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of ZrO and/or HfO. The article can also include a superconducting layer deposited on the epitaxial buffer layer. The article can also include an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article comprises providing a substrate with a metal surface, depositing on the metal surface an epitaxial buffer layer comprising at least one material selected from the group consisting of ZrO , HfO , and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrO and HfO. The epitaxial layer depositing step occurs in a vacuum with a background pressure of no more than 1Ã10 Torr. The method can further comprise depositing a superconducting layer on the epitaxial layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

US Patent:

20020192508, Dec 19, 2002

Filed:

Jul 30, 2002

Appl. No.:

10/208229

Inventors:

David Norton - Knoxville TN, US
Chan Park - Knoxville TN, US
Amit Goyal - Knoxville TN, US

International Classification:

H01L039/00
B32B001/00
H01L039/24
B32B009/00
B32B019/00

US Classification:

428/701000, 505/238000, 505/470000

Abstract:

The invention relates to an article with an improved buffer layer architecture comprising a substrate having a metal surface, and an epitaxial buffer layer on the surface of the substrate. The epitaxial buffer layer comprises at least one of the group consisting of ZrO, HfO, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of ZrOand/or HfO. The article can also include a superconducting layer deposited on the epitaxial buffer layer. The article can also include an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article comprises providing a substrate with a metal surface, depositing on the metal surface an epitaxial buffer layer comprising at least one material selected from the group consisting of ZrO, HfO, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrOand HfO. The epitaxial layer depositing step occurs in a vacuum with a background pressure of no more than 1×10Torr. The method can further comprise depositing a superconducting layer on the epitaxial layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

US Patent:

62147129, Apr 10, 2001

Filed:

Sep 16, 1999

Appl. No.:

9/397719

Inventors:

David P. Norton - Knoxville TN

Assignee:

UT-Battelle, LLC - Oak Ridge TN

International Classification:

H01L 213205
H01L 2930
H01L 2131
C23C 1428
C30B 2952

US Classification:

438591

Abstract:

A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO. sub.

US Patent:

57390860, Apr 14, 1998

Filed:

May 22, 1996

Appl. No.:

8/651291

Inventors:

Amit Goyal - Knoxville TN
John D. Budai - Oak Ridge TN
Donald M. Kroeger - Knoxville TN
David P. Norton - Knoxville TN
Eliot D. Specht - Knoxville TN
David K. Christen - Oak Ridge TN

Assignee:

Lockheed Martin Energy Systems, Inc. - Oak Ridge TN

International Classification:

C30B 2922

US Classification:

505473

Abstract:

A biaxially textured article includes a rolled and annealed, biaxially textured substrate of a metal having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; and an epitaxial superconductor or other device epitaxially deposited thereon.

US Patent:

57413770, Apr 21, 1998

Filed:

Apr 10, 1995

Appl. No.:

8/419583

Inventors:

Amit Goyal - Knoxville TN
John D. Budai - Oak Ridge TN
Donald M. Kroeger - Knoxville TN
David P. Norton - Knoxville TN
Eliot D. Specht - Knoxville TN
David K. Christen - Oak Ridge TN

Assignee:

Martin Marietta Energy Systems, Inc. - Oak Ridge TN

International Classification:

C22F 100

US Classification:

148512

Abstract:

A biaxially textured article includes a rolled and annealed, biaxially textured substrate of a metal having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; and an epitaxial superconductor or other device epitaxially deposited thereon.

US Patent:

59585994, Sep 28, 1999

Filed:

Jan 9, 1998

Appl. No.:

9/005381

Inventors:

Amit Goyal - Knoxville TN
John D. Budai - Oak Ridge TN
Donald M. Kroeger - Knoxville TN
David P. Norton - Knoxville TN
Eliot D. Specht - Knoxville TN
David K. Christen - Oak Ridge TN

Assignee:

Lockheed Martin Energy Research Corporation - Oak Ridge TN

International Classification:

B32B 1504
H01L 3900

US Classification:

428457

Abstract:

A biaxially textured alloy article includes a rolled and annealed biaxially textured base metal substrate characterized by an x-ray diffraction phi scan peak of no more than 20. degree. FWHM; and a biaxially textured layer of an alloy or another material on a surface thereof. The article further includes at least one of an electromagnetic device or an electro-optical device epitaxially joined to the alloy.

US Patent:

58980202, Apr 27, 1999

Filed:

May 22, 1996

Appl. No.:

8/650249

Inventors:

Amit Goyal - Knoxville TN
John D. Budai - Oak Ridge TN
Donald M. Kroeger - Knoxville TN
David P. Norton - Knoxville TN
Eliot D. Specht - Knoxville TN
David K. Christen - Oak Ridge TN

International Classification:

H01L 3900
B32B 1504

US Classification:

505239

Abstract:

A biaxially textured article includes a rolled and annealed, biaxially textured substrate of a metal having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; and an epitaxial superconductor or other device epitaxially deposited thereon.